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Oleg Pankratov

Publications and source records attributed to Oleg Pankratov.

15 recordsLinked to original sources
arXiv2011

Time-dependent occupation numbers in reduced-density-matrix functional theory: Application to an interacting Landau-Zener model

We prove that if the two-body terms in the equation of motion for the one-body reduced density matrix are approximated by ground-state functionals, the eigenvalues of the one-body reduced density matrix (occupation numbers) remain constant in time. This deficiency is related to the inability of such an approximation to account for relative phases in the two-body reduced density matrix. We derive an exact differential equation giving the functional dependence of these phases in an interacting Landau-Zener model and study their behavior in short- and long-time regimes. The phases undergo resonances whenever the occupation numbers approach the boundaries of the interval [0,1]. In the long-time regime, the occupation numbers display correlation-induced oscillations and the memory dependence of the functionals assumes a simple form.

cond-mat.str-el↗
arXiv2010

Electron spectrum of epitaxial graphene monolayers

Epitaxial graphene on SiC possesses, quite remarkably, an electron spectrum similar to that of freestanding samples. Yet, the coupling to the substrate, albeit small, affects the quasiparticle properties. Combining \emph{ab initio} calculations with symmetry analysis, we derive a modified Dirac-Weyl Hamiltonian for graphene epilayers. While for the epilayer on the C-face the Dirac cone remains almost intact, for epilayers on the Si-face the band splitting is about 30\,meV. At certain energies, the Dirac bands are significantly distorted by the resonant interaction with interface states, which should lead to mobility suppression, especially on the Si-face.

cond-mat.mtrl-sci↗
arXiv2010

Many body effects in the excitation spectrum of a defect in SiC

We show that electron correlations control the photophysics of defects in SiC through both renormalization of the quasiparticle bandstructure and exciton effects. We consider the carbon vacancy, which is a well-identified defect with two possible excitation channels that involve conduction and valence band states. Corrections to the Kohn-Sham ionization levels are found to strongly depend on the occupation of the defect state. Excitonic effects introduce a red shift of 0.23 eV. The analysis unambigiously re-assigns excitation mechanism at the thresholds in photo-induced paramagnetic resonance measurements [J. Dashdorj \emph{et al.}, J. Appl. Phys. \textbf{104}, 113707 (2008)].

cond-mat.mtrl-sci↗
arXiv2010

Adiabatic approximation in time-dependent reduced-density-matrix functional theory

With the aim of describing real-time electron dynamics, we introduce an adiabatic approximation for the equation of motion of the one-body reduced-density matrix (one-matrix). The eigenvalues of the one-matrix, which represent the occupation numbers of single-particle orbitals, are obtained from the constrained minimization of the instantaneous ground state energy functional rather than from their dynamical equations. To clarify the motivation for this minimization condition, we discuss a sequence of adiabatic energy functionals, each obeying a minimum principle. The performance of the approximation vis-a`-vis nonadiabatic effects is assessed in real-time simulations for a two-site Hubbard model. Due to the presence of Landau-Zener-type transitions, the system evolves into a nonstationary state with persistent oscillations in the observables. The amplitude and phase of the oscillations exhibit resonance behavior both with respect to the strength of the electron-electron interaction and the rate of variation of the external potential. Both types of resonances have the same origin -- the interference of dynamical and scattering phases.

cond-mat.str-el↗
arXiv2009

Kohn-Sham scheme for frequency dependent linear response

We study the Kohn-Sham scheme for the calculation of the steady state linear response to a harmonic perturbation that is turned on adiabatically. Although in general the exact time dependent exchange-correlation potential cannot be expressed as the functional derivative of a universal functional due to the so-called causality paradox, we show that for a harmonic perturbation the exchange-correlation part of the first-order Kohn-Sham potential $v_s^{(1)}(r) \cos(ωt)$ is given by $v_{xc}^{(1)}(r) = δK_{xc}^{(2)}/δn^{(1)}(r)$. $K_{xc}^{(2)}$ is the exchange-correlation part of the second-order quasienergy $K_v^{(2)}$. The Frenkel variation principle implies a stationary principle for the second-order quasienergy. We also find an analogous stationary principle and KS scheme in the time dependent extension of one-matrix functional theory, in which the basic variable is the one-matrix (one-body reduced density matrix).

cond-mat.other↗
arXiv2007

Persistent current and Wigner crystallization in a one dimensional quantum ring

We use Density Functional Theory to study interacting spinless electrons on a one-dimensional quantum ring in the density range where the system undergoes Wigner crystallization. The Wigner transition leads to a drastic ``collective'' electron localization due to the Wigner crystal pinning, provided a weak impurity potential is applied. To reveal this localization we examine a persistent current in a ring penetrated by a magnetic flux. Using the DFT-OEP method we calculated the current as a function of the interaction parameter r_S. We find that in the limit of vanishing impurity potential the persistent current stays constant up to a critical value of r_S^c=2.05 but shows a drastic exponential decay for larger r_S which reflects a formation of a pinned Wigner crystal. Above r_S^c the amplitude of the electron density oscillations exactly follows the (r_S-r_S^c)^{1/2} behaviour, confirming a second-order phase transition as expected in the mean-field-type OEP approximation.

cond-mat.mes-hall↗
arXiv2007

The Kohn-Sham system in one-matrix functional theory

A system of electrons in a local or nonlocal external potential can be studied with 1-matrix functional theory (1MFT), which is similar to density functional theory (DFT) but takes the one-particle reduced density matrix (1-matrix) instead of the density as its basic variable. Within 1MFT, Gilbert derived [PRB 12, 2111 (1975)] effective single-particle equations analogous to the Kohn-Sham (KS) equations in DFT. The self-consistent solution of these 1MFT-KS equations reproduces not only the density of the original electron system but also its 1-matrix. While in DFT it is usually possible to reproduce the density using KS orbitals with integer (0 or 1) occupancy, in 1MFT reproducing the 1-matrix requires in general fractional occupancies. The variational principle implies that the KS eigenvalues of all fractionally occupied orbitals must collapse at self-consistency to a single level, equal to the chemical potential. We show that as a consequence of the degeneracy the iteration of the KS equations is intrinsically divergent. Fortunately, the level shifting method, commonly introduced in Hartree-Fock calculations, is always able to force convergence. We introduce an alternative derivation of the 1MFT-KS equations that allows control of the eigenvalue collapse by constraining the occupancies. As an explicit example, we apply the 1MFT-KS scheme to calculate the ground state 1-matrix of an exactly solvable two-site Hubbard model.

cond-mat.str-el↗
arXiv2007

Ab initio Study of Graphene on SiC

Employing density-functional calculations we study single and double graphene layers on Si- and C-terminated 1x1-6H-SiC surfaces. We show that, in contrast to earlier assumptions, the first carbon layer is covalently bonded to the substrate, and cannot be responsible for the graphene-type electronic spectrum observed experimentally. The characteristic spectrum of free-standing graphene appears with the second carbon layer, which exhibits a weak van der Waals bonding to the underlying structure. For Si-terminated substrate, the interface is metallic, whereas on C-face it is semiconducting or semimetallic for single or double graphene coverage, respectively.

cond-mat.mtrl-sci↗
arXiv2006

Thermally stable carbon-related centers in 6H-SiC: photoluminescence spectra and microscopic models

Recent ab initio calculations [Mattausch et al., Phys. Rev. B 70, 235211 (2004)] of carbon clusters in SiC reveal a possible connection between the tricarbon antisite (C_3)_Si and the U photoluminescence center in 6H-SiC [Evans et al., Phys. Rev. B 66, 35204 (2002)]. Yet, some of the predicted vibrational modes were not observed experimentally. Here we report experiments which indeed confirm the existence of a low-energy mode for the U-center (as well as for the HT3- and HT4-centers with spectral details similar to the U-center). We calculated the isotope splitting for the (C_3)_Si-defect and found near-perfect agreement with our data. In addition, we discuss the carbon di-interstitial (C_2)_Hex as a model for the Z- and HT5-centers. The isotope splitting is also well reproduced, but the absolute values of the local mode energies show a discrepancy of about 10 meV.

cond-mat.mtrl-sci↗
arXiv2004

Structure and vibrational spectra of carbon clusters in SiC

The electronic, structural and vibrational properties of small carbon interstitial and antisite clusters are investigated by ab initio methods in 3C and 4H-SiC. The defects possess sizable dissociation energies and may be formed via condensation of carbon interstitials, e.g. generated in the course of ion implantation. All considered defect complexes possess localized vibrational modes (LVM's) well above the SiC bulk phonon spectrum. In particular, the compact antisite clusters exhibit high-frequency LVM's up to 250meV. The isotope shifts resulting from a_{13}C enrichment are analyzed. In the light of these results, the photoluminescence centers D_{II} and P-U are discussed. The dicarbon antisite is identified as a plausible key ingredient of the D_{II}-center, whereas the carbon split-interstitial is a likely origin of the P-T centers. The comparison of the calculated and observed high-frequency modes suggests that the U-center is also a carbon-antisite based defect.

cond-mat.mtrl-sci↗
arXiv2004

Carbon antisite clusters in SiC: a possible pathway to the D_{II} center

The photoluminescence center D_{II} is a persistent intrinsic defect which is common in all SiC polytypes. Its fingerprints are the characteristic phonon replicas in luminescence spectra. We perform ab-initio calculations of vibrational spectra for various defect complexes and find that carbon antisite clusters exhibit vibrational modes in the frequency range of the D_{II} spectrum. The clusters possess very high binding energies which guarantee their thermal stability--a known feature of the D_{II} center. The di-carbon antisite (C_{2})_{Si} (two carbon atoms sharing a silicon site) is an important building block of these clusters.

cond-mat.mtrl-sci↗
arXiv2003

Annealing mechanisms of intrinsic defects in 3C-SiC: a theoretical study

The annealing kinetics of mobile intrinsic defects is investigated by an ab initio method based on density functional theory. The interstitial-vacancy recombination, the diffusion of vacancies and interstitials to defect sinks (e.g. surfaces or dislocations) as well as the formation of interstitial-clusters are considered. The calculated migration and reaction barriers suggest a hierarchical ordering of competing annealing mechanisms. The higher mobility of carbon and silicon interstitials as compared to the vacancies drives the annealing mechanims at lower temperatures including the vacancy-interstitial recombination and the formation of interstitial carbon clusters. These clusters act as a source for carbon interstials at elevated temperatures. In p-type material we discuss the transformation of the silicon vacancy into the more stable vacancy-antisite complex as an annealing mechanism, which is activated before the vacancy migration. Recent annealing studies of vacancy-related centers in irradiated 3C- and 4H-SiC and semi-insulating 4H-SiC are interpreted in terms of the proposed hierarchy of annealing mechanisms.

cond-mat.mtrl-sci↗
arXiv2003

Ab initio study of the migration of intrinsic defects in 3C-SiC

The diffusion of intrinsic defects in 3C-SiC is studied using an ab initio method based on density functional theory. The vacancies are shown to migrate on their own sublattice. The carbon split-interstitials and the two relevant silicon interstitials, namely the tetrahedrally carbon-coordinated interstitial and the <110>-oriented split-interstitial, are found to be by far more mobile than the vacancies. The metastability of the silicon vacancy, which transforms into a vacancy-antisite complex in p-type and compensated material, kinetically suppresses its contribution to diffusion processes. The role of interstitials and vacancies in the self-diffusion is analyzed. Consequences for the dopant diffusion are qualitatively discussed. Our analysis emphasizes the relevance of mechanisms based on silicon and carbon interstitials.

cond-mat.mtrl-sci↗
arXiv1995

Localized Excitons and Breaking of Chemical Bonds at III-V (110) Surfaces

Electron-hole excitations in the surface bands of GaAs(110) are analyzed using constrained density-functional theory calculations. The results show that Frenkel-type autolocalized excitons are formed. The excitons induce a local surface unrelaxation which results in a strong exciton-exciton attraction and makes complexes of two or three electron-hole pairs more favorable than separate excitons. In such microscopic exciton "droplets" the electron density is mainly concentrated in the dangling orbital of a surface Ga atom whereas the holes are distributed over the bonds of this atom to its As neighbors thus weakening the bonding to the substrate. This finding suggests the microscopic mechanism of a laser-induced emission of neutral Ga atoms from GaAs and GaP (110) surfaces.

mtrl-th↗