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Noa Varela-Dominguez

Publications and source records attributed to Noa Varela-Dominguez.

2 recordsLinked to original sources

Depth-Resolved Evolution of Buried Polar Topologies in a PbTiO3/SrTiO3 Superlattice

Polar topologies in complex oxides gives rise to a rich spectrum of emergent functionalities and are fundamentally governed by three-dimensional (3D) atomic structures. However, direct experimental determination of buried 3D polar configurations remains a longstanding challenge because conventional (scanning) transmission electron microscopy ((S)TEM) provides primarily projected structural information with limited depth sensitivity. Here, we combine depth-sectioning low-angle annular dark-field (LAADF) STEM, high-angle ADF (HAADF) STEM, and multislice electron ptychography (MEP) to directly visualize the depth-dependent atomic structure and polarization topology in a PTO/STO superlattice. Depth-sectioning STEM reveals pronounced focal-depth-dependent contrast variations and apparent splitting of Pb atomic columns, indicating significant structural heterogeneity along the beam direction. MEP reconstruction simultaneously resolves the Pb, Ti, and O sublattices with nanometer-scale depth resolution, enabling quantitative mapping of atomic displacements throughout the reconstructed volume. The resulting 3D atomic model reveals substantial depth-dependent displacements of Pb, Ti, and O atoms and a corresponding evolution of the polarization topology. Vortex-like polarization structures are observed near the specimen surfaces but become strongly suppressed within the interior, where distinct polarization configurations emerge. These findings show that polarization patterns observed in conventional projection images can arise from the superposition of multiple depth-dependent polar states and may obscure the underlying 3D polarization texture. Our findings establish a direct experimental link between local atomic displacements and depth-dependent polarization topology, opening new opportunities for investigating and engineering buried functional states in complex oxide nanostructures.

cond-mat.mtrl-sci↗

The coupling of polarization and oxygen vacancy migration in ferroelectric Hf0.5Zr0.5O2 thin films enables electrically controlled thermal memories above room temperature

Here we investigate epitaxial Hf0.5Zr0.5O2 ferroelectric thin films as potential candidates to be used as non-volatile electric-field-modulated thermal memories. The electric-field dependence of the thermal conductivity of metal/Hf0.5Zr0.5O2/YSZ devices is found to be hysteretic, resembling the polarization vs electric field hysteresis loops, being maximum (minimum) at large applied positive (negative) voltages from the top metallic electrode. This dynamic thermal response is compatible with the coupling between the ferroelectric polarization and the oxygen ion migration, in which the oxygen vacancies are the main phonon scattering sources and the polarization acts as an electrically active ion migration barrier that creates the hysteresis. This new mechanism enables two non-volatile thermal states: high (ON) and low (OFF) thermal conductivity, with an ON/OFF ratio of 1.6. Both the ON and OFF states exhibit high stability over time, though the switching speed is limited by ion mobility in the YSZ electrode.

cond-mat.mtrl-sci↗