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Ningsheng Xu

Publications and source records attributed to Ningsheng Xu.

38 records · Page 3Linked to original sources

The roles of apex dipoles and field penetration in the physics of charged, field emitting, single-walled carbon nanotubes

A 1 $μ$m long, field emitting, (5,5) single-walled, carbon nanotube (SWCNT) closed with a fullerene cap, and a similar open nanotube with hydrogen-atom termination, have been simulated using the MNDO (Modified Neglect of Diatomic Overlap) quantum-mechanical method. Both contain about 80 000 atoms. It is found that field penetration and band-bending, and various forms of chemically and electrically induced apex dipole, play roles. Field penetration may help to explain electroluminescence associated with field emitting carbon nanotubes. Charge-density oscillations, induced by the hydrogen adsorption, are also found. Many of the effects can be related to known effects that occur with metallic or semiconductor field emitters; this helps both to explain the effects and to unify our knowledge about field electron emitters. However, it is currently unclear how best to treat correlation-and-exchange effects when defining the CNT emission barrier. A new form of definition for the field enhancement factor (FEF) is used. Predicted FEF values for these SWCNTs are significantly less than values predicted by simple classical formulae. The FEF for the closed SWCNT decreases with applied field; the FEF for the H-terminated open SWCNT is less than the FEF for the closed SWCNT, but increases with applied field. Physical explanations for this behavior are proposed. Curved Fowler-Nordheim plots are predicted. Overall, the predicted field emission performance of the H-terminated open SWCNT is slightly better than that of the closed SWCNT, essentially because a C-H dipole is formed that reduces the height of the tunnelling barrier. In general, the physics of a charged SWCNT seems more complex than hitherto realised.

cond-mat.mtrl-sci↗

Field-Induced Insulator to Semimetal Transition and Field Electron Emission of Nanorods of Semiconductors of Wide Energy Band Gaps

Significant field emission is found theoretically possible from nanorods of semiconductors of wide energy band gaps. If the nanorod has a thin surface layer containing a large number of localized states, a part of nanorod can exhibit an insulator-to-semimetal transition under high enough fields of direction parallel to its axis, so that field emission occurs at the apex of the metal like tip. The field emission property of silicon carbide nanorods is studied as an example and found to be in qualitative agreement with the experimental findings.

cond-mat.other↗