arXiv subjects

Nuala M. Caffrey

Publications and source records attributed to Nuala M. Caffrey.

13 recordsLinked to original sources

arXiv2026

Influence of stacking, coordination, and surface chemistry on Al intercalation in V$_2$CT$_2$ and Ti$_3$C$_2$T$_2$ MXenes for Al-ion batteries

As the energy storage ecosystem evolves beyond lithium, MXenes, a versatile family of 2D materials derived from MAX phases, have emerged as promising candidates for next-generation energy storage electrodes due to their tunable surface chemistry, large interlayer spacing, and excellent electronic conductivity. In this work, we use density functional theory to investigate Ti$_3$C$_2$ and V$_2$C MXenes as cathodes in Al-ion batteries. Four stacking configurations of the two-dimensional sheets and two different ion coordination sites are evaluated to understand their influence on ion intercalation and mobility. We find that the stacking configuration and surface chemistry critically impact interlayer spacing and electrochemical performance. O-terminated layers in an octahedral stacking exhibit remarkable structural stability with minimal interlayer expansion upon ion intercalation, particularly for Al intercalation in V$_2$C which exhibits an interlayer expansion of 0.1 angstrom, consistent with experimental findings. While octahedral stacking is observed to be energetically more favourable, it reduces ion mobility compared to prismatic stacking. Furthermore, O-terminated MXenes exhibit high theoretical specific capacities, reaching more than 270 mAh/g. F-terminated MXenes are considerably more unstable after intercalation and as a result exhibit much lower Al capacities. These findings highlight the importance of stacking configurations, termination and intercalant chemistry in MXenes for battery applications.

cond-mat.mtrl-sci↗

arXiv2023

The role of solvent interfacial structural ordering in maintaining stable graphene dispersions

Liquid phase exfoliation (LPE) is the most promising method for the low-cost, scalable production of two-dimensional nanosheets from their bulk counterparts. Extensive exfoliation occurs in most solvents due to the huge amount of energy introduced by sonication or shear mixing. However, the subsequent dispersion is not always stable, with extensive reaggregation occurring in some solvents. Identifying the optimal solvent for a particular layered material is difficult and requires a fundamental understanding of the mechanism involved in maintaining a stable dispersion. Here, we use molecular dynamics calculations to show that when graphene is immersed in a solvent, distinct solvation layers are formed irrespective of the choice of solvent and their formation is energetically favourable for all considered solvents. However, energetic considerations such as these do not explain the experimental solvent-dependence of the dispersion concentration. Instead, we find that solvents with high diffusion coefficients parallel to the graphene layer result in the lowest experimental concentration of graphene in solution. This can be explained by the enhanced ease of reaggregation in these solvents. Solvents with smaller diffusion coefficients result in higher experimental graphene concentrations as reaggregation is prevented. In the low diffusion limit, however, this relationship breaks down. We suggest that here the concentration of graphene in solution depends primarily on the separation efficiency of the initial exfoliation step. Based on this, we predict that the concentration of exfoliated graphene in solvents such as benzaldehyde and quinoline, which have low diffusion constants, can be increased dramatically by careful tuning of the experimental sonication parameters.

cond-mat.mtrl-sci↗

arXiv2023

One-dimensional topological channels in heterostrained bilayer graphene

The domain walls between AB- and BA-stacked gapped bilayer graphene have garnered intense interest as they host topologically-protected, valley-polarised transport channels. The introduction of a twist angle between the bilayers and the associated formation of a Moire pattern has been the dominant method used to study these topological channels, but heterostrain can also give rise to similar stacking domains and interfaces. Here, we theoretically study the electronic structure of a uniaxially heterostrained bilayer graphene. We discuss the formation and evolution of interface-localized channels in the one-dimensional Moire pattern that emerges due to the different stacking registries between the two layers. We find that a uniform heterostrain is not sufficient to create one-dimensional topological channels in biased bilayer graphene. Instead, using a simple model to account for the in-plane atomic reconstruction driven by the changing stacking registry, we show that the resulting expanded Bernal-stacked domains and sharper interfaces are required for robust topological interfaces to emerge. These states are highly localised in the AA- or SP-stacked interface regions and exhibit differences in their layer and sublattice distribution depending on the interface stacking. We conclude that heterostrain can be used as a mechanism to tune the presence and distribution of topological channels in gapped bilayer graphene systems, complementary to the field of twistronics.

cond-mat.mes-hall↗

arXiv2022

Strain-induced stacking transition in bilayer graphene

Strain, both naturally occurring and deliberately engineered, can have a considerable effect on the structural and electronic properties of 2D and layered materials. Uniaxial or biaxial heterostrain modifies the stacking arrangement of bilayer graphene (BLG) which subsequently influences the electronic structure of the bilayer. Here, we use Density Functional Theory (DFT) calculations to investigate the interplay between an external applied heterostrain and the resulting stacking in BLG. We determine how a strain applied to one layer is transferred to a second, 'free' layer and at what critical strain the ground-state AB-stacking is disrupted. To overcome limitations introduced by periodic boundary conditions, we consider an approximate system consisting of an infinite graphene sheet and an armchair graphene nanoribbon (AGNR). We find that above a critical strain of ~1%, it is energetically favourable for the free layer to be unstrained, indicating a transition between uniform AB-stacking and non-uniform mixed stacking. This is in agreement with a simple model estimate based on the individual energy contributions of strain and stacking effects. Our findings suggest that small levels of strain provide a platform to reversibly engineer stacking order and Moiré features in bilayers, providing a viable alternative to twistronics to engineer topological and exotic physical phenomena in such systems.

cond-mat.mtrl-sci↗

arXiv2019

Composition Dependence of the Charge Driven Phase Transition in Group-VI Transition Metal Dichalcogenides

Materials exhibiting multiple stable phases can be used as functional components in electronic and optical applications if the phase transition is controllable. Group-VI transition metal dichalcogenides (TMDs, MX$_2$, where M=Mo, W and X = S, Se) are known to undergo charge induced transitions from semi-conducting H phases to metallic T phases. This occurs, for example, when bulk TMDs are exfoliated with the aid of alkali ion intercalants. However, it is difficult to experimentally decouple the effect of composition-dependent phase transition barriers from indirect effects related to the exfoliation process. Here, using first-principles calculations, we study the energetics of transition between the different structural polytypes of four group-VI TMDs upon lithium adsorption. We find that both the activation barrier from the H phase to the metallic phase in charged monolayers and the reverse barrier in neutral monolayers are required to explain experimental results. We show that the high proportion of metallic phase found in WS$_2$ monolayers after alkali treatment can be explained by high transition barriers to revert back to the H phase once in a neutral state. The calculated barriers however cannot explain the low proportion of metallic phase found in MoS$_2$ monolayers in some experiments and so non-electronic effects must also play a role.

cond-mat.mtrl-sci↗

arXiv2018

Effect of mixed surface terminations on the structural and electrochemical properties of two-dimensional Ti3C2T2 and V2CT2 MXenes multilayers

MXenes, a family of layered transition metal carbides and nitrides, have shown great promise for use in emerging electrochemical energy storage devices, including batteries and supercapacitors. MXene surfaces are terminated by mixed -O, -F and -OH functional groups as a result of the chemical etching production process. These functional groups are known to be randomly distributed over the surfaces, with limited experimental control over their composition. There is considerable debate regarding the contribution of these functional groups to the properties of the underlying MXene material. For instance, their measured Li or Na capacity is far lower than that predicted by theoretical simulations, which generally assume uniformly terminated surfaces. The extent to which this structural simplification contributes to such discrepancies is unknown. We address this issue by employing first-principles calculations to compare the structural, electronic and electrochemical properties of two common MXenes, namely Ti3C2Tx and V2CTx, with both uniform terminating groups and explicitly mixed terminations. Weighted averages of uniformly-terminated layer properties are found to give excellent approximations to those of more realistic, randomly-terminated structures. The sodium storage capacity and volume change during sodiation in the interlayer space of these MXenes with mixed surface terminations are also investigated. The redox reaction is shown to be confined to the terminating groups for low concentrations of intercalated Na, with the oxidation state of the metal atoms unaffected until higher concentrations of intercalated Na are achieved. Finally, the average open circuit voltage is shown to be very similar for both Ti3C2T2Na and V2CT2Na with mixed terminations, although it is highly sensitive to the particular composition of the terminating groups.

cond-mat.mtrl-sci↗

arXiv2018

Adsorption of common solvent molecules on graphene and MoS$_2$ from first-principles

Solvents are an essential element in the production and processing of two-dimensional (2D) materials. For example, the liquid phase exfoliation of layered materials requires a solvent to prevent the resulting monolayers from re-aggregating, while solutions of functional atoms and molecules are routinely used to modify the properties of the layers. It is generally assumed that these solvents do not interact strongly with the layer and so their effects can be neglected. Yet experimental evidence has suggested that explicit atomic-scale interactions between the solvent and layered material may play a crucial role in exfoliation and cause unintended electronic changes in the layer. Little is known about the precise nature of the interaction between the solvent molecules and the 2D layer. Here, we use density functional theory calculations to determine the adsorption configuration and binding energy of a variety of common solvent molecules, both polar and non-polar, on two of the most popular 2D materials, namely graphene and MoS$_2$. We show that these molecules are physisorbed on the surface with negligible charge transferred between them. We find that the adsorption strength of the different molecules is independent of the polar nature of the solvent. However, we show the molecules induce a significant charge rearrangement at the interface after adsorption as a result of polar bonds in the molecule.

cond-mat.mtrl-sci↗

arXiv2016

Structural and electronic properties of Li intercalated graphene on SiC(0001)

We investigate the structural and electronic properties of Li-intercalated monolayer graphene on SiC(0001) using combined angle-resolved photoemission spectroscopy and first-principles density functional theory. Li intercalates at room temperature both at the interface between the buffer layer and SiC and between the two carbon layers. The graphene is strongly $n$-doped due to charge transfer from the Li atoms and two $π$-bands are visible at the $\bar{K}$-point. After heating the sample to 300$^\circ$C, these $π$-bands become sharp and have a distinctly different dispersion to that of Bernal-stacked bilayer graphene. We suggest that the Li atoms intercalate between the two carbon layers with an ordered structure, similar to that of bulk LiC$_6$. An AA-stacking of these two layers becomes energetically favourable. The $π$-bands around the $\bar{K}$-point closely resemble the calculated band structure of a C$_6$LiC$_6$ system, where the intercalated Li atoms impose a super-potential on the graphene electronic structure that opens pseudo-gaps at the Dirac points of the two $π$-cones.

cond-mat.mtrl-sci↗

arXiv2014

Tunnelling anisotropic magnetoresistance effect of single adatoms on a noncollinear magnetic surface

The tunnelling anisotropic magnetoresistance (TAMR) effect describes the sensitivity of spin-polarized electron transport to the orientation of the magnetization with respect to the crystallographic axes. As the TAMR effect requires only a single magnetic electrode, in contrast to the tunnelling magnetoresistance effect, it offers an attractive route towards alternative spintronics applications. In this work we consider the TAMR effect at the single-atom limit by investigating the anisotropy of the local density of states in the vacuum above transition-metal adatoms adsorbed on a noncollinear magnetic surface, the monolayer of Mn on W(110). This surface presents a cycloidal spin spiral ground state with an angle of 173$^\circ$ between neighbouring spins and thus allows a quasi-continuous exploration of the angular dependence of the TAMR of adsorbed adatoms using scanning tunnelling microscopy. Using first-principles calculations, we investigate the TAMR of Co, Rh and Ir adatoms on Mn/W(110) and relate our results to magnetization direction dependent changes in the local density of states. The anisotropic effect is found to be enhanced dramatically on the adsorption of heavy transition-metal atoms, with values of up to 50% predicted from our calculations. This effect will be measurable even with a non-magnetic STM tip.

cond-mat.mtrl-sci↗

arXiv2013

Atomic-scale inversion of spin polarization at an organic-antiferromagnetic interface

Using first-principles calculations, we show that the magnetic properties of a two-dimensional antiferromagnetic transition-metal surface are modified on the atomic scale by the adsorption of small organic molecules. We consider benzene (C6H6), cyclooctatetraene (C8H8) and a small transition metal - benzene complex (BzV) adsorbed on a single atomic layer of Mn deposited on the W(110) surface -- a surface which exhibits a nearly antiferromagnetic alignment of the magnetic moments in adjacent Mn rows. Due to the spin-dependent hybridization of the molecular pz orbitals with the d states of the Mn monolayer there is a significant reduction of the magnetic moments in the Mn film. Furthermore, the spin-polarization at this organic-antiferromagnetic interface is found to be modulated on the atomic scale, both enhanced and inverted, as a result of the molecular adsorption. We show that this effect can be resolved by spin-polarized scanning tunneling microscopy (SP-STM). Our simulated SP-STM images display a spatially-dependent spin-resolved vacuum charge density above an adsorbed molecule -- i.e., different regions above the molecule sustain different signs of spin polarization. While states with s and p symmetry dominate the vacuum charge density in the vicinity of the Fermi energy for the clean magnetic surface, we demonstrate that after a molecule is adsorbed those d-states, which are normally suppressed due to their symmetry, can play a crucial role in the vacuum due to their interaction with the molecular orbitals. We also model the effect of small deviations from perfect antiferromagnetic ordering, induced by the slight canting of magnetic moments due to the spin spiral ground state of Mn/W(110).

cond-mat.mtrl-sci↗

arXiv2013

Spin-filtering efficiency of ferrimagnetic spinels CoFe2O4 and NiFe2O4

We assess the potential of the ferrimagnetic spinel ferrites CoFe2O4 and NiFe2O4 to act as spin filtering barriers in magnetic tunnel junctions. Our study is based on the electronic structure calculated by means of first-principles density functional theory within different approximations for the exchange correlation energy. We show that, in agreement with previous calculations, the densities of states suggest a lower tunneling barrier for minority spin electrons, and thus a negative spin-filter effect. However, a more detailed analysis based on the complex band-structure reveals that both signs for the spin-filtering efficiency are possible, depending on the band alignment between the electrode and the barrier materials and depending on the specific wave-function symmetry of the relevant bands within the electrode.

cond-mat.mtrl-sci↗

arXiv2010

Large bias-dependent magnetoresistance in all-oxide magnetic tunnel junctions with a ferroelectric barrier

All-oxide magnetic tunnel junctions (MTJs) incorporating functional materials as insulating barriers have the potential of becoming the founding technology for novel multi-functional devices. We investigate, by first-principles density functional theory, the bias-dependent transport properties of an all-oxide SrRuO3/BaTiO3/SrRuO3 MTJ. This incorporates a BaTiO3 barrier which can be found either in a non-ferroic or in a ferroelectric state. In such an MTJ not only can the tunneling magnetoresistance reach enormous values, but also, for certain voltages, its sign can be changed by altering the barrier electric state. These findings pave the way for a new generation of electrically-controlled magnetic sensors.

cond-mat.mtrl-sci↗

arXiv2008

Electronic properties of bulk and thin film SrRuO$_3$: a search for the metal-insulator transition

We calculate the properties of the 4$d$ ferromagnet SrRuO$_3$ in bulk and thin film form with the aim of understanding the experimentally observed metal to insulator transition at reduced thickness. Although the spatial extent of the 4$d$ orbitals is quite large, many experimental results have suggested that electron-electron correlations play an important role in determining this material's electronic structure. In order to investigate the importance of correlation, we use two approaches which go beyond the conventional local density approximation to density functional theory (DFT): the local spin density approximation + Hubbard $U$ (LSDA+$U$) and the pseudopotential self-interaction correction (pseudo-SIC) methods. We find that the details of the electronic structure predicted with the LSDA do not agree with the experimental spectroscopic data for bulk and thin film SrRuO$_3$. Improvement is found by including electron-electron correlations, and we suggest that bulk orthorhombic SrRuO$_3$ is a {\it weakly strongly-correlated} ferromagnet whose electronic structure is best described by a 0.6 eV on-site Hubbard term, or equivalently with corrections for the self-interaction error. We also perform {\it ab initio} transport calculations that confirm that SrRuO$_3$ has a negative spin polarization at the Fermi level, due to the position of the minority Ru 4$d$ band center. Even with correlations included in our calculations we are unable to reproduce the experimentally observed metal-insulator transition, suggesting that the electronic behavior of SrRuO$_3$ ultra-thin films might be dominated by extrinsic factors such as surface disorder and defects.

cond-mat.mtrl-sci↗