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Noah L. Samuelson

Publications and source records attributed to Noah L. Samuelson.

4 recordsLinked to original sources

Slow quasiparticle dynamics and anyonic statistics in a fractional quantum Hall Fabry-P\'erot interferometer

Anyons are particles with fractional exchange statistics that emerge as elementary excitations of fractional quantum Hall phases. Experimentally, their exchange statistics can be measured in the edge-state Fabry-P\'erot interferometer. In these devices, the presence of $N_{qp}$ localized anyons in the bulk contributes a phase $N_{qp}\theta_a$ to the interference signal. Here we report the observation of large, hysteretic phase jumps in a monolayer graphene Fabry-P\'erot interferometer at $\nu=1/3$. When the filling factor is increased from $\nu<1/3$ towards the center of the plateau, we observe phase slips with magnitude $\Delta \theta \approx 2\pi/3$, consistent with the addition of individual quasiparticles to the interferometer bulk. In contrast to prior work, however, the phase slips occur as instantaneous jumps in the interference signal, indicative of quasiparticle equilibration times exceeding 20 minutes. We use this long timescale to investigate the effect of changes in interferometer area $A_I$ and $N_{QP}$ independently at fixed magnetic field, revealing a striking memory effect in the phase slip magnitude. In particular, as the $\nu=1/3$ plateau is approached from higher filling, we observed phase slips with $\Delta \theta$ significantly larger than $2\pi/3$ over the same range of gate voltage where quantized jumps are seen for increasing $\nu$. We discuss this asymmetry in terms of bulk-edge coupling of quasiparticles localized near the edge or in the bulk, and argue that this effect can be qualitatively reconciled with theoretical expectations for strongly interacting quasiparticles in the presence of weak disorder and strongly nonequilibrium charge dynamics. Our results highlight the key role played by charge dynamics on signatures of the anyon phase, and demonstrate that fractional quasiparticles can be indefinitely localized in nonequilibrium configurations.

cond-mat.mes-hall

Spontaneous localization at a potential saddle point from edge state reconstruction in a quantum Hall point contact

Quantum point contacts (QPCs) are an essential component in mesoscopic devices. Here, we study the transmission of quantum Hall edge modes through a gate-defined QPC in monolayer graphene. We observe resonant tunneling peaks and a nonlinear conductance pattern characteristic of Coulomb-blockaded localized states. The in-plane electric polarizability reveals the states are localized at a classically-unstable electrostatic saddle point. We explain this unexpected finding within a self-consistent Thomas-Fermi model, finding that localization of a zero-dimensional state at the saddle point is favored whenever the applied confinement potential is sufficiently soft compared to the Coulomb energy. Our results provide a direct demonstration of Coulomb-driven reconstruction at the boundary of a quantum Hall system.

cond-mat.mes-hall

Universal chiral Luttinger liquid behavior in a graphene fractional quantum Hall point contact

One dimensional conductors are described by Luttinger liquid theory, which predicts a power-law suppression of the density of states near the Fermi level. The scaling exponent is non-universal in the general case, but is predicted to be quantized for the chiral edge states of the fractional quantum Hall effect. Here, we report conductance measurements across a point contact linking integer and fractional quantum Hall edge states. At weak coupling, we observe the predicted universal quadratic scaling with temperature and voltage. At strong coupling, the conductance saturates to e^2/2h, arising from perfect Andreev reflection of fractionalized quasi-particles at the point contact. We use the strong coupling physics to realize a nearly dissipationless DC voltage step-up transformer, whose gain of 3/2 arises directly from topological fractionalization of electrical charge.

cond-mat.mes-hall

Nanoscale electrostatic control in ultra clean van der Waals heterostructures by local anodic oxidation of graphite gates

In an all-van der Waals heterostructure, the active layer, gate dielectrics and gate electrodes are assembled from two-dimensional crystals that have a low density of atomic defects. This design allows two-dimensional electron systems with very low disorder to be created, particularly in heterostructures where the active layer also has intrinsically low disorder, such as crystalline graphene layers or metal dichalcogenide heterobilayers. A key missing ingredient has been nanoscale electrostatic control, with existing methods for fabricated local gates typically introducing unwanted contamination. Here we describe a resist-free local anodic oxidation process for patterning sub 100nm features in graphite gates, and their subsequent integration into an all-van der Waals heterostructure. We define a quantum point contact in the fractional quantum Hall regime as a benchmark device and observe signatures of chiral Luttinger liquid behaviour, indicating an absence of extrinsic scattering centres in the vicinity of the point contact. In the integer quantum Hall regime, we demonstrate in situ control of the edge confinement potential, a key requirement for the precision control of chiral edge states. This technique may enable the fabrication of devices capable of single anyon control and coherent edge-state interferometry in the fractional quantum Hall regime.

cond-mat.mes-hall