arXiv subjects

Noam Ophir

Publications and source records attributed to Noam Ophir.

5 recordsLinked to original sources

arXiv2026

Trion gas on the surface of a failed excitonic insulator

Trions, three-body bound states composed of an exciton and an additional charge, are typically fragile and require external excitation to form. Here, we report the spontaneous emergence of a stable trion gas at the surface of the layered semiconductor Ta2NiS5, revealed through angle-resolved photoemission spectroscopy. We observe a sharp, highly localized in-gap feature that cannot be explained by conventional band-theory. Instead, we argue that it arises from the formation of negative trions, stabilized by surface-induced band bending and the material's quasi-one-dimensional geometry. Unlike excitons, these trions form without optical pumping and persist at equilibrium, marking a rare example of an interaction-driven surface state in a nominally conventional semiconductor. Our findings establish Ta2NiS5 as a unique platform for exploring many-body physics at surfaces and open new avenues for studying and controlling collective excitations in low-dimensional systems.

cond-mat.str-el↗

arXiv2026

Trion liquid and its photoemission signatures

We study the formation of a trion liquid in doped low-dimensional semiconductors with strong electron-hole interactions and analyze its signatures in angle-resolved photoemission spectroscopy (ARPES). We show that this strongly correlated state of matter forms naturally in the vicinity of the phase boundary between a normal band insulator and an excitonic insulator upon doping. By studying the photoemission spectrum, we show that a partially occupied trion band gives rise to an in-gap feature in the ARPES spectrum with vanishing spectral weight at the Fermi energy. We demonstrate our findings using a 1D microscopic model employing exact, unbiased, matrix product state (MPS)-based calculations.

cond-mat.str-el↗

arXiv2025

Light-induced trion-exciton competition revealed by ultrafast photoemission

Strong Coulomb interactions in low-dimensional quantum materials give rise to emergent bound states such as excitons and trions. Trions are conventionally secondary excitations, requiring both optical excitation and charge doping. In quasi-one-dimensional Ta$_2$NiS$_5$, however, an exceptionally large binding energy exceeding the single-particle band gap stabilizes an equilibrium trion gas under surface doping alone. Here, using time- and angle-resolved photoemission spectroscopy, we show that trions can also be generated purely optically, without external charge. Following photoexcitation of pristine Ta$_2$NiS$_5$ we observe a bright, momentum-localized, in-gap feature with a slow, fluence-dependent relaxation. Rate-equation modeling identifies it as a mixed population of trions and excitons, with the trions formed via an unconventional single-particle pathway that requires no photoexcited hole. The trion-exciton composition is controlled by pump fluence, with trions dominating the late-time relaxation. In surface doped samples, the same model with unchanged rates reproduces the full dynamics, linking the light-induced trions to their equilibrium counterparts through pump-induced dissociation and recapture. These results establish trARPES as a direct probe of charged quasiparticles far from equilibrium and open routes to optical control of neutral and charged excitations in correlated materials.

cond-mat.str-el↗

arXiv2014

Extrinsic Photodiodes for Integrated Mid-Infrared Silicon Photonics

Silicon photonics has recently been proposed for a diverse set of applications at mid-infrared wavelengths, the implementation of which require on-chip photodetectors. In planar geometries, dopant-based extrinsic photoconductors have long been used for mid-infrared detection with Si and Ge acting as host materials. Leveraging the dopant-induced sub-bandgap trap-states used in bulk photoconductors for waveguide integrated mid-infrared detectors offers simple processing, integration, and operation throughout the mid-infrared by appropriate choice of dopant. In particular, Si doped with Zn forms two trap levels ~ 0.3 eV and ~ 0.58 eV above the valence band, and has been utilized extensively for cryogenically cooled bulk extrinsic photoconductors. In this letter, we present room temperature operation of Zn+ implanted Si waveguide photodiodes from 2200 nm to 2400 nm, with measured responsivities of up to 87 mA/W and low dark currents of < 10 microamps.

physics.optics↗

arXiv2013

Simultaneous Mode and Wavelength Division Multiplexing On-Chip

Significant effort in optical-fiber research has been put in recent years into realizing mode-division multiplexing (MDM) in conjunction with wavelength-division multiplexing (WDM) to enable further scaling of the communication bandwidth per fiber. In contrast almost all integrated photonics operate exclusively in the single-mode regime. MDM is rarely considered for integrated photonics due to the difficulty in coupling selectively to high-order modes which usually results in high inter-modal crosstalk. Here we show the first demonstration of simultaneous on-chip mode and wavelength division multiplexing with low modal crosstalk and loss. Our approach can potentially increase the aggregate data rate by many times for on-chip ultra-high bandwidth communications.

physics.optics↗