arXiv subjects

O. V. Koplak

Publications and source records attributed to O. V. Koplak.

3 recordsLinked to original sources

arXiv2024

Influence of buffer/protective layers on the structural and magnetic properties of SmCo films on Silicon

Integration of Samarium Cobalt hard magnets on silicon requires buffer/protective layers that can enhance the magnetic properties of the magnet while preserving its structure and chemical composition after post-annealing treatments needed for the formation of the magnetically hard phase. In this work, a comparison of Samarium-Cobalt films for five different buffer/protective layers, namely Ti, W, TiW, Ta, Cr and two different annealing temperatures, 650°C and 750°C, is presented. Depending on materials and annealing temperatures, magnetic properties such as saturation and coercivity of the SmCo film can be finely tuned. We show that coercivity up to 3.65 T or saturation magnetization up to 0.95 T can be reached by proper choice of the relevant process parameters: deposition temperature, material for the buffer/protective layer and annealing temperature. Such value of coercivity is among the highest found in literature for thin films of SmCo.

cond-mat.mtrl-sci↗

arXiv2023

Ultrafast Emergence of Ferromagnetism in Antiferromagnetic FeRh in High Magnetic Fields

Ultrafast heating of FeRh by a femtosecond laser pulse launches a magneto-structural phase transition from an antiferromagnetic to a ferromagnetic state. Aiming to reveal the ultrafast kinetics of this transition, we studied magnetization dynamics with the help of the magneto-optical Kerr effect in a broad range of temperatures (from 4 K to 400 K) and magnetic fields (up to 25 T). Three different types of ultrafast magnetization dynamics were observed and, using a numerically calculated H-T phase diagram, the differences were explained by different initial states of FeRh corresponding to a (i) collinear antiferromagnetic, (ii) canted antiferromagnetic and (iii) ferromagnetic alignment of spins. We argue that ultrafast heating of FeRh in the canted antiferromagnetic phase launches practically the fastest possible emergence of magnetization in this material. The magnetization emerges on a time scale of 2 ps, which corresponds to the earlier reported time-scale of the structural changes during the phase transition.

cond-mat.mtrl-sci↗

arXiv2014

Condensation of holes into antiferromagnetic droplets in the organic semiconductor (DOEO)$_4$[HgBr$_4$]TCE

Changes of the electronic structure accompanied by charge localization and a transition to an antiferromagnetic ground state were observed in the (DOEO)$_4$[HgBr$_4$]TCE organic semiconductor. Localization starts in the region of about 150 K and the antiferromagnetic state occurs below 60 K. The magnetic moment of the crystal contains contributions of antiferromagnetic inclusions (droplets), individual paramagnetic centers formed by localized holes and free charge carriers at 2 K. Two types of inclusions of 100-400 nm and 2-5 nm sizes were revealed by transmission electron microscopy. Studying the symmetry of the antiferromagnetic droplets (100-400 nm inclusions) and individual localized holes by electron spin resonance (ESR) revealed fingerprints of the antiferromagnetic resonance spectra of the spin correlated droplets as well as paramagnetic resonance spectra of the individual localized charge carriers. Photoelectron spectroscopy in the VUV, soft and hard X-ray range shows temperature-dependent effects upon crossing the critical temperature. The substantially different probing depths of soft and hard X-ray photoelectron spectroscopy yield information on the surface termination. The combined investigation using soft and hard X-ray photons to study the same sample results in details of electronic structure including structural aspects at the surface.

cond-mat.str-el↗