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Oleg Dogadov

Publications and source records attributed to Oleg Dogadov.

7 recordsLinked to original sources

X-ray driven displacive excitation of coherent phonons

Modulating electron-phonon coupling offers a route to control structural displacements and tune material functionality. Valence-to-conduction band transitions, however, provide limited leverage over the driving force. Here, we demonstrate coherent lattice dynamics in trigonal tellurium using free-electron laser pulses tuned to the Te N4,5-edge. Over a broad fluence range, the oscillation amplitude obeys the displacive excitation of coherent phonons framework, extended to core resonance with twice the driving efficiency of a visible pump. Ab initio calculations decompose the force into competing multiband contributions, inaccessible to optical excitation, whose balance shifts as carriers relax. Tunable extreme-ultraviolet and X-ray pulses thus open a regime in which the displacive response is set by band-dependent coupling to the lattice, not by the number and temperature of the photocarriers alone.

cond-mat.mtrl-sci

Nonequilibrium dynamics of high energy transitions in monolayer WSe$_{2}$

High-energy optical transitions in monolayer transition-metal dichalcogenides exhibit characteristics that are markedly distinct from those of lower-lying band-edge excitons. These differences arise from the involvement of electronic states located at regions of the Brillouin zone that are displaced from the $K$ valleys. In this work, we investigate the ultrafast dynamics of these high-energy excitations by employing broadband ultrafast transient absorption spectroscopy spanning the visible to ultraviolet spectral range. We observe that the formation and relaxation dynamics of one of the high energy transitions display a distinct behavior compared to the lower-energy excitonic resonances, developing on a significantly slower timescale. First-principles calculations of the excitonic landscape allow us to account for this delayed response and attribute it to the phonon-mediated formation of momentum-dark excitons.

cond-mat.mtrl-sci

Excitonic Mott transition without population inversion

Exciton dissociation via the excitonic Mott transition (EMT) governs the high-density optical response of semiconductors and sets fundamental limits for optoelectronic devices. The EMT is conventionally linked to the onset of population inversion and the emergence of optical gain. Here, we demonstrate that this paradigm can break down under ultrafast non-equilibrium excitation. Using femtosecond pump-probe optical spectroscopy, we drive a monolayer transition metal dichalcogenide into a dense photoexcited state in which the excitonic resonance is completely quenched within ~100 fs, while the optical gain is entirely absent across the explored fluence range. State-of-the-art real-time ab initio simulations reveal that the EMT is governed by an interplay of strongly nonthermal carrier populations and nonequilibrium dynamical screening of the Coulomb interaction. The quantitative agreement between theory and experiment identifies a distinct, ultrafast pathway to exciton ionization beyond quasi-equilibrium descriptions and demonstrates that population inversion is not a universal prerequisite for the EMT.

cond-mat.mes-hall

Valleytronics in 2D Materials Roadmap

Valleytronics exploits non-equivalent energy extrema in the electronic band structure of crystalline solids -- the valley degree of freedom -- to encode, manipulate, and read out information. The advent of 2D materials, first graphene and then transition-metal dichalcogenides, made valley control practical through optical, electrical, and magnetic routes. This foundation has enabled remarkable progress in recent years spanning established frontiers, such as valley exciton physics and valley Hall effects, as well as emerging directions including lightwave valleytronics, nanophotonic integration, flat-band valleytronics, and spin-valley qubits. In parallel, there are sustained efforts to scale up valleytronic materials and to predict new valleytronic platforms. This Roadmap brings together perspectives from leading experts to chart the key opportunities and challenges at the forefront of 2D material valleytronics. Each section captures a snapshot of progress in a key research area, identifies critical open challenges, and outlines pathways toward future valleytronics breakthroughs.

cond-mat.mes-hall

Dissecting intervalley coupling mechanisms in monolayer transition metal dichalcogenides

Monolayer (1L) transition metal dichalcogenides (TMDs) provide a unique opportunity to control the valley degree of freedom of optically excited charge carriers due to the spin-valley locking effect. Despite extensive studies of the valley-contrasting physics, stimulated by perspective valleytronic applications, a unified picture of competing intervalley coupling processes in 1L-TMDs is lacking. Here, we apply broadband helicity-resolved transient absorption to explore exciton valley polarization dynamics in 1L-WSe${}_2$. By combining experimental results with microscopic simulations, we dissect individual intervalley coupling mechanisms and reveal the crucial role of phonon-assisted scattering in the fast decay of the A exciton circular dichroism and the formation of the dichroism of opposite polarity for the B exciton. We further provide a consistent description of the valley depolarization driven by the combined action of Coulomb scattering processes and indicate the presence of efficient single spin-flip mechanisms. Our study brings us closer to a complete understanding of exciton dynamics in TMDs.

cond-mat.mes-hall

Photo-generated charge-transfer excitons in NiO revealed by ultrafast time-resolved resonant inelastic x-ray scattering

Strong electronic correlation can lead to insulating behavior and to the opening of large optical gaps, even in materials with partly filled valence shells. Although the non-equilibrium optical response encodes both local (quasi atomic) and collective (long range) responses, optical spectroscopy is usually more sensitive to the latter. Resonant x-ray techniques are better suited to investigate the quasi-atomic properties of correlated solids. Using time-resolved resonant inelastic x-ray scattering (RIXS), here we study the ultrafast non-equilibrium processes in NiO following photo-excitation by ultraviolet photons with energy exceeding the optical gap. We observe the creation of charge-transfer excitons that decay with a time constant of about 2\,ps, while itinerant photo-doping persists for tens of picoseconds. Following our discovery, which establishes time-resolved high-resolution RIXS as a powerful tool for the study of transient phenomena in condensed matter, the possible presence of charge-transfer excitons will need to be considered when interpreting optical pump-probe experiments on correlated quantum materials.

cond-mat.str-el

Time-domain observation of interlayer exciton formation and thermalization in a MoSe$_2$/WSe$_2$ heterostructure

Vertical heterostructures (HS) of transition metal dichalcogenides (TMDs) host interlayer excitons (ILX), with electrons and holes residing in different layers. With respect to their intralayer counterparts, ILX feature much longer lifetimes and diffusion lengths, paving the way to excitonic optoelectronic devices operating at room temperature. While the recombination dynamics of ILX has been intensively studied, the formation process and its underlying physical mechanisms are still largely unexplored. Here we use ultrafast transient absorption spectroscopy with a white-light probe, spanning both intralayer and interlayer exciton resonances, to simultaneously capture and time-resolve interlayer charge transfer and ILX formation dynamics in a MoSe$_2$/WSe$_2$ HS. We find that the ILX formation timescale is nearly an order of magnitude (~1 ps) longer than the interlayer charge transfer time (~100 fs). Microscopic calculations attribute the relative delay to an interplay between a phonon-assisted interlayer exciton cascade and subsequent cooling processes, and excitonic wave-function overlap. Our results provide an explanation to the efficient photocurrent generation observed in optoelectronic devices based on TMD HS, as the ILX have an opportunity to dissociate during their thermalization process.

cond-mat.mtrl-sci