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Nikolaos Chatzaras

Publications and source records attributed to Nikolaos Chatzaras.

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20 Second Parity Lifetime in an InAs--Pb Tetron Device

A central promise of topological quantum computing is that increasing the excitation gap improves device performance significantly. Here, we experimentally validate this principle in an InAs--Pb tetron device via interferometric single-shot parity measurements. By replacing aluminum with the higher-gap superconductor lead in our superconductor-semiconductor hybrid devices, we have improved the robustness of our topological phase. In addition, to enable fast and precise bring-up at scale, we have developed an rf measurement technique that resolves low-energy wire-end states and directly measures their energy splitting with $μ\text{eV}$ precision. We employ this technique to bring up a device in a multi-tetron array and perform parity measurements of one of the tetron's hybrid nanowires (NWs). By controllably switching the wire parity, we observe $h/2e$-periodic bimodal shifts in the quantum capacitance of a quantum dot coupled to the hybrid nanowire in an interference loop. Further time-resolved measurements reveal a characteristic parity switching time of $\sim 20$ s with some instances reaching minute-scale. Such extremely long parity lifetimes are orders of magnitude longer than typical qubit operation times, which are on the order of $μ\text{s}$. Finally, we discuss potential implications for the fidelity of Pauli measurements.

cond-mat.mes-hall

Carrier Transport in Electrically-Driven Photonic Crystal Membrane Lasers

We model carrier transport in photonic crystal lasers with lateral current injection through two-dimensional (2D) finite-volume simulations. Though such lasers can achieve ultra-low threshold currents, leakage paths reduce the carrier injection efficiency. The design is evaluated through its performance in terms of injection efficiency, internal quantum efficiency, and IV characteristics. Our model predicts the presence of unconventional leakage paths, explaining experimental observations of low injection efficiencies and enhanced spontaneous recombination at doping interfaces. Carrier leakage paths arise due to insufficient injection of holes into the active region, leading to an electric field that increases the energy barrier for electrons, thereby reducing the injection efficiency. The spatial profile of the p-doped region is shown to play a critical role in achieving a high electrical injection efficiency and low-threshold lasing. The model is an important step towards modelling and optimizing properties of 2D photonic crystal membrane lasers.

physics.optics

Distinct Lifetimes for $X$ and $Z$ Loop Measurements in a Majorana Tetron Device

We present a hardware realization and measurements of a tetron qubit device in a superconductor-semiconductor heterostructure. The device architecture contains two parallel superconducting nanowires, which support four Majorana zero modes (MZMs) when tuned into the topological phase, and a trivial superconducting backbone. Two distinct readout interferometers are formed by connecting the superconducting structure to a series of quantum dots. We perform single-shot interferometric measurements of the fermion parity for the two loops, designed to implement Pauli-$X$ and $Z$ measurements of the tetron. Performing repeated single-shot measurements yields two widely separated time scales $τ_X = 14.5\pm 0.3 \, \mathrm{μs}$ and $τ_Z = 12.4\pm 0.4\, \mathrm{ms}$ for parity switches observed in the $X$ and $Z$ measurement loops, which we attribute to intra-wire parity switches and external quasiparticle poisoning, respectively. We estimate assignment errors of $\mathrm{err}^X_a=16\%$ and $\mathrm{err}^Z_a=0.5\%$ for $X$ and $Z$ measurement-based operations, respectively.

cond-mat.mes-hall