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Norio Kumada

Publications and source records attributed to Norio Kumada.

At least 19 recordsLinked to original sources

Systematic study of superconductivity in few-layer $T_d$-MoTe$_2$

We present a systematic investigation of superconductivity in a topological superconductor candidate $T_{\rm d}$-MoTe$_2$ in the few-layer limit. By examining multiple mechanically exfoliated samples with different thicknesses, substrates and crystal qualities, we quantitatively correlate superconducting temperature ($T_c$) with disorder, carrier density, carrier type and mobility. By integrating these experimental findings with first-principles calculations, we reveal the relationship between the band structure and superconductivity in this material. Notably, in 2 L samples we access a highly hole-doped regime that has not been systematically explored in previous experiments, providing a complementary perspective to earlier studies. In this regime, we demonstrate that superconductivity can be realized in a manner consistent with a conventional phonon-mediated $s_{(++)}$-wave pairing.

cond-mat.mes-hall

Intrinsic ultrafast edge photocurrent dynamics in WTe$_2$ driven by broken crystal symmetry

Directional photocurrents in two-dimensional materials arise from broken crystal symmetry, offering pathways to high-speed, bias-free photodetection beyond conventional devices. Tungsten ditelluride (WTe$_2$), a type-II Weyl semimetal, exhibits robust symmetry-breaking-induced edge photocurrents from competing nonlinear optical and photothermoelectric mechanisms, whose intrinsic dynamics have remained experimentally inaccessible. Here, we directly resolve sub-picosecond edge photocurrent dynamics in WTe$_2$ through ohmic contacts over temperatures from 300 K to 4 K. We demonstrate ultrafast optical-to-electrical conversion with a 3 dB bandwidth of $\sim$250 GHz and reveal picosecond-timescale switching of the net photocurrent direction below 150 K, linked to a Lifshitz transition. This transient bipolar response arises from non-equilibrium Seebeck effects due to asymmetric cooling of hot electrons and holes. These findings reveal previously hidden ultrafast dynamics in symmetry-engineered materials, offering new strategies to disentangle competing photocurrent mechanisms and enabling the development of self-powered, ultrafast optoelectronic devices.

cond-mat.mes-hall

Super-diffusive sub-picosecond extraction of hot carriers in black phosphorous

Harvesting hot carriers before they lose energy to the lattice is a critical route toward surpassing the conventional thermodynamic limit in optical-to-electrical (O-E) conversion. However, photocurrent from such hot carriers has remained challenging to directly detect because they equilibrate on picosecond timescales, outpacing conventional electronic measurement. Here, by employing terahertz electronics with sub-picosecond temporal resolution, we directly monitor hot-carrier-driven O-E conversion in black phosphorus (BP). Photoexcitation near the metal contact under zero source-drain bias generates an ultrafast photocurrent with a decay time of ~400 fs, orders of magnitude faster than the typical sub-nanosecond energy relaxation in BP, demonstrating a measured 3 dB bandwidth of 260 GHz with an intrinsic limit of ~600 GHz. Notably, this photocurrent flows via energetic holes toward the contact electrode, regardless of the equilibrium carrier type, revealing a super-diffusive hot-carrier extraction mechanism. Furthermore, we show that the ultrafast hot-carrier contribution can coexist with the much slower cold-carrier contribution based on the photovoltaic effect, demonstrating that hot carriers can be harvested without discarding lower-energy carriers. These findings highlight the potential of sub-picosecond hot-carrier extraction to expand the O-E conversion bandwidth without sacrificing efficiency, bridging fundamental hot-carrier physics with ultrahigh-speed technological applications.

cond-mat.mes-hall

Effects of GaAs Buffer Layer on Structural, Magnetic, and Transport Properties of Magnetic Topological Insulators Cr$_y$(Bi$_x$Sb$_{1-x}$)$_{2-y}$Te$_3$ and V$_y$(Bi$_x$Sb$_{1-x}$)$_{2-y}$Te$_3$ Films

Here, we study the effects of a GaAs buffer layer on the structural, magnetic, and transport properties of Cr$_y$(Bi$_x$Sb$_{1-x}$)$_{2-y}$Te$_3$ magnetic topological insulator thin films and compare them with those of V$_y$(Bi$_x$Sb$_{1-x}$)$_{2-y}$Te$_3$, which we recently reported. Similar to the case of V$_y$(Bi$_x$Sb$_{1-x}$)$_{2-y}$Te$_3$, growth on a GaAs buffer layer leads to some distinctly different properties than direct growth on InP substrates. These include improved interface quality confirmed by transmission electron microscopy, enhanced magnetic coercive fields, and smaller resistivity peaks at the magnetization reversals. Furthermore, the Bi-ratio dependence of the carrier density reveals that the interface property also affects the Fermi level. These results demonstrate the importance of the buffer layer in controlling the electronic properties of the magnetic topological insulator films.

cond-mat.mes-hall

Andreev Reflection in the Quantum Hall Regime at an Al/InAs Junction on a Cleaved Edge

We have fabricated a superconductor/semiconductor (S/Sm) junction composed of Al and InAs using cleaved edge overgrowth. By exploiting the unique geometry with a thin Al/Pt/Al trilayer formed on the side surface of an in-situ cleaved heterostructure wafer containing an InAs quantum well, we achieve a superconducting critical field of 5 T, allowing superconductivity and quantum Hall (QH) effects to coexist down to Landau-level filling factor nu = 3. Andreev reflection at zero magnetic field shows a conductance enhancement that is limited solely by the Fermi velocity mismatch, demonstrating a virtually barrier-free, high-quality S/Sm junction. Bias spectroscopy in the QH regime reveals the opening of a superconducting gap, with the reduced downstream resistance demonstrating that the electron-hole Andreev conversion probability consistently exceeds 50%. Our results, obtained in a new experimental regime characterized by a clean edge-contacted junction with a superconducting electrode narrower than the coherence length, open new avenues for both theoretical and experimental studies of the interplay between superconductivity and QH effects and the engineering of exotic quasiparticles.

cond-mat.mes-hall

Effects of GaAs buffer layer on quantum anomalous Hall insulator Vy(BixSb1-x)2-yTe3

We report the growth, structural characterization, and transport properties of the quantum anomalous Hall insulator Vy(BixSb1-x)2-yTe3 (VBST) grown on a GaAs buffer layer by molecular beam epitaxy on a GaAs(111)A substrate. X-ray diffraction and transmission electron microscopy show that the implementation of a GaAs buffer layer improves the crystal and interface quality compared to the control sample grown directly on an InP substrate. Both samples exhibit the quantum anomalous Hall effect (QAHE), but with similar thermal stability despite the different structural properties. Notably, the QAHE in the sample grown on a GaAs buffer layer displays a significantly larger (almost double) coercive field with a much smaller resistivity peak at the magnetization reversal. Possible effects of the interface quality on the magnetic properties of VBST and the QAHE are discussed.

cond-mat.mtrl-sci

Mach-Zehnder interference of fractionalized electron-spin excitations

Inter-channel Coulomb interaction mixes charge excitations in copropagating quantum Hall edge channels, generating coupled excitation eigenmodes propagating at different speeds. This mode transformation causes an electron state to split into fragments, corresponding to the Tomonaga-Luttinger liquid model of a chiral one-dimensional electronic system. This paper reports the coherent evolution of an electron state under the fractionalization process in a Mach-Zehnder interferometer employing copropagating spin-up and spin-down channels as the interference paths. We observe the interference visibility oscillations as a function of the voltage bias applied between the interference paths, which are attributed to the second-order interference between the fractionalized spin excitations with different phase evolutions. This observation contrasts with the single-particle picture that predicts only the first-order interference, reflecting the phase evolution of a spin-up and spin-down superposition state during the one-way transport. The second-order interference manifests the coherent splitting of the superposition state to the mutually independent fast and slow excitations. Our observation offers the fractionalization process as a novel way to encode an electron spin state to spatially separated fragments.

cond-mat.mes-hall

On-chip transfer of ultrashort graphene plasmon wavepackets using terahertz electronics

Steering transport of ultrashort polariton wavepackets is essential for achieving on-chip integrated nanocircuits with tightly confined electromagnetic fields towards ultrafast information processing. However, conventional optical techniques have struggled to integrate the necessary components for transferring polariton signals. Here, we address this challenge by electrically generating, manipulating, and reading out terahertz graphene plasmon-polariton wavepackets on-chip. By injecting an electrical pulse into graphene via an ohmic contact, we achieve coherent conversion of the pulse into a plasmon wavepacket exhibiting a pulse duration of 1.2 ps and extreme three-dimensional spatial confinement within a volume of $2.1 \times 10^{-18} m^3$. We reveal the transport properties of plasmons along graphene ribbons in different dielectric environments, providing a basis for designing graphene plasmonic circuits. Furthermore, we find that the conversion efficiency between the electrical pulses and plasmon wavepackets reaches ~30% thanks to the absence of a momentum mismatch. With unprecedented controllability, our platform represents a significant advance in on-chip handling of plasmonic signals in various van der Waals heterostructures.

cond-mat.mes-hall

Coherent-Incoherent Crossover of Charge and Neutral Mode Transport as Evidence for the Disorder-Dominated Fractional Edge Phase

Couplings between topological edge channels open electronic phases possessing nontrivial eigenmodes far beyond the noninteracting-edge picture. However, inelastic scatterings mask the eigenmodes' inherent features, often preventing us from identifying the phases, as is the case for the quintessential Landau-level filling factor v = 2/3 edge composed of the counter-propagating v = 1/3 and 1 (1/3-1) channels. Here, we study the coherent-incoherent crossover of the 1/3-1 channels by tuning the channel length in-situ using a new device architecture comprising a junction of v = 1/3 and 1 systems, the particle-hole conjugate of the 2/3 edge. We successfully observed the concurrence of the fluctuating electrical conductance and the quantized thermal conductance in the crossover regime, the definitive hallmark of the eigenmodes in the disorder-dominated edge phase left experimentally unverified.

cond-mat.mes-hall

Fast time-domain current measurement for quantum dot charge sensing using a homemade cryogenic transimpedance amplifier

We developed a high-speed and low-noise time-domain current measurement scheme using a homemade GaAs high-electron-mobility-transistor-based cryogenic transimpedance amplifier (TIA). The scheme is versatile for broad cryogenic current measurements, including semiconductor spin-qubit readout, owing to the TIA's having low input impedance comparable to that of commercial room-temperature TIAs. The TIA has a broad frequency bandwidth and a low noise floor, with a trade-off between them governed by the feedback resistance $R_{FB}$. A lower $R_{FB}$ of 50 k$Ω$ enables high-speed current measurement with a -3dB cutoff frequency $f_{-3dB}$ = 28 MHz and noise-floor $NF = 8.5 \times 10^{-27}$ A$^{2}$/Hz, while a larger $R_{FB}$ of 400 k$Ω$ provides low-noise measurement with $NF = 1.0 \times 10^{-27}$ A$^{2}$/Hz and $f_{-3dB}$ = 4.5 MHz. Time-domain measurement of a 2-nA peak-to-peak square wave, which mimics the output of the standard spin-qubit readout technique via charge sensing, demonstrates a signal-to-noise ratio (SNR) of 12.7, with the time resolution of 48 ns, for $R_{FB}$ = 200 k$Ω$, which compares favorably with the best-reported values for the radio-frequency (RF) reflectometry technique. The time resolution can be further improved at the cost of the SNR (or vice versa) by using an even smaller (larger) $R_{FB}$, with a further reduction in the noise figure possible by limiting the frequency band with a low-pass filter. Our scheme is best suited for readout electronics for cryogenic sensors that require a high time resolution and current sensitivity and thus provides a solution for various fundamental research and industrial applications.

cond-mat.mes-hall

Time-resolved measurement of ambipolar edge magnetoplasmon transport in InAs/InGaSb composite quantum wells

Time-resolved charge transport measurement for one-dimensional edge states is a powerful means for investigating nonequilibrium charge dynamics and underlying interaction effects therein. Here, we report a versatile on-chip time-resolved transport measurement scheme that does not require a quantum point contact and is therefore applicable to narrow-gap systems. We apply the technique to non-inverted InAs/In$_{x}$Ga$_{1-x}$Sb composite quantum wells, where its ambipolar character enables us to demonstrate the scheme in both the electron and hole regimes separately using a single device. Time-resolved measurements in the quantum Hall regimes clearly exhibit the chirality of each carrier, with pulsed charge waveforms observed only for one magnetic field direction opposite for electrons and holes. Waveform analysis in the time domain reveals reduced group velocity and broadening of edge magnetoplasmon pulses in both the electron and hole regimes, suggesting the influence of charge puddles in the bulk. Our time-resolved measurement scheme, applicable to various systems, will pave the way for investigations of dynamical properties of exotic topological edge states.

cond-mat.mes-hall

Ultrafast intrinsic optical-to-electrical conversion dynamics in graphene photodetector

Optical-to-electrical (O-E) conversion in graphene is a central phenomenon for realizing anticipated ultrafast and low-power-consumption information technologies. However, revealing its mechanism and intrinsic time scale require uncharted terahertz (THz) electronics and device architectures. Here, we succeeded in resolving O-E conversion processes in high-quality graphene by on-chip electrical readout of ultrafast photothermoelectric current. By suppressing the RC time constant using a resistive zinc oxide top gate, we constructed a gate-tunable graphene photodetector with a bandwidth of up to 220 GHz. By measuring nonlocal photocurrent dynamics, we found that the photocurrent extraction from the electrode is instantaneous without a measurable carrier transit time across several-micrometer-long graphene, following the Shockley-Ramo theorem. The time for photocurrent generation is exceptionally tunable from immediate to > 4 ps, and its origin is identified as Fermi-level-dependent intraband carrier-carrier scattering. Our results bridge the gap between ultrafast optical science and device engineering, accelerating ultrafast graphene optoelectronic applications.

cond-mat.mes-hall

On-chip coherent frequency-domain THz spectroscopy for electrical transport

We developed a coherent frequency-domain THz spectroscopic technique on a coplanar waveguide in the ultrabroad frequency range from 200 MHz to 1.6 THz based on continuous wave (CW) laser spectroscopy. Optical beating created by mixing two frequency-tunable CW lasers is focused on photoconductive switches to generate and detect high-frequency current in a THz circuit. In contrast to time-domain spectroscopy, our frequency-domain spectroscopy enables unprecedented frequency resolution of 10 MHz without using complex building blocks of femtosecond laser optics. Furthermore, due to the coherent nature of the photomixing technique, we are able to identify the origin of multiple reflections in the time domain using the Hilbert analysis and inverse Fourier transform. These results demonstrate that the advantages of on-chip coherent frequency-domain spectroscopy, such as its broadband, frequency resolution, usability, and time-domain accessibility, provide a unique capability for measuring ultrafast electron transport in integrated THz circuits.

cond-mat.mes-hall

Active spatial control of terahertz graphene plasmons by tailoring carrier density profile

Graphene offers a possibility for actively controlling plasmon confinement and propagation by tailoring its spatial conductivity pattern. However, implementation of this concept has been hampered because uncontrollable plasmon reflection is easily induced by inhomogeneous dielectric environment. In this work, we demonstrate full electrical control of plasmon reflection/transmission at electronic boundaries induced by a zinc-oxide-based dual gate, which is designed to minimize the dielectric modulation. Using Fourier-transform infrared spectroscopy, we show that the plasmon reflection can be varied continuously with the carrier density difference between the adjacent regions. By utilizing this functionality, we show the ability to control size, position, and frequency of plasmon cavities. Our approach can be applied to various types of plasmonic devices, paving the way for implementing a programmable plasmonic circuit.

physics.app-ph

Coupling between Quantum Hall Edge Channels on Opposite Sides of a Hall Bar

We investigate the coupling between quantum Hall (QH) edge channels (ECs) located at opposite sides of a 50-um-wide Hall bar by exciting a charged wavepacket in one EC and detecting time-dependent current in the other EC. In a QH state, the current shows a peak followed by a dip, demonstrating the existence of capacitive coupling across the incompressible two-dimensional electron system (2DES). The observed magnetic field dependence of the amplitude and time delay of the current suggests that the capacitance is affected by the presence of localized states. We also show that the dominant manner of the coupling changes gradually as the system changes between the QH and non-QH states.

cond-mat.str-el

Plasmon Confinement by Carrier Density Modulation in Graphene

We investigate plasmon resonances in graphene with periodic carrier density modulation. The period is 8 um, and each period consists of 1.7- and 6.3-um-wide ribbons with different density. Using terahertz spectroscopy, we show two plasmon modes with their electric field mostly localized in the 1.7- or 6.3-um-wide ribbon arrays. We also show that plasmons are excited only in one of the micro-ribbon arrays when the Fermi energy of the other micro-ribbon array is set close to the charge neutrality point. These results indicate that plasmons can be confined by the carrier density modulation.

cond-mat.str-el

Charge Fractionalization in Artificial Tomonaga-Luttinger Liquids with Controlled Interaction Strength

We investigate charge fractionalizations in artificial Tomonaga-Luttinger liquids (TLLs) composed of two capacitively coupled quantum Hall edge channels (ECs) in graphene. The interaction strength of the artificial TLLs can be controlled through distance W between the ECs. We show that the fractionalization ratio r and the TLL mode velocity v vary with W. The experimentally obtained relation between v and r follows a unique function predicted by the TLL theory. We also show that charged wavepackets are reflected back and forth multiple times at both ends of the TLL region.

cond-mat.str-el

Evaluation of Disorder Introduced by Electrolyte Gating through Transport Measurements in Graphene

We evaluate the degree of disorder in electrolyte gating devices through the transport measurements in graphene. By comparing the mobility in ion- and standard metal-gated devices, we show that the deposition of the ionic liquid introduces charged impurities with a density of approximately $6\times 10^{12}$ cm$^{-2}$; setting the upper limit of the mobility in graphene to 3000 cm$^2$/Vs. At higher temperature, phonons in the ionic liquid further reduce the mobility, making its upper limit 2000 cm$^2$/Vs at room temperature. Since the degree of disorder is independent of the base material, these results are valuable towards understanding disorder effects in general devices using electrolyte gating.

cond-mat.mes-hall