arXiv subjects

Nicolo Cartiglia

Publications and source records attributed to Nicolo Cartiglia.

4 recordsLinked to original sources

arXiv2026

Novel Strip-like Readout Geometries in Resistive AC-coupled Silicon Detectors (RSD / AC-LGAD)

Resistive Silicon Detectors (RSD/AC-LGAD) are novel silicon detectors capable of both precise spatial and temporal resolution. Such sensors will be essential for the next generation of particle colliders (EIC, FCC-ee, CEPC, FCC-hh) and would enable the possibility of a 4D tracker. RSD sensors are typically fabricated with a pixel-like geometry that provides excellent spatial resolution in the x and y directions. However, in regions further from the interaction point, high spatial resolution in one direction (strip-like geometry) is often preferred to reduce the number of readout channels. For example, strip AC-LGADs are now the default option for the US electron ion collider (EIC). The second production of RSD sensors by Fondazione Bruno Kessler includes sensors with unconventional readout pad shapes that act as a mixture between strip-like and pixel-like readout. This work presents the first characterization of these new pad designs using the Transient Current Technique (TCT). The measurements demonstrate exceptional one-dimensional spatial resolution, confirming the potential of novel strip-like RSDs for future tracking systems.

physics.ins-det↗

arXiv2025

Irradiation Studies of the Resistive AC-coupled Silicon Detector (RSD/AC-LGAD)

Resistive AC-coupled Silicon Detectors (RSDs) are silicon sensors which provide high temporal and spatial resolution. The RSD is a candidate sensor to be used in future tracking detectors with the objective of obtaining '4D' tracking, where timing information can be used along with spatial hits during track finding. 4D tracking will be an essential part of any future lepton or hadron collider and may even be feasible at the HL-LHC. For applications at hadron colliders, RSD sensors must be able to operate in high fluence environments in order to provide 4D tracking. However, the effects of radiation on RSDs have not been extensively studied. In this study, RSDs were irradiated to $1.0$, $2.0$, and $3.5 \times 10^{15}$~cm$^{-2}$ (1~MeV neutron equivalents) with both protons and neutrons. The sensors were then characterized electrically to study the acceptor removal and, for the first time in this doping concentration range, the donor removal. Then, the Transient Current Technique was used to begin investigating the signal charge sharing after irradiation. The results suggest an interesting trend between acceptor and donor removal, which is worthy of further study and could assist in improving radiation hardness of Low Gain Avalanche Diodes (LGADs).

physics.ins-det↗

arXiv2022

Optimization of the Gain Layer Design of Ultra-Fast Silicon Detectors

In the past few years, the need of measuring accurately the spatial and temporal coordinates of the particles generated in high-energy physics experiments has spurred a strong R\&D in the field of silicon sensors. Within these research activities, the so-called Ultra-Fast Silicon Detectors (UFSDs), silicon sensors optimized for timing based on the Low-Gain Avalanche Diode (LGAD) design, have been proposed and adopted by the CMS and ATLAS collaborations for their respective timing layers. The defining feature of the Ultra-Fast Silicon Detectors (UFSDs) is the internal multiplication mechanism, determined by the gain layer design. In this paper, the performances of several types of gain layers, measured with a telescope instrumented with a $^{90}$Sr $β$-source, are reported and compared. The measured sensors are produced by Fondazione Bruno Kessler (FBK) and Hamamatsu Photonics (HPK). The sensor yielding the best performance, both when new and irradiated, is an FBK 45\mum-thick sensor with a carbonated deep gain implant, where the carbon and the boron implants are annealed concurrently with a low thermal load. This sensor is able to achieve a time resolution of 40~ps up to a radiation fluence of~\fluence{2.5}{15}, delivering at least 5~fC of charge.

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arXiv2017

Test of Ultra Fast Silicon Detectors for Picosecond Time Measurements with a New Multipurpose Read-Out Board

Ultra Fast Silicon Detectors (UFSD) are sensors optimized for timing measurements employing a thin multiplication layer to increase the output signal. A multipurpose read-out board hosting a low-cost, low-power fast amplifier was designed at the University of Kansas and tested at the European Organization for Nuclear Research (CERN) using a 180 GeV pion beam. The amplifier has been designed to read out a wide range of detectors and it was optimized in this test for the UFSD output signal. In this paper we report the results of the experimental tests using 50 $\rm{μm}$ thick UFSD with a sensitive area of 1.4 $\rm{mm^2}$. A timing precision below 30 ps was achieved.

physics.ins-det↗