arXiv subjects

Oleg Rubel

Publications and source records attributed to Oleg Rubel.

30 records · Page 2Linked to original sources

arXiv2019

Electronic properties of Pb-I deficient lead halide perovskites

The electronic structure evolution of deficient halide perovskites with a general formula $(A,A')_{1+x}M_{1-x}X_{3-x}$ was investigated using the density functional theory. The focus is placed on characterization of changes in the band gap, band alignment, effective mass, and optical properties of deficient perovskites at various concentrations of defects. We uncover unusual electronic properties of the defect corresponding to a $M\!-\!X$ vacancy filled with an $A'$ cation. This defect "repels" electrons and holes producing no trap states and, in moderate quantities ($x\le0.1$), does not hinder charge transport properties of the material. This behavior is rationalized using a confinement model and provides an additional insight to the defect tolerance of halide perovskites.

cond-mat.mtrl-sci↗

arXiv2019

Stability of aziridinium lead iodide perovskite: ring strain and water vulnerability

Recently, an aziridinium lead iodide perovskite was proposed as a possible solar cell absorber material. We investigated the stability of this material using a density-functional theory with an emphasis on the ring strain associated with the three-membered aziridinium cation. It is shown that the aziridinium ring is prone to opening within the PbI$_3$ environment. When exposed to moisture, aziridinium lead iodide can readily react with water. The resultant product will not likely be a stoichiometric lead halide perovskite structure.

cond-mat.mtrl-sci↗

arXiv2019

Unraveling the water degradation mechanism of CH$_3$NH$_3$PbI$_3$

Instability of perovskite photovoltaics is still a topic which is currently under intense debate, especially the role of water environment. Unraveling the mechanism of this instability is urgent to enable practical application of perovskite solar cells. Here, ab initio metadynamics is employed to investigate the initial phase of a dissolution process of CH$_3$NH$_3$PbI$_3$ (MAPbI$_3$) in explicit water. It is found that the initial dissolution of MAPbI$_3$ is a complex multi-step process triggered by the departure of I$^-$ ion from the CH$_3$NH$_3$I-terminated surface. Reconstruction of the free energy landscape indicates a low energy barrier for water dissolution of MAPbI$_3$. In addition, we propose a two-step thermodynamic cycle for MAPbI$_3$ dissolution in water at a finite concentration that renders a spontaneity of the dissolution process. The low energy barrier for the initial dissolution step and the spontaneous nature of MAPbI$_3$ dissolution in water explain why the water immediately destroys pristine MAPbI$_3$. The dissolution thermodynamics of all-inorganic CsPbI$_3$ perovskite is also analyzed for comparison. Hydration enthalpies and entropies of aqueous ions play an important role for the dissolution process. Our findings provide a comprehensive understanding to the current debate on water instability of MAPbI$_3$.

cond-mat.mtrl-sci↗

arXiv2019

Exploration of the bright and dark exciton landscape and fine structure of MoS$_2$ (using G$_0$W$_0$-BSE)

Spectral ordering between dark and bright excitons in transition metal dichalcogenides is of increasing interest for optoelectronic applications. However, little is known about dark exciton energies and their binding energies. We report the exciton landscape including momentum-forbidden dark excitons of MoS$_{2}$ monolayer using single shot GW-Bethe Salpeter equation (G$_{0}$W$_{0}$-BSE) calculations. We find the lowest-energy exciton to be indirect at ($\textrm K'_{v} \rightarrow \textrm K_{c}$) in agreement with recent GdW-BSE calculations [2D Mater. 6, 035003 (2019)]. We also find that by large, dark exciton binding energies ($E_b$) scale with the quasiparticle energies ($E_g$) according to the $E_b/E_g=0.25$ rule. Differences in exciton binding energies are explained using an orbital theory.

cond-mat.mtrl-sci↗

arXiv2019

Bimolecular theory of non-radiative recombination in semiconductors with disorder

The original Shockley-Read-Hall recombination statistics is extended to include recombination of localized excitations. The recombination is treated as a bimolecular process rather than a monomolecular recombination of excitons. The emphasis is placed on an interplay between two distinct channels of radiative recombination (shallow localized states vs extended states) mediated by trapping of photogenerated charge carriers by non-radiative centers. Results of a numerical solution for a given set of parameters are complemented by an approximate analytical expression for the thermal quenching of the photoluminescence intensity in non-degenerate semiconductors derived in the limit of low pump intensities. The merit of a popular double-exponential empirical function for fitting the thermal quenching of the photoluminescence intensity is critically examined.

cond-mat.mtrl-sci↗

arXiv2019

Electronic band structure of nitrogen diluted Ga(PAsN): Formation of the intermediate band, direct and indirect optical transitions, localization of states

The electronic band structure of Ga(PAsN) with a few percent of nitrogen is calculated in the whole composition of Ga(PAs) host using the state-of-the-art density functional methods including the modified Becke-Johnson functional to correctly reproduce the band gap, and band unfolding to reveal the character of the bands within the entire Brillouin zone. As expected, relatively small amounts of nitrogen introduced to Ga(PAs) lead to formation of an intermediate band below the conduction band which is consistent with the band anticrossing model, widely used to describe the electronic band structure of dilute nitrides. However, in this study calculations are performed in the whole Brillouin zone and reveal the significance of correct description of the band structure near the edges of Brillouin zone, especially for indirect band gap P-rich host alloy, which may not be properly captured with simpler models. The theoretical results are compared with experimental studies, confirming their reliability. The influence of nitrogen on the band structure is discussed in terms of application of Ga(PAsN) in optoelectronic devices such as intermediate band solar cells and light emitters. It is found that Ga(PAsN) with low N and As concentration has a band structure suitable for integration in Si tandem solar cells, since the lattice mismatch between Si and Ga(PAsN) is small in this case. Moreover, it is concluded that P-rich Ga(PAsN) alloys with low N concentration have a promising band structure for two colour emitters. Additionally, the effect of nitrogen incorporation on the carrier localization is studied and discussed.

cond-mat.mtrl-sci↗

arXiv2019

Stacking defects in GaP nanowires: Electronic structure and optical properties

Formation of twin boundaries during the growth of semiconductor nanowires is very common. However, the effects of such planar defects on the electronic and optical properties of nanowires are not very well understood. Here, we use a combination of ab initio simulation and experimental techniques to study these effects. Twin boundaries in GaP are shown to act as an atomically-narrow plane of wurtzite phase with a type-I homostructure band alignment. Twin boundaries and stacking faults (wider regions of the wurtzite phase) lead to the introduction of shallow trap states observed in photoluminescence studies. These effects should have a profound impact on the efficiency of nanowire-based devices.

cond-mat.mtrl-sci↗

arXiv2018

Structural dynamics in hybrid halide perovskites: Bulk Rashba splitting, spin texture, and carrier localization

The extended carrier lifetime in hybrid halide perovskites was attributed to a quasi-indirect band gap that arises due to Rashba splitting in both conduction and valence band edges. In this paper, we present results for an effective relativistic band structure of (CH3NH3)PbI3 with the focus on the dispersion of electronic states near the band edges of (CH3NH3)PbI3 affected by thermal structural fluctuations. We establish a relation between the magnitude of Rashba splitting and a deviation of Pb-atom from its centrosymmetric site position in the PbI6 octahedron. For the splitting energy to reach the thermal energy kT~26 meV (room temperature), the displacement should be of the order 0.3 Ang, which is far above the static displacements of Pb-atoms in the tetragonal phase of (CH3NH3)PbI3. The significant dynamic enhancement of the Rashba splitting observed at earlier simulation times (less than 2 ps) later weakens and becomes less than the thermal energy despite the average displacement of Pb-atoms remaining large (0.37 Ang). It is randomization of Pb-displacement vectors and associated cancelation of the net effective magnetic field acting on electrons at the conduction band edge is responsible for reduction of the Rashba splitting. The lattice dynamics also leads to deterioration of Bloch character for states in the valence band leading to subsequent localization of holes, which affects bipolar mobility of charge carriers in (CH3NH3)PbI3. These results call into question the quasi-indirect band gap as a reason for the long carrier lifetime observed in (CH3NH3)PbI3 at room temperature. An alternative mechanism involves dynamic localization of holes and their reduced overlap with electrons in reciprocal space.

cond-mat.mtrl-sci↗

arXiv2018

Adsorption of maleic acid monomer on the surface of hydroxyapatite and TiO2: a pathway toward biomaterial composites

Poly(styrene-alt-maleic acid) adsorption on hydroxyapatite and TiO2 (rutile) was studied using experimental techniques and complemented by \textit{ab initio} simulations of adsorption of a maleic acid segment as a subunit of the copolymer. Ab initio calculations suggest that the maleic acid segment forms a strong covalent bonding to the TiO2 and hydroxyapatite surfaces. If compared to vacuum, the presence of a solvent significantly reduces the adsorption strength as the polarity of the solvent increases. The results of first-principle calculations are confirmed by the experimental measurements. We found that adsorbed poly(styrene-alt-maleic acid) allowed efficient dispersion of rutile and formation of films by the electrophoretic deposition. Moreover, rutile can be co-dispersed and co-deposited with hydroxyapatite to form composite films. The coatings showed an enhanced corrosion protection of metallic implants in simulated body fluid solutions, which opens new avenues for the synthesis, dispersion, and colloidal processing of advanced composite materials for biomedical applications.

physics.chem-ph↗

arXiv2017

Aziridinium lead iodide: a stable, low bandgap hybrid halide perovskite for photovoltaics

The low ionization energy of an $A$ site molecule is a very important factor, which determines the thermodynamical stability of $A$PbI$_3$ hybrid halide perovskites, while the size of the molecule governs the stable phase at room temperature and, eventually, the bandgap. It is challenging to achieve both a low ionization energy and the reasonable size for the PbI$_3$ cage to circumvent the stability issue inherent to hybrid halide perovskites. Here we propose a new three-membered charged ring radical, which demonstrates a low ionization energy that renders a good stability for its corresponding perovskite and a reasonable cation size that translates into a suitable bandgap for the photovoltaic application. We use ab initio calculations to evaluate a polymorphism of the crystal structure of the proposed halide hybrid perovskite, its stability and electronic properties in comparison to the mainstream perovskites, such as the methylammonium and formamidinium lead iodide. Our results highlight the importance of van der Waals interactions for predicting a correct polymorphism of the perovskite vs hexagonal crystal structure.

cond-mat.mtrl-sci↗

arXiv2016

Ionization energy as a stability criterion for halide perovskites

Instability of hybrid organic-inorganic halide perovskites hinders their development for photovoltaic applications. First-principle calculations are used for evaluation of a decomposition reaction enthalpy of hybrid halide perovskites, which is linked to experimentally observed degradation of device characteristics. However, simple criteria for predicting stability of halide perovskites are lacking since Goldschmidt's tolerance and octahedral geometrical factors do not fully capture formability of those perovskites. In this paper, we extend the Born-Haber cycle to partition the reaction enthalpy of various perovskite structures into lattice, ionization, and molecularization energy components. The analysis of various contributions to the reaction enthalpy points to an ionization energy of a molecule and a cage as an additional criterion for predicting chemical trends in stability of hybrid halide perovskites. Prospects of finding new perovskite structures with improved chemical stability aimed for photovoltaic applications are discussed.

cond-mat.mtrl-sci↗

arXiv2016

Configuration Dependence of Band Gap Narrowing and Localization in Dilute GaAs_{1-x} Bi_x Alloys

Anion substitution with bismuth (Bi) in III-V semiconductors is an effective method for experimental engineering of the band gap Eg at low Bi concentrations, in particular in gallium arsenide (GaAs). The inverse Bi-concentration dependence of Eg has been found to be linear at low concentrations x and dominated by a valence band-defect level anticrossing between As and Bi occupied p levels. This dependence breaks down at high concentrations where empirical models accounting only for the As-Bi interaction are not applicable. Predictive models for the valence band hybridization require a first-principle understanding which can be obtained by density functional theory with the main challenges being the proper description of Eg and the spin-orbit coupling. By using an efficient method to include these effects, it is shown here that at high concentrations Eg is modified mainly by a Bi-Bi p orbital interaction and by the large Bi atom-induced strain. This points to the role of different atomic configurations obtained by varying the experimental growth conditions in engineering arsenide band gaps, in particular for telecommunication laser technology.

cond-mat.mtrl-sci↗