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Nina Burmeister

Publications and source records attributed to Nina Burmeister.

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FRET between NV centers in diamond and chlorophyll molecules: a novel resource for multimodal sensing and imaging in plant cells

This work demonstrates efficient Forster resonance energy transfer (FRET) between ensembles of shallow nitrogen-vacancy (NV) centers located 7 nm and 9 nm below a single-crystal diamond surface and a naturally occurring fluorophore, namely a mixture of chlorophyll a and b molecules extracted from Arabidopsis thaliana. The broad fluorescence band of NV centers spectrally overlaps with the absorption of chlorophyll molecules, enabling FRET. As a result, depositing a chlorophyll layer on the diamond surface reduces the NV fluorescence lifetime from approximately 14 ns to below 4 ns, indicating efficient energy transfer. Laser-induced photobleaching of chlorophyll restores the unquenched NV lifetime. In contrast, NV centers located deeper within the diamond at depths of 40 nm and 72 nm remain unaffected, confirming that the observed quenching originates from a short-range FRET mechanism. The NV ensembles retain their optically detected magnetic resonance contrast while FRET is observed, demonstrating preservation of their spin properties. These proof-of-principle experiments establish the feasibility of combining FRET-based distance measurements with magnetic sensing using optically readable spins.

physics.bio-ph

Nitrogen-Vacancy Centers in Epitaxial Laterally Overgrown Diamond: Towards Up-scaling of Color Center-based Quantum Technologies

Providing high-quality, single-crystal diamond (SCD) with a large area is desirable for up-scaling quantum technology applications that rely on color centers in diamond. Growth methods aiming to increase the area of SCD are an active research area. Native color centers offer a sensitive probe for local crystal quality in such novel materials e.g., via their reaction to stress. In this work, we investigate individual native nitrogen-vacancy (NV) centers in SCD layers manufactured via laterally overgrowing hole arrays in a heteroepitaxially grown large-scale substrate. Heteroepitaxy has become a common tool for growing large SCDs; however, achieving the high crystal quality needed for quantum applications remains a challenge. In the overgrown layer, we identify NV centers with spin-decoherence times in the order of hundreds of microseconds, comparable to high-purity homoepitaxial SCD. We quantify the effective crystal strain in different regions of the overgrown layer, indicating a low stress overall and a stress reduction in the diamond layer above the holes.

cond-mat.mtrl-sci