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Nima Taherinejad

Publications and source records attributed to Nima Taherinejad.

2 recordsLinked to original sources

Three factor delay learning rules for spiking neural networks

Spiking Neural Networks (SNNs) are dynamical systems that operate on spatiotemporal data, yet their learnable parameters are often limited to synaptic weights, contributing little to temporal pattern recognition. Learnable parameters that delay spike times can improve classification performance in temporal tasks, but existing methods rely on large networks and offline learning, making them unsuitable for real-time operation in resource-constrained environments. In this paper, we introduce synaptic and axonal delays to leaky integrate and fire (LIF)-based feedforward and recurrent SNNs, and propose three-factor learning rules to simultaneously learn delay parameters online. We employ a smooth Gaussian surrogate to approximate spike derivatives exclusively for the eligibility trace calculation, and together with a top-down error signal determine parameter updates. Our experiments show that incorporating delays improves accuracy by up to 20% over a weights-only baseline, and for networks with similar parameter counts, jointly learning weights and delays yields up to 14% higher accuracy. On the SHD speech recognition dataset, our method achieves similar accuracy to offline backpropagation-based approaches. Compared to state-of-the-art methods, it reduces model size by 6.6x and inference latency by 67%, with only a 2.4% drop in classification accuracy. Our findings benefit the design of power and area-constrained neuromorphic processors by enabling on-device learning and lowering memory requirements.

cs.NE

BEhavioral Leakage and IntEr-cycle Variability Emulator model for ReRAMs (BELIEVER)

Emerging electronic devices are promising to drive the performance of computer systems to new heights, against the notable saturation in traditional transistor-based architectures. Among them, resistive RAM -- or ReRAM -- has attracted a lot of attention among scientists since its practical realization was reported in 2008 and numerous devices, circuits and systems, and also models have been described in the literature. However, behavioral models fail to reproduce device parameter variations and the drift of device state in the absence of a stimulus. This shortcoming substantially reduces the practical relevance of systems and circuits designed with existing models. The work at hand deals with the development of a behavioral model that integrates device parameter variation and state drift based on data collected from our measurements of real devices. As we show in this paper, BELIEVER model enables engineers to conduct more reliable and meaningful design and simulations of circuits and systems that use ReRAMs.

cs.ET