arXiv subjects

Nityan L. Nair

Publications and source records attributed to Nityan L. Nair.

12 recordsLinked to original sources

arXiv2020

Magnetic electron collimation in three-dimensional semi-metals

While electrons moving perpendicular to a magnetic field are confined to cyclotron orbits, they can move freely parallel to the field. This simple fact leads to complex current flow in clean, low carrier density semi-metals, such as long-ranged current jets forming along the magnetic field when currents pass through point-like constrictions. Occurring accidentally at imperfect current injection contacts, the phenomenon of "current jetting" plagues the research of longitudinal magneto-resistance which is particularly important in topological conductors. Here we demonstrate the controlled generation of tightly focused electron beams in a new class of micro-devices machined from crystals of the Dirac semi-metal Cd3As2. The current beams can be guided by tilting a magnetic field and their range tuned by the field strength. Finite element simulations quantitatively capture the voltage induced at faraway contacts when the beams are steered towards them, supporting the picture of controlled electron jets. These experiments demonstrate the first direct control over the highly nonlocal signal propagation unique to 3D semi-metals in the current jetting regime, and may lead to novel applications akin to electron optics in free space.

cond-mat.mtrl-sci↗

arXiv2019

Observation of three-state nematicity in the triangular lattice antiferromagnet Fe$_{1/3}$ NbS$_2$

Nematic order is the breaking of rotational symmetry in the presence of translational invariance. While originally defined in the context of liquid crystals, the concept of nematic order has arisen in crystalline matter with discrete rotational symmetry, most prominently in the tetragonal Fe-based superconductors where the parent state is four-fold symmetric. In this case the nematic director takes on only two directions, and the order parameter in such "Ising-nematic" systems is a simple scalar. Here, using a novel spatially-resolved optical polarimetry technique, we show that a qualitatively distinct nematic state arises in the triangular lattice antiferromagnet Fe$_{1/3}$NbS$_2$. The crucial difference is that the nematic order on the triangular lattice is a Z$_3$, or three-state Potts-nematic order parameter. As a consequence, the anisotropy axes of response functions such as the resistivity tensor can be continuously re-oriented by external perturbations. This discovery provides insight into realizing devices that exploit analogies with nematic liquid crystals.

cond-mat.str-el↗

arXiv2019

Electrical switching in a magnetically intercalated transition metal dichalcogenide

Recent advances in tuning the correlated behavior of graphene and transition-metal dichalcogenides (TMDs) have opened a new frontier in the study of many-body physics in two dimensions and promise exciting possibilities for new quantum technologies. An emerging field where these materials have yet to make a deep impact is the study of antiferromagnetic (AFM) spintronics - a relatively new research direction that promises technologies that are insensitive to external magnetic fields, fast switching times, and reduced crosstalk. In this study we present measurements on the intercalated TMD Fe1/3NbS2 which exhibits antiferromagnetic ordering below 42K. We find that current densities on the order of 10^4 A/cm^2 can reorient the magnetic order, the response of which can be detected in the sample's resistance. This demonstrates that Fe1/3NbS2 can be used as an antiferromagnetic switch with electronic "write-in" and "read-out". This switching is found to be stable over time and remarkably robust to external magnetic fields. Fe1/3NbS2 is a rare example of an AFM system that exhibits fully electronic switching behavior in single crystal form, making it appealing for low-power, low-temperature memory storage applications. Moreover, Fe1/3NbS2 is part of a much larger family of magnetically intercalated TMDs, some of which may exhibit the switching behavior at higher temperatures and form a platform from which to build tunable AFM spintronic devices.

cond-mat.str-el↗

arXiv2018

Giant intrinsic photoresponse in pristine graphene

When the Fermi level matches the Dirac point in graphene, the reduced charge screening can dramatically enhance electron-electron (e-e) scattering to produce a strongly interacting Dirac liquid. While the dominance of e-e scattering already leads to novel behaviors, such as electron hydrodynamic flow, further exotic phenomena have been predicted to arise specifically from the unique kinematics of e-e scattering in massless Dirac systems. Here, we use optoelectronic probes, which are highly sensitive to the kinematics of electron scattering, to uncover a giant intrinsic photocurrent response in pristine graphene. This photocurrent emerges exclusively at the charge neutrality point and vanishes abruptly at non-zero charge densities. Moreover, it is observed at places with broken reflection symmetry, and it is selectively enhanced at free graphene edges with sharp bends. Our findings reveal that the photocurrent relaxation is strongly suppressed by a drastic change of fast photocarrier kinematics in graphene when its Fermi level matches the Dirac point. The emergence of robust photocurrents in neutral Dirac materials promises new energy-harvesting functionalities and highlights intriguing electron dynamics in the optoelectronic response of Dirac fluids.

cond-mat.mes-hall↗

arXiv2018

Transport signatures of surface states in a Weyl semimetal: evidence of field driven Fermi arc interferometry

A signature property of Weyl semimetals is the existence of topologically protected surface states - arcs in momentum space that connect Weyl points in the bulk. However, the presence of bulks states makes detection of surface contributions to the transport challenging. Here we present a magnetoresistance study of high-quality samples of the prototypical Weyl semimetal, TaAs. By measuring the Shubnikov de Haas effect, we reveal the presence of a two-dimensional cyclotron orbit. This orbit is quantitatively consistent with the interference of coherent quasiparticles traversing two distinct Fermi arcs on the [001] crystallographic surface. The observation of this effect suggests that high magnetic fields can be used to study not only the transport properties of Fermi arcs, but also the interference of their quantum mechanical wavefunctions.

cond-mat.mes-hall↗

arXiv2018

Dirac fermions in the heavy-fermion superconductors Ce(Co,Rh,Ir)In$_5$

The Ce(Co,Rh,Ir)In$_5$ family of ``Ce-115'' materials hosts an abundance of correlated electron behavior, including heavy-fermion physics, magnetism, superconductivity and nematicity. The complicated behavior of these entangled phenomena leads to a variety of exotic physical properties, which, despite the seemingly simple crystal structure of these compounds, remain poorly understood. It is generally accepted that the interplay between the itinerant and local character of Ce-$4f$ electrons is the key to their exotic behavior. Here, we report theoretical evidence that the Ce-115 materials are also topological semi-metals, with Dirac fermions around well-separated nodes. Dirac nodes in each compound are present on the $Γ-Z$ plane close to the Fermi level. As the Dirac bands are derived from In-orbitals, they occur in all family members irrespective of the transition metal (Co,Rh,Ir). We present the expected Fermi-arc surface state patterns and show the close proximity of a topological Lifshitz transition, which possibly explains the high field physics of Ce-115 materials. Experimentally, we highlight the surprising similarity of Ce(Co,Rh,Ir)In$_5$ in high magnetic fields, despite the distinctly different states of the Ce-$4f$ electrons. These results raise questions about the role Dirac fermions play in exotic transport behavior, and we propose this class of materials as a prime candidate for unconventional topological superconductivity.

cond-mat.str-el↗

arXiv2017

Thermodynamic signatures for the existence of Dirac electrons in ZrTe5

We combine transport, magnetization, and torque magnetometry measurements to investigate the electronic structure of ZrTe5 and its evolution with temperature. At fields beyond the quantum limit, we observe a magnetization reversal from paramagnetic to diamagnetic response, which is characteristic of a Dirac semi-metal. We also observe a strong non-linearity in the magnetization that suggests the presence of additional low-lying carriers from other low-energy bands. Finally, we observe a striking sensitivity of the magnetic reversal to temperature that is not readily explained by simple band-structure models, but may be connected to a temperature dependent Lifshitz transition proposed to exist in this material.

cond-mat.mes-hall↗

arXiv2016

Transport evidence for Fermi-arc mediated chirality transfer in the Dirac semimetal Cd$_3$As$_2$

Dirac semi-metals show a linear electronic dispersion in three dimension described by two copies of the Weyl equation, a theoretical description of massless relativistic fermions. At the surface of a crystal, the breakdown of fermion chirality is expected to produce topological surface states without any counterparts in high-energy physics nor conventional condensed matter systems, the so-called "Fermi Arcs". Here we present Shubnikov-de Haas oscillations involving the Fermi Arc states in Focused Ion Beam prepared microstructures of Cd$_3$As$_2$. Their unusual magnetic field periodicity and dependence on sample thickness can be well explained by recent theoretical work predicting novel quantum paths weaving the Fermi Arcs together with chiral bulk states, forming "Weyl orbits". In contrast to conventional cyclotron orbits, these are governed by the chiral bulk dynamics rather than the common momentum transfer due to the Lorentz force. Our observations provide evidence for direct access to the topological properties of charge in a transport experiment, a first step towards their potential application.

cond-mat.mes-hall↗

arXiv2016

Tuning ultrafast electron thermalization pathways in a van der Waals heterostructure

Ultrafast electron thermalization - the process leading to Auger recombination, carrier multiplication via impact ionization and hot carrier luminescence - occurs when optically excited electrons in a material undergo rapid electron-electron scattering to redistribute excess energy and reach electronic thermal equilibrium. Due to extremely short time and length scales, the measurement and manipulation of electron thermalization in nanoscale devices remains challenging even with the most advanced ultrafast laser techniques. Here, we overcome this challenge by leveraging the atomic thinness of two-dimensional van der Waals (vdW) materials in order to introduce a highly tunable electron transfer pathway that directly competes with electron thermalization. We realize this scheme in a graphene-boron nitride-graphene (G-BN-G) vdW heterostructure, through which optically excited carriers are transported from one graphene layer to the other. By applying an interlayer bias voltage or varying the excitation photon energy, interlayer carrier transport can be controlled to occur faster or slower than the intralayer scattering events, thus effectively tuning the electron thermalization pathways in graphene. Our findings, which demonstrate a novel means to probe and directly modulate electron energy transport in nanoscale materials, represent an important step toward designing and implementing novel optoelectronic and energy-harvesting devices with tailored microscopic properties.

cond-mat.mes-hall↗

arXiv2015

Quantum oscillations suggest hidden quantum phase transition in the cuprate superconductor Pr$_{2}$CuO$_{4\pmδ}$

For both electron- and hole-doped cuprates, superconductivity appears in the vicinity of suppressed broken symmetry order, suggesting that quantum criticality plays a vital role in the physics of these systems. A confounding factor in identifying the role of quantum criticality in the electron-doped systems is the competing influence of chemical doping and oxygen stoichiometry. Using high quality thin films of Pr$_{2}$CuO$_{4\pmδ}$, we tune superconductivity and uncover the influence of quantum criticality without Ce substitution. We observe magnetic quantum oscillations that are consistent with the presence of small hole-like Fermi surface pockets, and a large mass enhancement near the suppression of superconductivity. Tuning these materials using only oxygen stoichiometry allows the observation of quantum oscillations and provides a new axis with which to explore the physics underlying the electron-doped side of the cuprate phase diagram.

cond-mat.supr-con↗

arXiv2014

Competing Channels for Hot Electron Cooling in Graphene

We report on temperature dependent photocurrent measurements of high-quality dual-gated monolayer graphene (MLG) p-n junction devices. A photothermoelectric (PTE) effect governs the photocurrent response in our devices, allowing us to track the hot electron temperature and probe hot electron cooling channels over a wide temperature range (4 K to 300 K). At high temperatures ($T > T^*$), we found that both the peak photocurrent and the hot spot size decreased with temperature, while at low temperatures ($T < T^*$), we found the opposite, namely that the peak photocurrent and the hot spot size increased with temperature. This non-monotonic temperature dependence can be understood as resulting from the competition between two hot electron cooling pathways: (a) (intrinsic) momentum-conserving normal collisions (NC) that dominates at low temperatures and (b) (extrinsic) disorder-assisted supercollisions (SC) that dominates at high temperatures. Gate control in our high quality samples allows us to resolve the two processes in the same device for the first time. The peak temperature $T^*$ depends on carrier density and disorder concentration, thus allowing for an unprecedented way of controlling graphene's photoresponse.

cond-mat.mes-hall↗

arXiv2011

Hot Carrier-Assisted Intrinsic Photoresponse in Graphene

Graphene is a new material showing high promise in optoelectronics, photonics, and energy-harvesting applications. However, the underlying physical mechanism of optoelectronic response has not been established. Here, we report on the intrinsic optoelectronic response of high-quality dual-gated monolayer and bilayer graphene p-n junction devices. Local laser excitation at the p-n interface leads to striking six-fold photovoltage patterns as a function of bottom- and top-gate voltages. These patterns, together with the measured spatial and density dependence of the photoresponse, provide strong evidence that non-local hot-carrier transport, rather than the photovoltaic effect, dominates the intrinsic photoresponse in graphene. This novel regime, which features a long-lived and spatially distributed hot carrier population, may open the doorway for optoelectronic technologies exploiting efficient energy transport at the nanoscale.

cond-mat.mes-hall↗