arXiv subjects

Nikolas Stavrias

Publications and source records attributed to Nikolas Stavrias.

4 recordsLinked to original sources

arXiv2025

Direct measurement of coherent nodal and antinodal dynamics in underdoped Bi-2212

The physics of strongly correlated materials is deeply rooted in electron interactions and their coupling to low-energy excitations. Unraveling the competing and cooperative nature of these interactions is crucial for connecting microscopic mechanisms to the emergence of exotic macroscopic behavior, such as high-temperature superconductivity. Here we show that polarization-resolved multidimensional coherent spectroscopy (MDCS) is able to selectively drive and measure coherent Raman excitations in different parts of the Fermi surface, where the superconducting gap vanishes or is the largest (respectively called Nodal and Antinodal region) in underdoped Bi-2212. Our evidence reveal that in the superconducting phase, the energy of Raman excitations in the nodal region is anti-correlated with the energy of electronic excitations at $\sim$1.6~eV, and both maintain coherence for over 44~fs. In contrast, excitations in the antinodal region show significantly faster decoherence ($<$18~fs) and no measurable correlations. Importantly, this long-lived coherence is specific to the superconducting phase and vanishes in the pseudogap and normal phases. This anti-correlation reveals a coherent link between the transition energy associated with the many body Cu-O bands and the energy of electronic Raman modes that map to the near-nodal superconducting gap. The different coherent dynamics of the nodal and antinodal excitations in the superconducting phase suggest that nodal fluctuations are protected from dissipation associated with scattering from antiferromagnetic fluctuations and may be relevant to sustaining the quantum coherent behaviour associated with high temperature superconductivity.

cond-mat.supr-con↗

arXiv2020

Strong Anisotropy in Liquid Water upon Librational Excitation using Terahertz Laser Fields

Tracking the excitation of water molecules in the homogeneous liquid is challenging due to the ultrafast dissipation of rotational excitation energy through the hydrogen-bonded network. Here we demonstrate strong transient anisotropy of liquid water through librational excitation using single-color pump-probe experiments at 12.3 THz. We deduce a third order response of chi^3 exceeding previously reported values in the optical range by three orders of magnitude. Using a theory that replaces the nonlinear response with a material response property amenable to molecular dynamics simulation, we show that the rotationally damped motion of water molecules in the librational band is resonantly driven at this frequency, which could explain the enhancement of the anisotropy in the liquid by the external Terahertz field. By addition of salt (MgSO4), the hydration water is instead dominated by the local electric field of the ions, resulting in reduction of water molecules that can be dynamically perturbed by THz pulses.

physics.chem-ph↗

arXiv2013

Optical addressing of an individual erbium ion in silicon

The detection of electron spins associated with single defects in solids is a critical operation for a range of quantum information and measurement applications currently under development. To date, it has only been accomplished for two centres in crystalline solids: phosphorus in silicon using electrical readout based on a single electron transistor (SET) and nitrogen-vacancy centres in diamond using optical readout. A spin readout fidelity of about 90% has been demonstrated with both electrical readout and optical readout, however, the thermal limitations of the electrical readout and the poor photon collection efficiency of the optical readout hinder achieving the high fidelity required for quantum information applications. Here we demonstrate a hybrid approach using optical excitation to change the charge state of the defect centre in a silicon-based SET, conditional on its spin state, and then detecting this change electrically. The optical frequency addressing in high spectral resolution conquers the thermal broadening limitation of the previous electrical readout and charge sensing avoids the difficulties of efficient photon collection. This is done with erbium in silicon and has the potential to enable new architectures for quantum information processing devices and to dramatically increase the range of defect centres that can be exploited. Further, the efficient electrical detection of the optical excitation of single sites in silicon is a major step in developing an interconnect between silicon and optical based quantum computing technologies.

cond-mat.mes-hall↗

arXiv2010

ESR studies of ion implanted phosphorus donors near the Si-SiO2 interface

This work reports an ESR study of low energy, low fluence phosphorus ion implantation into silicon in order to observe the activation of phosphorus donors placed in close proximity to the Si-SiO2 interface. Electrical measurements, which were used to estimate donor activation levels, reported high implant recoveries when using 14 keV phosphorus ions however, it was not possible to correlate the intensity of the hyperfine resonance signal with the electrical measurements in the presence of an SiO2 interface due to donor state ionisation (i.e. compensation effects). Comparative measurements made on silicon with an H-passivated surface reported higher donor hyperfine signal levels consistent with lower surface defect densities at the interface.

cond-mat.mtrl-sci↗