Excitonic parameters of InxGa1-xAs-GaAs heterostructures with quantum wells at low temperatures
Characteristics of GaAs/In$_{x}$Ga$_{1-x}$As/GaAs heterostructures with a single quantum well, which were obtained at various growth parameters, are evaluated according to the results of measurements of low-temperature photoluminescence spectra and their corresponding theoretical analysis.
cond-mat.mtrl-sci↗