arXiv subjects

O. V. Pshyk

Publications and source records attributed to O. V. Pshyk.

4 recordsLinked to original sources

arXiv2025

Auger parameter analysis for TiN and AlN thin films via combined in-situ XPS and HAXPES

Auger parameter analysis provides in-depth information about the electronic and chemical bonding properties of TiN and AlN thin films, which are relevant across a wide range of technologies. Meaningful interpretation and analysis of the Auger parameter of these materials have been hindered due to, among other reasons, the absence of reliable references. Here we present a comprehensive study of Auger parameters for TiN and AlN thin films using a dual-source lab-based XPS/HAXPES system equipped with Al Ka and Cr Ka x-ray sources. Due to a large spread of excitation x-ray energy, bulk- and surface-sensitive core-level photoelectrons and Auger transitions are probed. This allows us to study a wide range of Auger and core-level emission lines of TiN and AlN. These measurements can serve as references for further identification of chemical state changes, oxidation state or any deviations in the local chemical environment in these materials. UHV sample transfer was employed to minimise surface contamination. Additionally, we demonstrate how common procedures such as ambient air exposure and Ar+ sputter-etching influence the Auger parameters, highlighting the importance of surface preparation in spectroscopic analysis.

cond-mat.mtrl-sci↗

arXiv2024

Computationally-guided discovery and synthesis of the amorphous nitride Y2WN4

Amorphous materials offer unique functional characteristics, which are often not observed in their crystalline counterparts. This makes them invaluable for many technological applications, such as diffusion barriers in semiconductor devices. However, the computationally guided search for new functional amorphous materials with attractive properties represents a major challenge. In this work, we combine theory and experiment to discover and synthesize the amorphous ternary nitride Y2WN4. We show how computational random structure sampling offers a route to robustly identify chemistries which are hard to crystallize. Experiments prove that the predicted nitride is easily synthesized in amorphous phase with no detectable precipitates. The material exhibits remarkable stability against crystallization at high temperature and as well as excellent oxidation resistance and stability against Cu diffusion. Moreover, Y2WN4 exhibits a sharp onset of optical absorption and an indirect band gap of 2.24 eV. These properties make this material promising for the integration in electronic devices as a high-performance diffusion barrier with adjustable band edges.

cond-mat.mtrl-sci↗

arXiv2024

Unlocking ultrastrong high-temperature ceramics: Beyond Equimolar Compositions in High Entropy Nitrides

Traditionally, increasing compositional complexity and chemical diversity of high entropy alloy ceramics whilst maintaining a stable single-phase solid solution has been a primary design strategy for the development of new ceramics. However, only a handful have shown properties that justify the increased alloying content. Here, we unveil a groundbreaking strategy based on deviation from conventional equimolar composition towards non-equimolar composition space, enabling tuning the metastability level of the supersaturated single-phase solid solution. By employing high-temperature micromechanical testing of refractory metal-based high entropy nitrides, we found that the activation of an additional strengthening mechanism upon metastable phase decomposition propels the yield strength of a non-equimolar nitride at 1000 C to a staggering 6.9 GPa, that is 40 % higher than the most robust equimolar nitride. We show that the inherent instability triggers the decomposition of the solid solution with non-equimolar composition at high temperatures, inducing strengthening due to the coherency stress of a spinodally modulated structure, combined with the lattice resistance of the product solid solution phase. In stark contrast, the strength of equimolar systems, boasting diverse chemical compositions, declines as a function of temperature due to the weakening of the lattice resistance and the absence of other strengthening mechanisms.

cond-mat.mtrl-sci↗

arXiv2024

Beyond structural stabilization of highly-textured AlN thin film: the role of chemical effects

The crystalline quality and degree of c-axis orientation of hexagonal AlN thin films correlate directly with their functional properties. Therefore, achieving AlN thin films of high crystalline quality and texture is of extraordinary importance for many applications, but in particular in electronic devices. Here, we present a systematic study revealing that the growth of c-axis orientated AlN thin films can be governed by a chemical stabilization effect in addition to the conventionally known structural, i.e. strain-induced, stabilization mechanism. The promotion of in-plane growth of AlN grains with c-axis out-of-plane orientation is demonstrated on Y, W or Al seed layers with different thicknesses and crystallinity preliminary exposed to N2 at room temperature. We establish that the stabilization mechanism is chemical in nature: the formation of an N-rich surface layer on the metal seed layers upon exposure to N2 pre-determines the polarity of AlN islands at initial stages of thin film growth while the low energy barrier for the subsequent coalescence of islands of the same polarity contributes to grain growth. These results suggest that the growth of c-axis oriented AlN thin films can be optimized and controlled chemically thus opening more pathways for energy-efficient and controllable AlN thin-film growth processes.

cond-mat.mtrl-sci↗