arXiv subjects

Ning-Jing Yang

Publications and source records attributed to Ning-Jing Yang.

5 recordsLinked to original sources

arXiv2025

Spin-Selective Second-Order Topological Insulators Enabling Cornertronics in 2D Altermagnets

Recent progress in spintronics within the paradigm of altermagnets (AMs) opens new avenues for next-generation electronic device design. Here, we establish a spin-corner locking mechanism that generates second-order topological states in two-dimensional (2D) altermagnetic systems, through effective model analysis. Remarkably, the breaking of Mxy symmetry under uniaxial strain creates spin-resolved corner modes, driving the system into a corner-polarized second-order topological insulator (CPSOTI). Beyond critical strain, a topological phase transition to quantum anomalous Hall insulator occurs with quantized conductance. Through first-principles calculations, we identify two experimentally viable candidates for 2D intrinsic AM CrO and Cr$_2$Se$_2$O -- which host robust CPSOTI. Moreover, we construct the topological phase diagram of CrO and predict the existence of an altermagnetic Weyl semimetal phase. Our findings open technological avenues in altermagnetism and higher-order topology, while providing opportunities for coupling topological spintronics with cornertronics.

cond-mat.mes-hall↗

arXiv2025

Sliding Ferroelectrics Induced Hybrid-Order Topological Phase Transitions

We propose ferroelectric layer sliding as a new approach to realize and manipulate topological quantum states in two-dimensional (2D) bilayer magnetic van der Waals materials. We show that stacking monolayer ferromagnetic topological states into layer-spin-locked bilayer antiferromagnetic structures, and introducing sliding ferroelectricity leads to asynchronous topological evolution of different layers (spins) owing to existence of polarization potentials, thereby giving rise to rich layer-resolved topological phases. As a specific example, by means of a lattice model, we show that a bilayer magnetic 2D second order topological insulator (SOTI) reveals an unrecognized spin-hybrid-order topological insulator after undergoing ferroelectric sliding. Interestingly, in such phase, the spin-up (top layer) and spin-down (bottom layer) channels exhibit first-order and second-order topological properties, respectively. Moreover, other topological phases such as SOTI, quantum spin Hall insulator, quantum anomalous Hall insulator, and trivial insulator can also emerge through changes in the parameters of the system, and the relevant topological indices are also discussed. In terms of materials, based on first principles calculations, we predict material ScI2 can serve as an ideal platform to realize our proposal. Further, we predict that the anomalous Nernst effect of these several topological phases exhibits distinct differences, and therefore can be used as a signal for experimentally probing.

cond-mat.mtrl-sci↗

arXiv2024

Hybrid-Order Topological Phase And Transition in 1H Transition Metal Compounds

Inspired by recent experimental observations of hybrid topological states [Hossain et al. Nature 628, 527 (2024)], we predict hybrid-order topological insulators in 1H transition metal compounds (TMCs), where both second-order and first-order topological (FOT) states coexist near the Fermi level. Initially, 1H-TMCs exhibit a second-order topological phase due to the d orbital bandgap. Upon coupling of p and d orbitals through the crystal field effect, first-order topological characteristics emerge. This hybrid-order topological phase transition can be tuned via crystal field effects. Combined with first-principles calculations, we illustrate the phase transition with WTe2 and NbSe2. The WTe2 exhibits hybrid-order under ambient conditions, while NbSe2 transitions to hybrid-order under pressure. Additionally, the first-order topological bandgap in the HyOTI demonstrates a strong spin Hall effect. Our findings reveal a hybrid-order topological phase in two-dimensional electron materials and underscore spintronic applications.

cond-mat.mtrl-sci↗

arXiv2024

High-Order Topological Phase Diagram Revealed by Anomalous Nernst Effect in Janus ScClI Monolayer

Higher-order topological properties of two-dimensional(2D) magnetic materials have recently been proposed. In 2D ferromagnetic Janus materials, we find that ScClI is a second-order topological insulator (SOTI). By means of a multi-orbital tight-binding model, we analyze the orbital contributions of higher-order topologies. Further, we give the complete high-order topological phase diagram of ScClI, based on the external field modulation of the magneto-valley coupling and energy levels. 2D ScClI has a pronounced valley polarization, which causes different insulating phases to exhibit completely different anomalous Nernst conductance. As a result, we use the matched anomalous Nernst effect to reveal the topological phase transition process of ScClI. We utilize the characteristics of valley electronics to link higher-order topological materials with the anomalous Nernst effect, which has potential implications for high-order topological insulators and valley electronics.

cond-mat.mes-hall↗

arXiv2023

Topological Phases, Local Magnetic Moments, and Spin Polarization Triggered by C558-Line Defects in Graphene

We study the electronic properties of a novel topological defect structure for graphene interspersed with C558-line defects along the Armchair boundary. This system has the topological property of being topologically three-periodic and the type-II Dirac-fermionic character of the embedded topological phase. At the same time, we show computationally that the topological properties of the system are overly dependent on the coupling of this line defect. Using strain engineering to regulate the magnitude of hopping at the defect, the position of the energy level can be easily changed to achieve a topological phase transition. We also discuss the local magnetic moment and the ferromagnetic ground state in the context of line defects, which is the conclusion after considering additional Coulomb interactions. This leads to spin polarization of the whole system. Finally, by modulating the local magnetic moment at the position of the line defect, we achieve a tunable spin quantum conductance in a one-dimensional nanoribbon. Near the Fermi energy level, it also has the property of complete spin polarization. Consequently, spin filtering can be achieved by varying the incident energy of the electrons.

cond-mat.mes-hall↗