Searcharxiv⌕ Search

arXiv subjects

Ning Mao

Publications and source records attributed to Ning Mao.

At least 37 records · Page 2Linked to original sources

From fractional Chern insulators to topological electronic crystals in moiré MoTe2: quantum geometry tuning via remote layer

The quantum geometry of Bloch wavefunctions,encoded in the Berry curvature and quantum metric, is believed to be a decisive ingredient in stabilizing fractional quantum anomalous Hall (FQAH) effect(i.e., fractional Chern insulator, FCI, at zero magnetic field), against competing symmetry-breaking phases.A direct experimental demonstration of quantum geometry-driven switching between distinct correlated topological phases, however, has been lacking. Here, we report experimental evidence of such a switch in a high-quality 3.7 twisted MoTe2 (tMoTe2) device consisting of both A-A bilayer and A-AB trilayer regions. While composite Fermi liquid CFL/FQAH phases are established in A-A tMoTe2,the A-AB region-effectively an A-A moire bilayer proximitized by a remote B layer-develops a series of topological electronic crystal (TEC, also referred to as generalized QAH crystal, QAHC) states with integer quantized Hall conductance at commensurate fractional fillings v=1/2, 2/3, and an incommensurate filling factor v=0.53.The electrostatic phase diagram is mapped out by combined transport and optical measurements, showing that these TEC states emerge within the first moir'e valence band prior to any charge transfer to the B layer. Exact diagonalization (ED) incorporating the remote-layer-induced intralayer potential demonstrates a transition from a CFL-like manifold in the A-A limit to a Chern number C=1 ground-state consistent with a TEC at v=1/2 , accompanied by the further breakdown of ideal band geometry. Our results provide experimental evidence of quantum geometry-tuned competition between FQAH/CFL and TEC phases in a moiré Chern band and pave the way for further exploring correlation-driven topological phenomena by tuning quantum geometry.

cond-mat.mes-hall↗

Strain-tunability of the multipolar Berry curvature in altermagnet MnTe

The anomalous Hall effect describes the generation of a transverse voltage by a longitudinal current even in the absence of an external magnetic field. While typically observed in ferromagnets, it has also been predicted to arise in altermagnets, materials characterized by rotational symmetries that enable broken time reversal symmetry despite compensated collinear magnetic ordering. These symmetries enforce band (anti)crossings that can generate significant contributions to the Berry curvature that drives the anomalous Hall effect. This Berry curvature is predicted to exhibit a characteristic multipolar order, resulting in a symmetry-enforced distribution at or near net compensation which is highly sensitive to perturbations that distort this balance. However, exploring the predicted multipolar Berry curvature of altermagnets and its reversible manipulation remains challenging. Here, we demonstrate evidence for the multipolar nature of the altermagnetic Berry curvature in MnTe by tuning the anomalous Hall effect via uniaxial stress. Upon straining, the magnitude of the anomalous Hall conductivity changes and, at a critical strain of 0.14%, the sign is reversed. Symmetry analysis and density functional theory calculations reveal that this tunability is a direct consequence of the altermagnetic multipolar Berry curvature. Our results provide insight into the role of crystal and magnetic symmetries in the realization of higher-order Berry curvature distributions and their unique tunability.

cond-mat.mtrl-sci↗

Anomalous Trajectory Drift and Geometric Phases of Cyclic Spinor Solitons Induced by Virtual Magnetic Monopoles

We investigate the dynamics of a two-component Bose-Einstein condensate with spin-orbit coupling numerically and analytically. Under the drive of a weak segmented rotational external field, we observe that the system exhibits cyclic soliton motion; however, in contrast to the predictions of quasi-particle theory, the trajectory of the soliton center shows a distinct drift. The underlying mechanism of this anomalous drift is revealed: the moving soliton experiences a Lorentz force induced by a virtual magnetic monopole field in momentum space. We further calculate the phase evolution of the soliton during this cyclic motion and find that its geometric component comprises both an adiabatic Berry phase and a nonadiabatic Aharonov-Anandan phase. Notably, the Berry phase can be expressed in terms of the magnetic flux of the aforementioned virtual monopole field. Our findings hold implications for geometric phase theory and experiments on two-component Bose-Einstein condensates, and may establish a novel link between quantum geometry and soliton dynamics.

cond-mat.quant-gas↗

Tunable symmetry breaking in a hexagonal-stacked moiré magnet

Symmetry plays a central role in defining magnetic phases, making tunable symmetry breaking across magnetic transitions highly desirable for discovering non-trivial magnetism. Magnetic moiré superlattices, formed by twisting two-dimensional (2D) magnetic crystals, have been theoretically proposed and experimentally explored as platforms for unconventional magnetic states. However, despite recent advances, tuning symmetry breaking in moiré magnetism remains limited, as twisted 2D magnets, such as rhombohedral (R)-stacked twisted CrI_3, largely inherit the magnetic properties and symmetries of their constituent layers. Here, in hexagonal-stacked twisted double bilayer (H-tDB) CrI_3, we demonstrate clear symmetry evolution as the twist angle increases from 180^{\circ} to 190^{\circ}. While the net magnetization remains zero across this twist angle range, the magnetic phase breaks only the three-fold rotational symmetry at 180^{\circ}, but it breaks all of the rotational, mirror, and time-reversal symmetries at intermediate twist angles between 181^{\circ} and 185^{\circ}, and all broken symmetries are recovered at 190^{\circ}. These pronounced symmetry breakings at intermediate twist angles are accompanied by metamagnetic behaviors, evidenced by symmetric double hysteresis loops around zero magnetic field. Together, these results reveal that H-tDB CrI_3 at intermediate twist angles host a distinct moiré magnetic phase, featuring periodic in-plane spin textures with broken rotational, mirror, and time-reversal symmetries, which is markedly different from the out-of-plane layered antiferromagnetism in bilayer CrI_3 and the predominantly out-of-plane moiré magnetism in R-tDB CrI_3. Our work establishes H-stacked CrI_3 moiré magnets as a versatile platform for engineering magnetic properties, including and likely beyond complex spin textures.

cond-mat.mtrl-sci↗

Quantum spin Hall effects in van der Waals materials

The quantum spin Hall (QSH) effect, first predicted in graphene by Kane and Mele in 2004, has emerged as a prototypical platform for exploring spin-orbit coupling, topology, and electronic interactions. Initially realized experimentally in quantum wells exhibiting characteristic QSH signatures, the field has since expanded with the discovery of van der Waals (vdW) materials. This review focuses on vdW systems, which offer unique advantages: their exposed surfaces enable a combination of surface-sensitive spectroscopic and microscopic tools for comprehensive detection of the QSH state; mechanical stacking with other vdW layers facilitates symmetry engineering and proximity effects; and moiré engineering introduces layer skyrmion topological phases and strong correlation effects. We highlight two monolayer families, 1T$^\prime$-MX$_2$ and MM$^\prime$X$_4$, represented by WTe$_2$ and TaIrTe$_4$, respectively. These materials exhibit QSH phases intertwined with or in close proximity to other quantum phases, such as excitonic insulators, charge density waves, and superconductivity. Their low crystal symmetry and topology enable rich quantum geometrical responses, ranging from nonlinear Hall effects to circular photogalvanic effects. We also discuss moiré systems, which combine topology with flatband physics and enhanced correlations, driving spontaneous symmetry breaking and transitions from QSH to quantum anomalous Hall (QAH) states. Remarkably, fractionalized QAH and QSH states have recently been observed in moiré systems, significantly advancing the field of condensed matter physics. Finally, we explore emerging applications of QSH and derived materials, such as using nonlinear Hall effects for quantum rectification in microwave energy harvesting and harnessing fractional anomalous states for topological quantum computing.

cond-mat.mes-hall↗

Universal giant spin Hall effect in moire metal

While moiré phenomena have been extensively studied in low-carrier-density systems such as graphene and semiconductors, their implications for metallic systems with large Fermi surfaces remain largely unexplored. Using GPU-accelerated large-scale ab-initio quantum transport simulations, we investigate spin transport in two distinct platforms: twisted bilayer MoTe$_2$ (semiconductor, from lightly to heavily doping) and NbX$_2$ ($X$ = S, Se; metals). In twisted MoTe$_2$, the spin Hall conductivity (SHC) evolves from $4\tfrac{e}{4π}$ at $5.09^\circ$ to $10\tfrac{e}{4π}$ at $1.89^\circ$, driven by the emergence of multiple isolated Chern bands. Remarkably, in heavily doped metallic regimes--without isolated Chern bands--we observe a universal amplification of the spin Hall effect from Fermi surface reconstruction under long-wavelength potential, with the peak SHC tripling from $6\tfrac{e}{4π}$ at $5.09^\circ$ to $17\tfrac{e}{4π}$ at $3.89^\circ$. For prototypical moiré metals like twisted NbX$_2$, we identify a record SHC of $-17\tfrac{e}{4π}$ (-5200 $(\hbar / e)S/cm$ in 3D units), surpassing all known bulk materials. These results establish moiré engineering as a powerful strategy for enhancing spin-dependent transport, and advancing ab-initio methodologies to bridge atomic-scale precision with device-scale predictions in transport simulations.

cond-mat.mes-hall↗

Imaging moiré flat bands and Wigner molecular crystals in twisted bilayer MoTe2

Two-dimensional semiconducting moiré materials have emerged as a highly tunable platform for exploring novel quantum phenomena. Recently, tMoTe2 has attracted significant attentions due to the observation of the long-sought fractional quantum anomalous Hall effect. However, a comprehensive microscopic understanding of the tMoTe2 moiré superlattice remains elusive. Here, we report STM/STS studies in dual-gated tMoTe2 moiré devices with twist angles ranging from 2.3 to 3.8 deg. The device consists of two independent back-gates, one enables an ohmic contact for tMoTe2, while the other fine-tunes the Fermi level of tMoTe2. This dual-gate control enables direct measurement of the electronic structure in tMoTe2 under varied displacement fields and moiré filling factors, by fine tuning the gate voltage and the tip bias. Our STS spectra and spatial imaging reveal that the low-energy moiré flat bands are predominantly localized in the XM and MX regions of the moiré superlattice. At zero E-field, these bands form a honeycomb lattice with non-trivial topology, whereas an applied E-field drives a transition into two distinct triangular lattices with trivial topology. The spatial distributions align with large-scale first-principle calculations, demonstrating that the topological flat bands arise from the K-valley hybridization between the top and bottom MoTe2 layers. Furthermore, we show that the effective moiré potential depth can be controlled via gate and tip biases. At sufficient potential depths, we observe the emergence of Wigner molecular crystals, transitioning MX triangular lattice into a Kagome lattice at MX moiré filling factor 3. These results elucidate the microscopic origin of topological flat bands in tMoTe2 and demonstrate electric-field control of topology and correlated electronic orders, paving the way to engineer exotic quantum phases in moiré simulators.

cond-mat.mes-hall↗

Transfer learning electronic structure: millielectron volt accuracy for sub-million-atom moiré semiconductor

The integration of density functional theory (DFT) with machine learning enables efficient \textit{ab initio} electronic structure calculations for ultra-large systems. In this work, we develop a transfer learning framework tailored for long-wavelength moiré systems. To balance efficiency and accuracy, we adopt a two-step transfer learning strategy: (1) the model is pre-trained on a large dataset of computationally inexpensive non-twisted structures until convergence, and (2) the network is then fine-tuned using a small set of computationally expensive twisted structures. Applying this method to twisted MoTe$_2$, the neural network model generates the resulting Hamiltonian for a 1000-atom system in 200 seconds, achieving a mean absolute error below 0.1 meV. To demonstrate $O(N)$ scalability, we model nanoribbon systems with up to 0.25 million atoms ($\sim9$ million orbitals), accurately capturing edge states consistent with predicted Chern numbers. This approach addresses the challenges of accuracy, efficiency, and scalability, offering a viable alternative to conventional DFT and enabling the exploration of electronic topology in large scale moiré systems towards simulating realistic device architectures.

cond-mat.mtrl-sci↗

Interplay between topology and correlations in the second moiré band of twisted bilayer MoTe2

Topological flat bands formed in two-dimensional lattice systems offer unique opportunity to study the fractional phases of matter in the absence of an external magnetic field. Celebrated examples include fractional quantum anomalous Hall (FQAH) effects and fractional topological insulators. Recently, FQAH effects have been experimentally realized in both the twisted bilayer MoTe2 (tMoTe2) system and the rhombohedral stacked multilayer graphene/hBN moiré systems. To date, experimental studies mainly focus on the first moiré flat band, except a very recent work that studied novel transport properties in higher moiré bands of a 2.1° tMoTe2 device. Here, we present the systematical transport study of approximately 3° tMoTe2 devices, especially for the second moiré band. At ν = -2 and -4, time-reversal-symmetric single and double quantum spin Hall states formed, consistent with the previous observation in 2.1° tMoTe2 device. On the other hand, we observed ferromagnetism in the second moiré band, and a Chern insulator state driven by out-of-plane magnetic fields at ν = -3. At ν = -2.2 to -2.7, finite temperature resistivity minimum with 1/T scaling at low temperatures, and large out-of-plane negative magnetoresistance have been observed. Applying out-of-plane electric field can induce quantum phase transitions at both integer and fractional filling factors. Our studies pave the way for realizing tunable topological states and other unexpected magnetic phases beyond the first moiré flat band based on twisted MoTe2 platform.

cond-mat.mes-hall↗

Multiple Chern bands in twisted MoTe$_2$ and possible non-Abelian states

We investigate the moiré band structures and possible even denominator fractional quantum Hall state in small angle twisted bilayer MoTe$_2$, using combined large-scale local basis density functional theory calculation and continuum model exact diagonalization. Via large-scale first principles calculations at $θ=1.89^{\circ}$, we find a sequence of $C=1$(Chern number in K valley)moiré Chern bands, in analogy to Landau levels. By constructing the continuum model with multiple Chern bands, we undertake band-projected exact diagonalization using unscreened Coulomb repulsion to identify possible non-Abelian states near twist angle $θ=1.89^{\circ}$ at the half filling of second moiré band.

cond-mat.str-el↗

Quantum Oscillations Evidence for Topological Bands in Kagome Metal ScV6Sn6

Metals with kagome lattice provide bulk materials to host both the flat-band and Dirac electronic dispersions. A new family of kagome metals is recently discovered in AV6Sn6. The Dirac electronic structures of this material need more experimental evidence to confirm. In the manuscript, we investigate this problem by resolving the quantum oscillations in both electrical transport and magnetization in ScV6Sn6. The revealed orbits are consistent with the electronic band structure models. Furthermore, the Berry phase of a dominating orbit is revealed to be around $π$, providing direct evidence for the topological band structure, which is consistent with calculations. Our results demonstrate a rich physics and shed light on the correlated topological ground state of this kagome metal.

cond-mat.str-el↗

Striped magnetization plateau and chirality-reversible anomalous Hall effect in a magnetic kagome metal

Kagome materials with magnetic frustration in two-dimensional networks are known for their exotic properties, such as the anomalous Hall effect (AHE) with non-collinear spin textures. However, the effects of one-dimensional (1D) spin chains within these networks are less understood. Here, we report a distinctive AHE in the bilayer-distorted kagome material GdTi$_3$Bi$_4$, featuring 1D Gd zigzag spin chains, a one-third magnetization plateau, and two successive metamagnetic transitions. At these metamagnetic transitions, Hall resistivity shows abrupt jumps linked to the formation of stripe domain walls, while within the plateau, the absence of detectable domain walls suggests possible presence of skyrmion phase. Reducing the sample size to a few microns reveals additional Hall resistivity spikes, indicating domain wall skew scattering contributions. Magnetic atomistic spin dynamics simulations reveal that the magnetic textures at these transitions have reverse chirality, explaining the evolution of AHE and domain walls with fields. These results underscore the potential of magnetic and crystal symmetry interplay, and magnetic field-engineered spin chirality, for controlling domain walls and tuning transverse properties, advancing spintronic applications.

cond-mat.str-el↗

Transfer learning relaxation, electronic structure and continuum model for twisted bilayer MoTe$_2$

Large-scale moiré systems are extraordinarily sensitive, with even minute atomic shifts leading to significant changes in electronic structures. Here, we investigate the lattice relaxation effect on moiré band structures in twisted bilayer MoTe$_2$ with two approaches: (a) large-scale plane-wave basis first principle calculation down to $2.88^{\circ}$, (b) transfer learning structure relaxation + local-basis first principles calculation down to $1.1^{\circ}$. We use two types of van der Waals corrections: the D2 method of Grimme and the density-dependent energy correction, and find that the density-dependent energy correction yields a continuous evolution of bandwidth with twist angles. Based on the above results. we develop a more complete continuum model with a single set of parameters for a wide range of twist angles, and perform many-body simulations at $ν=-1,-2/3, -1/3$.

cond-mat.str-el↗

Sublinear transport in Kagome metals: Interplay of Dirac cones and Van Hove singularities

Kagome metals are known to host Dirac fermions and saddle point Van Hove singularities near Fermi level. With the minimal two-pocket model (Dirac cone + Van Hove singularity), we propose a semiclassical theory to explain the experimentally observed sublinear resistivity in Ni$_3$In and other Kagome metals. We derive the full semiclassical description of kinetic phenomena using Boltzmann equation, and demonstrate that internode electron-electron interaction leads to sublinear in $T$ scaling for both electrical and thermal transport at low temperatures. At higher temperatures above the Dirac node chemical potential, thermal and electric current dissipate through distinct scattering channels, making a ground for Wiedemann-Franz law violation.

cond-mat.str-el↗

Topology-engineered orbital Hall effect in two-dimensional ferromagnets

Recent advances in manipulation of orbital angular momentum (OAM) within the paradigm of orbitronics present a promising avenue for the design of future electronic devices. In this context, the recently observed orbital Hall effect (OHE) occupies a special place. Here, focusing on both the second-order topological and quantum anomalous Hall insulators in two-dimensional ferromagnets, we demonstrate that topological phase transitions present an efficient and straightforward way to engineer the OHE, where the OAM distribution can be controlled by the nature of the band inversion. Using first-principles calculations, we identify Janus RuBrCl and three septuple layers of MnBi$_2$Te$_4$ as experimentally feasible examples of the proposed mechanism of OHE engineering by topology. With our work we open up new possibilities for innovative applications in topological spintronics and orbitronics.

cond-mat.mtrl-sci↗

One family of dark-bright solitons with striking width differences

Most of previously reported dark-bright solitons admit identical width for the two components in both theoretical and experimental studies. We report dark-bright solitons can admit strikingly different widths, and derive a family of analytical solutions for them by Lagrangian variational method. The existence regimes for these solitons become much more widespread in the space of nonlinear parameters, than the ones for the previously known dark-bright solitons with identical width. Our analysis indicates that the effective quantum wells are quite different in the two components, in sharp contrast to the ones for all previously known vector solitons. Especially, the particle number of bright soliton can be used to control the generation of dark-bright solitons with varied ratios of solitons' widths. Based on the current experimental technologies, we propose an experimental scheme for observing these novel dark-bright solitons. The results suggest that abundant vector solitons with difference widths exist in multi-components coupled systems, and would inspire experiments to observe them in nonlinear optical fibers, Bose-Einstein condensates, and other nonlinear coupled systems.

nlin.PS↗

Layer dependent topological phases and transitions in TaRhTe$_4$: From monolayer and bilayer to bulk

The recently synthesized ternary quasi-2D material TaRhTe$_4$ is a bulk Weyl semimetal with an intrinsically layered structure, which poses the question how the topology of its electronic structure depends on layers separations. Experimentally these separations may be changed for instance by intercalation of the bulk, or by exfoliation to reach monolayer or few-layer structures. Here we show that in the monolayer limit a quantum spin Hall insulator (QSHI) state emerges, employing density functional calculations as well as a minimal four-orbital tight-binding model that we develop. Even for weak spin-orbit couplings the QSHI is present, which has an interesting edge state that features Rashba-split bands with quadratic band minima. Further we find that a weak topological insulator (WTI) manifests in the bilayer system due to sizable intralayer hopping, contrary to the common lore that only weak interlayer interactions between stacked QSHIs lead to WTIs. Stacked bilayers give rise to a phase diagram as function of the interlayer separation that comprises a Weyl semimetal, WTI and normal insulator phases. These insights on the evolution of topology with dimension can be transferred to the family of layered ternary transition metal tellurides.

cond-mat.mtrl-sci↗

Quantum oscillations revealing topological band in kagome metal ScV6Sn6

Compounds with kagome lattice structure are known to exhibit Dirac cones, flat bands, and van Hove singularities, which host numerous versatile quantum phenomena. Inspired by these intriguing properties, we investigate the temperature and magnetic field dependent electrical transports along with the theoretical calculations of ScV6Sn6, a nonmagnetic charge density wave (CDW) compound. At low temperatures, the compound exhibits Shubnikov-de Haas quantum oscillations, which help to design the Fermi surface (FS) topology. This analysis reveals the existence of several small FSs in the Brillouin zone, combined with a large FS. Among them, the FS possessing Dirac band is a non-trivial and generates a non-zero Berry phase. In addition, the compound also shows the anomalous Hall-like behaviour up to the CDW with the CDW phase, ScV6Sn6 presents a unique material example of the versatile HfFe6Ge6 family and provides various promising opportunities to explore the series further.

cond-mat.mtrl-sci↗