arXiv subjects

Nirmal Ghimire

Publications and source records attributed to Nirmal Ghimire.

4 recordsLinked to original sources

arXiv2026

The Origin of the Observed Raman Peaks in α-MnTe

The Raman spectrum of the room-temperature altermagnet $α$-MnTe is reported to contain unassigned peaks at 120(3) cm$^{-1}$ and 140(3) cm$^{-1}$, absent from the predicted phonon spectrum of the material. This has generated considerable debate within the altermagnet community and necessitates urgent resolution. This work establishes that these peaks, together with the 90(5) cm$^{-1}$ peak that matches a theoretically predicted mode, are all extrinsic, originating from elemental tellurium formed during air exposure of the surface. Raman spectra of MBE-grown thin films show that these peaks closely match those of elemental tellurium, emerge soon after air exposure, and are absent in AlO$_x$-capped films. X-ray photoelectron spectroscopy shows that air exposure breaks Mn--Te bonds and oxidizes Mn within a minute. Cross-sectional scanning transmission electron microscopy with energy-dispersive X-ray spectroscopy reveals that the oxidation leads to Mn out-diffusion, forming a few-nanometer-thick oxide layer above a buried, Te-enriched region, likely responsible for the anomalous Raman peaks. Additionally, no sample exhibited the 175 cm$^{-1}$ Raman peak which is commonly attributed to MnTe$_2$. The aggressive surface oxidation and associated elemental Te formation in MnTe have important implications for any surface-sensitive and optical characterization of MnTe (and other similar Te-containing materials) involving even the briefest air exposure.

cond-mat.mtrl-sci↗

arXiv2026

Conductivity scaling of the anomalous Hall effect in the altermagnetic semiconductor α-MnTe

α-MnTe is a prototypical altermagnet exhibiting a strong anomalous Hall effect (AHE), despite having a nearly vanishing magnetization. Lately, sample-to-sample variations of the amplitude of the AHE have raised concerns of a possible defect related origin, especially in thin films. Here, we study the AHE in α-MnTe films grown on SrF2 that have the crystal structure and m'm'm magnetic point group symmetry expected for bulk. By studying the scaling of the AHE with conductivity for those films and previously reported measurements in the literature, we find that sample-to-sample variations are well explained by a scaling law consistent with a hopping origin. Importantly, a comparison with other magnetic semiconductors reveals the colossal amplitude of the AHE of α-MnTe compared to its measured spontaneous magnetization from magnetometry and polarized neutron reflectivity. Our findings address the important fundamental question of the origin of the AHE of α-MnTe and further demonstrate the potential of altermagnets as promising spintronic materials.

cond-mat.str-el↗

arXiv2020

Fermi surface topology and non-trivial Berry phase in the flat-band semimetal Pd$_3$Pb

A study of the Fermi surface of the putative topological semimetal Pd$_3$Pb has been carried out using Shubnikov-de Haas (SdH) oscillations measured in fields of up to 60 T. Pd$_3$Pb has garnered attention in the community due to a peculiar Fermi surface that has been proposed theoretically by Ahn, Pickett, and Lee, [Phys. Rev. B 98, 035130 (2018)] to host a dispersion-less band along $X-Γ$ as well as multiple triply-degenerate band crossings that, under the influence of spin-orbit coupling, lead to ten four-fold degenerate Dirac points. Analysis of the SdH oscillation data verifies the calculated multi-sheet Fermi surface, revealing a $Γ$ centered spheroid that had not been resolved experimentally in prior studies. A comprehensive, angle-dependent analysis of the phase of the SdH oscillations convincingly demonstrates a non-trivial Berry phase for two bands along $Γ-R$, supporting the theoretical predictions, while simultaneously evidencing interference between extremal orbits that mimics a trivial Berry phase at intermediate angles.

cond-mat.str-el↗

arXiv2013

Optical Generation of Excitonic Valley Coherence in Monolayer WSe2

Due to degeneracies arising from crystal symmetries, it is possible for electron states at band edges ("valleys") to have additional spin-like quantum numbers. An important question is whether coherent manipulation can be performed on such valley pseudospins, analogous to that routinely implemented using true spin, in the quest for quantum technologies. Here we show for the first time that SU(2) valley coherence can indeed be generated and detected. Using monolayer semiconductor WSe2 devices, we first establish the circularly polarized optical selection rules for addressing individual valley excitons and trions. We then reveal coherence between valley excitons through the observation of linearly polarized luminescence, whose orientation always coincides with that of any linearly polarized excitation. Since excitons in a single valley emit circularly polarized photons, linear polarization can only be generated through recombination of an exciton in a coherent superposition of the two valleys. In contrast, the corresponding photoluminescence from trions is not linearly polarized, consistent with the expectation that the emitted photon polarization is entangled with valley pseudospin. The ability to address coherence, in addition to valley polarization, adds a critical dimension to the quantum manipulation of valley index necessary for coherent valleytronics.

cond-mat.mes-hall↗