arXiv subjects

O. V. Kibis

Publications and source records attributed to O. V. Kibis.

At least 37 records · Page 2Linked to original sources

arXiv2022

All-optical control of excitons in semiconductor quantum wells

Applying the Floquet theory, we developed the method to control excitonic properties of semiconductor quantum wells by a high-frequency electromagnetic field. It is demonstrated, particularly, that the field induces the blue shift of exciton emission from the quantum wells and narrows width of the corresponding spectral line. As a consequence, the field strongly modifies optical properties of the quantum wells and, therefore, can be used to tune characteristics of the optoelectronic devices based on them.

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arXiv2021

Optically induced hybrid Bose-Fermi system in quantum wells with different charge carriers

It is demonstrated theoretically that the circularly polarized irradiation of two-dimensional conducting systems can produce the composite bosons consisting of two electrons with different effective masses (different charge carriers), which are stable due to the Fermi sea of conduction electrons. As a result, the optically induced mixture of paired electrons and normal conduction electrons (the hybrid Bose-Fermi system) appears. Elementary excitations in such a hybrid system are analyzed and possible manifestations of the light-induced electron pairing are discussed for semiconductor quantum wells.

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arXiv2021

Optically induced Kondo effect in semiconductor quantum wells

It is demonstrated theoretically that the circularly polarized irradiation of two-dimensional electron systems can induce the localized electron states which antiferromagnetically interact with conduction electrons, resulting in the Kondo effect. Conditions of experimental observation of the effect are discussed for semiconductor quantum wells.

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arXiv2021

Optically induced persistent current in carbon nanotubes

We demonstrate theoretically that an off-resonant circularly polarized electromagnetic field can induce a persistent current in carbon nanotubes, which corresponds to electron rotation about the nanotube axis. As a consequence, the nanotubes acquire magnetic moment along the axis, which depends on their crystal structure and can be detected in state-of-the-art measurements. This effect and related phenomena are analyzed within the developed Floquet theory describing the electronic properties of the nanotubes irradiated by the field.

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arXiv2020

Fano resonances in optical spectra of semiconductor quantum wells driven by an oscillating field

Optical spectra of semiconductor quantum wells driven by an off-resonant oscillating field are studied theoretically. Due to the dynamical stabilization effect, the field induces the quasi-stationary electron states confined at repulsive scatterers and immersed into the continuum of states of conduction electrons. As a result, the Fano resonances in the spectra of interband optical transitions appear near the energies of the quasi-stationary states.

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arXiv2020

Light-induced bound electron states in two-dimensional systems: Contribution to electron transport

In two-dimensional (2D) electron systems, an off-resonant high-frequency circularly polarized electromagnetic field can induce the quasi-stationary bound electron states of repulsive scatterers. As a consequence, the resonant scattering of conduction electrons through the quasi-stationary states and the capture of conduction electrons by the states appear. The present theory describes the transport properties of 2D electron gas irradiated by a circularly polarized light, which are modified by these processes. Particularly, it is demonstrated that irradiation of 2D electron systems by the off-resonant field results in the quantum correction to conductivity of resonant kind.

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arXiv2020

Floquet engineering of the Luttinger Hamiltonian

Within the Floquet theory of periodically driven quantum systems, we developed the theory of light-induced modification of electronic states in semiconductor materials described by the Luttinger Hamiltonian (the electronic term $Γ_8$). Particularly, exact solutions of the Floquet problem are found for the band edge in the cases of linearly and circularly polarized irradiation. It is shown that the irradiation changes electron effective masses near the band edge, induces anisotropy of the electron dispersion and splits the bands. It is demonstrated that the light-induced band splitting strongly depends on the light polarization. Namely, the circularly polarized light acts similarly to a stationary magnetic field and lifts the spin degeneracy of electron branches, whereas a linearly polarized light does not affect the spin degeneracy and only splits the bands in the center of the Brillouin zone. The present theory can be applied to describe electronic properties of various semiconductor structures irradiated by an electromagnetic field in the broad frequency range.

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arXiv2019

On the possibility of a terahertz light emitting diode based on a dressed quantum well

We consider theoretically the realization of a tunable terahertz light emitting diode from a quantum well with dressed electrons placed in a highly doped p-n junction. In the considered system the strong resonant dressing field forms dynamic Stark gaps in the valence and conduction bands and the electric field inside the p-n junction makes the QW asymmetric. It is shown that the electrons transiting through the light induced Stark gaps in the conduction band emit photons with energy directly proportional to the dressing field. This scheme is tunable, compact, and shows a fair efficiency.

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arXiv2019

Electron pairing in nanostructures driven by an oscillating field

It is shown theoretically that the confinement of an electron at a repulsive potential can exist in nanostructures subjected to a strong high-frequency electromagnetic field. As a result of the confinement, the metastable bound electron state of the repulsive potential appears. This effect can lead, particularly, to electron pairing in nanostructures containing conduction electrons with different effective masses.

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arXiv2019

Structure of surface electronic states in strained mercury telluride

We present the theory describing the various surface electronic states arisen from the mixing of conduction and valence bands in a strained mercury telluride (HgTe) bulk material. We demonstrate that the strain-induced band gap in the Brillouin zone center of HgTe results in the surface states of two different kinds. Surface states of the first kind exist in the small region of electron wave vectors near the center of the Brillouin zone and have the Dirac linear electron dispersion characteristic for topological states. The surface states of the second kind exist only far from the center of the Brillouin zone and have the parabolic dispersion for large wave vectors. The structure of these surface electronic states is studied both analytically and numerically in the broad range of their parameters, aiming to develop its systematic understanding for the relevant model Hamiltonian. The results bring attention to the rich surface physics relevant for topological systems.

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arXiv2019

Terahertz optoelectronics of quantum rings and nanohelices

We outline a range of proposals on using quantum rings and nanohelices for terahertz device implementations. We show that an Aharonov-Bohm quantum ring system and a double-gated quantum ring system both permit control over the polarization properties of the associated terahertz radiation. In addition, we review the superlattice properties of a mathematically similar system, that of a nanohelix in external electric fields, which reveals negative differential conductance.

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arXiv2019

Optically induced topological states on the surface of mercury telluride

We developed the theory which describes the Floquet engineering of surface electronic modes in bulk mercury telluride (HgTe) by a circularly polarized electromagnetic field. The analysis shows that the field results in appearance of the surface states which arise from the mixing of conduction and valence bands of HgTe. Their branches lie near the center of the Brillouin zone and have the Dirac dispersion characteristic for topological states. Besides them, the irradiation induces the gap between the conduction and valence bands of HgTe. Thus, the irradiation can turn mercury telluride into topological insulator from gapless semiconductor. It is demonstrated that the optically induced states differ substantially from the non-topological surface states existing in HgTe without irradiation. The structure of the found states is studied both analytically and numerically in the broad range of their parameters.

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arXiv2018

Semiconductor quantum well irradiated by a two-mode electromagnetic field as a terahertz emitter

We study theoretically the nonlinear optical properties of a semiconductor quantum well (QW) irradiated by a two-mode electromagnetic wave consisting of a strong resonant dressing field and a weak off-resonant driving field. In the considered strongly coupled electron-field system, the dressing field opens dynamic Stark gaps in the electron energy spectrum of the QW, whereas the driving field induces electron oscillations in the QW plane. Since the gapped electron spectrum restricts the amplitude of the oscillations, the emission of a frequency comb from the QW appears. Therefore, the doubly-driven QW operates as a nonlinear optical element which can be used, particularly, for optically controlled generation of terahertz radiation.

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arXiv2018

Quantum ring with the Rashba spin-orbit interaction in the regime of strong light-matter coupling

We developed the theory of electronic properties of semiconductor quantum rings with the Rashba spin-orbit interaction irradiated by an off-resonant high-frequency electromagnetic field (dressing field). Within the Floquet theory of periodically driven quantum systems, it is demonstrated that the dressing field drastically modifies all electronic characteristics of the rings, including spin-orbit coupling, effective electron mass and optical response. Particularly, the present effect paves the way to controlling the spin polarization of electrons with light in prospective ring-shaped spintronic devices.

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arXiv2018

Periodic array of quantum rings strongly coupled to circularly polarized light as a topological insulator

We demonstrate theoretically that a strong high-frequency circularly polarized electromagnetic field can turn a two-dimensional periodic array of interconnected quantum rings into a topological insulator. The elaborated approach is applicable to calculate and analyze the electron energy spectrum of the array, the energy spectrum of the edge states and the corresponding electronic densities. As a result, the present theory paves the way to optical control of the topological phases in ring-based mesoscopic structures.

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arXiv2017

Optically induced Lifshitz transition in bilayer graphene

It is shown theoretically that the renormalization of the electron energy spectrum of bilayer graphene with a strong high-frequency electromagnetic field (dressing field) results in the Lifshitz transition - the abrupt change in the topology of the Fermi surface near the band edge. This effect substantially depends on the polarization of the field: The linearly polarized dressing field induces the Lifshitz transition from the quadruply-connected Fermi surface to the doubly-connected one, whereas the circularly polarized field induces the multicritical point, where the four different Fermi topologies may coexist. As a consequence, the discussed phenomenon creates physical basis to control the electronic properties of bilayer graphene with light.

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arXiv2017

Floquet control of dipolaritons in quantum wells

We developed the theory of dipolaritons in semiconductor quantum wells irradiated by an off-resonant electromagnetic wave (dressing field). Solving the Floquet problem for the dressed dipolaritons, we demonstrated that the field drastically modifies all dipolaritonic properties. In particular, the dressing field strongly effects on terahertz emission from the considered system. The described effect paves the way for optical control of prospective dipolariton-based terahertz devices.

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arXiv2017

All-optical band engineering of gapped Dirac materials

We demonstrate theoretically that the interaction of electrons in gapped Dirac materials (gapped graphene and transition-metal dichalchogenide monolayers) with a strong off-resonant electromagnetic field (dressing field) substantially renormalizes the band gaps and the spin-orbit splitting. Moreover, the renormalized electronic parameters drastically depend on the field polarization. Namely, a linearly polarized dressing field always decreases the band gap (and, particularly, can turn the gap into zero), whereas a circularly polarized field breaks the equivalence of valleys in different points of the Brillouin zone and can both increase and decrease corresponding band gaps. As a consequence, the dressing field can serve as an effective tool to control spin and valley properties of the materials and be potentially exploited in optoelectronic applications.

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