arXiv subjects

Oleg Shpyrko

Publications and source records attributed to Oleg Shpyrko.

At least 19 recordsLinked to original sources

arXiv2026

Dynamic nanoscale spatial heterogeneity in a perovskite to brownmillerite topotactic phase transformation

Phase transitions are omnipresent in modern condensed matter physics and its applications. In solids, first-order phase transformations typically occur by nucleation and growth under non-equilibrium conditions. Under constant external conditions, $\textit{e.g.}$, constant annealing temperature and pressure, the nucleation and growth dynamics are often thought of as spatially and temporally independent. Here, $\textit{in-situ}$ Bragg X-ray photon correlation spectroscopy (XPCS) reveals nanoscale spatial and dynamical heterogeneity in the perovskite-to-brownmillerite topotactic phase transformation in La$_{0.7}$Sr$_{0.3}$CoO$_3$ thin films annealed under constant reducing conditions over a time span of multiple hours. Specifically, a timescale associated with domain growth remains stable, with a corresponding domain wall speed of $v_d = 6 \pm 0.5 \times10^{-4}$~nm/s ($2 \pm 0.2$~nm/h), while a slower timescale, associated with temperature-driven de-pinning of domains, leads to accelerating dynamics with timescales following an aging power law with exponent -2.2$\pm$0.5. This experiment demonstrates that Bragg XPCS is a powerful tool to study nanoscale dynamics in structural phase transformations, with the ability to extract quantitative average values related to nano-domain motion $\textit{in-situ}$. The results are relevant for phase engineering of phase-change devices, as they show that nanoscale dynamics, linked to domain and domain-wall motion, can continuously evolve and speed up with time, even hours after the initiation of the phase transformation, with potential repercussions on electrical performance.

cond-mat.mtrl-sci↗

arXiv2026

Low-Temperature Suppression of Intertwined Orders in La$_{1/3}$Sr$_{2/3}$FeO$_{3}$ Thin Films

The strong coupling between spin, charge, and lattice degrees of freedom in perovskite oxides leads to an array of exotic phenomena, giving these materials rich phase diagrams that can include coupled orders. This is exemplified by the A-site doped ferrite La$_{1/3}$Sr$_{2/3}$FeO$_{3}$ (LSFO), which exhibits a coupled paramagnetic-antiferromagnetic and charge ordering phase transition at $\sim$190 K that has been well studied in thin films, bulk, and polycrystalline samples. However, the low temperature behavior of LSFO thin films below $\sim$100 K has not been thoroughly explored. This work uses several X-ray scattering and spectroscopy techniques to directly probe LSFO's magnetic and charge order down to low temperature. Using resonant X-ray scattering, we observe a complete suppression of LSFO's known antiferromagnetic and charge order below $\sim$25 K. Further spectroscopy and coherent scattering measurements provide insight into LSFO's electronic structure and domain dynamics in this new low temperature phase, and we propose possible explanations for the observed order suppression based on reduced dimensionality of domains in our thin films. Our findings provide insight into the effects of competing interactions in strongly correlated materials, particularly those with coupled orders.

cond-mat.str-el↗

arXiv2026

Jamming-controlled stochasticity in metal-insulator switching

Understanding and controlling phase transitions is a fundamental part of physics and has been central to many technological revolutions, from steam engines to field-effect transistors. At present, there is strong interest in materials with strongly coupled structural and electronic phase transitions, which hold promise for energy-efficient technologies. Utilizing a structural phase transition and controlling its plasticity naturally leads to built-in memory, a key feature for emulating neurons and synapses in neuromorphic technologies. Here, $\textit{operando}$ Bragg X-ray photon correlation spectroscopy is used to study the evolution of the nano-domain distribution at the micron-scale in neuromorphic devices made from the archetypal Mott insulator vanadium dioxide. It is found that after electrical switching, slow nano-domain reconfiguration occurs on timescales of thousands of seconds and that the domains undergo a jamming transition, offering control over switching stochasticity at the micron scale. More precisely, repetitive above-threshold currents plastically drive the system into a jammed/glassy state where switching becomes deterministic, while sub-threshold currents erase the short-term memory contained in the nano-domain distribution, recovering stochastic switching, thus offering a path for in-device learning. The results illustrate the importance of studying the nanoscale physics associated with phase transitions in strongly correlated materials, even for macroscopic devices, and offer guidance for future device operation schemes.

cond-mat.mes-hall↗

arXiv2025

Self-strain suppression of the metal-to-insulator transition in phase-change oxide devices

Quantum materials exhibiting phase transitions which can be controlled through external stimuli, such as electric fields, are promising for future computing technologies beyond conventional semiconductor transistors. Devices that take advantage of structural phase transitions have inherent built-in memory, reminiscent of synapses and neurons, and are thus natural candidates for neuromorphic computing. Of particular interest are phase-change oxides, which allow for control over the metal-to-insulator transition. Here, we report X-ray nano-diffraction structural imaging of micro-devices fabricated with the archetypal phase-change material vanadium sesquioxide (V$_2$O$_3$). The devices contain a Ga ion-irradiated region where the metal-to-insulator transition critical temperature is lowered, a useful feature for controlling neuron-like spiking behavior. Results show that strain, induced by crystal lattice mismatch between the pristine and irradiated material, leads to a suppression of the metal-to-insulator-transition. Suppression occurs within the irradiated region or along its edges, depending on the defect-distribution and the size of the region. The observed self-straining effect could extend to other phase-change oxides and dominate as device dimensions are reduced and become too small to dissipate strain within the irradiated region. The findings are important for phase engineering in phase-change devices and highlight the necessity to study phase transitions at the nanoscale.

cond-mat.mes-hall↗

arXiv2024

The sounds of science a symphony for many instruments and voices part II

Despite its amazing quantitative successes and contributions to revolutionary technologies, physics currently faces many unsolved mysteries ranging from the meaning of quantum mechanics to the nature of the dark energy that will determine the future of the Universe. It is clearly prohibitive for the general reader, and even the best informed physicists, to follow the vast number of technical papers published in the thousands of specialized journals. For this reason, we have asked the leading experts across many of the most important areas of physics to summarise their global assessment of some of the most important issues. In lieu of an extremely long abstract summarising the contents, we invite the reader to look at the section headings and their authors, and then to indulge in a feast of stimulating topics spanning the current frontiers of fundamental physics from The Future of Physics by William D Phillips and What characterises topological effects in physics? by Gerard t Hooft through the contributions of the widest imaginable range of world leaders in their respective areas. This paper is presented as a preface to exciting developments by senior and young scientists in the years that lie ahead, and a complement to the less authoritative popular accounts by journalists.

physics.soc-ph↗

arXiv2024

Real time 3D coherent X-ray diffraction imaging

Coherent X-ray Diffraction Imaging (CXDI) technique offers unique insights into the nanoscale world, enabling the reconstruction of 3D structures with a nanoscale resolution achieved through computational phase reconstruction from measured scattered intensity maps. Computational demands of 3D CXDI, however, limit its real-time application in experimental settings. This work presents a carousel phase retrieval algorithm (CPRA) that enables the real-time, high-resolution reconstruction of computationally complex 3D objects. CPRA is based on representing the 3D reconstruction problem as a set of 2D reconstructions of projected images corresponding to different experimentally collected angles via the Fourier slice theorem. Consistency between the 2D reconstructed images is based on an iterative procedure, in which each 2D reconstruction accounts for the adjacent 2D reconstructed images in a periodic (carousel) manner. Demonstrations on complex systems, including a lithium-rich layered oxide particle and a Staphylococcus aureus biological cell, demonstrate that CPRA significantly enhances the reconstruction quality and enables the reconstruction process to be completed in real time during experiment.

physics.comp-ph↗

arXiv2023

Operando real-space imaging of a structural phase transformation in a high-voltage electrode

Discontinuous solid-solid phase transformations play a pivotal role in determining properties of rechargeable battery electrodes. By leveraging operando Bragg Coherent Diffractive Imaging (BCDI), we investigate the discontinuous phase transformation in LixNi0.5Mn1.5O4 within a fully operational battery. Throughout Li-intercalation, we directly observe the nucleation and growth of the Li-rich phase within the initially charged Li-poor phase in a 500 nm particle. Supported by the microelasticity model, the operando imaging unveils an evolution from a curved coherent to planar semi-coherent interface driven by dislocation dynamics. We hypothesize these dislocations exhibit a glissile motion that facilitates interface migration without diffusion of host ions, leaving the particle defect-free post-transformation. Our data indicates negligible kinetic limitations impacting the transformation kinetics, even at discharge rates as fast as C/2. This study underscores BCDI's capability to provide operando insights into nanoscale phase transformations, offering valuable guidance for electrochemical materials design and optimization.

cond-mat.mtrl-sci↗

arXiv2023

High-Resolution Full-field Structural Microscopy of the Voltage Induced Filament Formation in Neuromorphic Devices

Neuromorphic functionalities in memristive devices are commonly associated with the ability to electrically create local conductive pathways by resistive switching. The archetypal correlated material, VO2, has been intensively studied for its complex electronic and structural phase transition as well as its filament formation under applied voltages. Local structural studies of the filament behavior are often limited due to time-consuming rastering which makes impractical many experiments aimed at investigating large spatial areas or temporal dynamics associated with the electrical triggering of the phase transition. Utilizing Dark Field X-ray Microscopy (DFXM), a novel full-field x-ray imaging technique, we study this complex filament formation process in-operando in VO2 devices from a structural perspective. We show that prior to filament formation, there is a significant gain of the metallic rutile phase beneath the metal electrodes that define the device. We observed that the filament formation follows a preferential path determined by the nucleation sites within the device. These nucleation sites are predisposed to the phase transition and can persistently maintain the high-temperature rutile phase even after returning to room temperature, which can enable a novel training/learning mechanism. Filament formation also appears to follow a preferential path determined by a nucleation site within the device which is predisposed to the rutile transition even after returning to room temperature. Finally, we found that small isolated low-temperature phase clusters can be present inside the high-temperature filaments indicating that the filament structure is not uniform. Our results provide a unique perspective on the electrically induced filament formation in metal-insulator transition materials, which further the basic understanding of this resistive switching.

physics.app-ph↗

arXiv2023

Picosecond volume expansion drives a later-time insulator-metal transition in a nano-textured Mott Insulator

Technology moves towards ever faster switching between different electronic and magnetic states of matter. Manipulating properties at terahertz rates requires accessing the intrinsic timescales of electrons (femtoseconds) and associated phonons (10s of femtoseconds to few picoseconds), which is possible with short-pulse photoexcitation. Yet, in many Mott insulators, the electronic transition is accompanied by the nucleation and growth of percolating domains of the changed lattice structure, leading to empirical time scales dominated by slow coarsening dynamics. Here, we use time-resolved X-ray diffraction and reflectivity measurements to investigate the photoinduced insulator-to-metal transition in an epitaxially strained thin film Mott insulator Ca2RuO4. The dynamical transition occurs without observable domain formation and coarsening effects, allowing the study of the intrinsic electronic and lattice dynamics. Above a fluence threshold, the initial electronic excitation drives a fast lattice rearrangement, followed by a slower electronic evolution into a metastable non-equilibrium state. Microscopic calculations based on time-dependent dynamical mean-field theory and semiclassical lattice dynamics within a recently published equilibrium energy landscape picture explain the threshold-behavior and elucidate the delayed onset of the electronic phase transition in terms of kinematic constraints on recombination. Analysis of satellite scattering peaks indicates the persistence of a strain-induced nano-texture in the photoexcited film. This work highlights the importance of combined electronic and structural studies to unravel the physics of dynamic transitions and elucidates the role of strain in tuning the timescales of photoinduced processes.

cond-mat.str-el↗

arXiv2022

Ultrafast perturbation of magnetic domains by optical pumping in a ferromagnetic multilayer

Ultrafast optical pumping of spatially nonuniform magnetic textures is known to induce far-from-equilibrium spin transport effects. Here, we use ultrafast x-ray diffraction with unprecedented dynamic range to study the laser-induced dynamics of labyrinth domain networks in ferromagnetic CoFe/Ni multilayers. We detected azimuthally isotropic, odd order, magnetic diffraction rings up to 5th order. The amplitudes of all three diffraction rings quench to different degrees within 1.6 ps. In addition, all three of the detected diffraction rings both broaden by 15% and radially contract by 6% during the quench process. We are able to rigorously quantify a 31% ultrafast broadening of the domain walls via Fourier analysis of the order-dependent quenching of the three detected diffraction rings. The broadening of the diffraction rings is interpreted as a reduction in the domain coherence length, but the shift in the ring radius, while unambiguous in its occurrence, remains unexplained. In particular, we demonstrate that a radial shift explained by domain wall broadening can be ruled out. With the unprecedented dynamic range of our data, our results provide convincing evidence that labyrinth domain structures are spatially perturbed at ultrafast speeds under far-from-equilibrium conditions, albeit the mechanism inducing the perturbations remains yet to be clarified.

cond-mat.mes-hall↗

arXiv2022

Quantum materials for energy-efficient neuromorphic computing

Neuromorphic computing approaches become increasingly important as we address future needs for efficiently processing massive amounts of data. The unique attributes of quantum materials can help address these needs by enabling new energy-efficient device concepts that implement neuromorphic ideas at the hardware level. In particular, strong correlations give rise to highly non-linear responses, such as conductive phase transitions that can be harnessed for short and long-term plasticity. Similarly, magnetization dynamics are strongly non-linear and can be utilized for data classification. This paper discusses select examples of these approaches, and provides a perspective for the current opportunities and challenges for assembling quantum-material-based devices for neuromorphic functionalities into larger emergent complex network systems.

cs.ET↗

arXiv2020

A hybrid optoelectronic Mott insulator

The coupling of electronic degrees of freedom in materials to create hybridized functionalities is a holy grail of modern condensed matter physics that may produce novel mechanisms of control. Correlated electron systems often exhibit coupled degrees of freedom with a high degree of tunability which sometimes lead to hybridized functionalities based on external stimuli. However, the mechanisms of tunability and the sensitivity to external stimuli are determined by intrinsic material properties which are not always controllable. A Mott metal-insulator transition, which is technologically attractive due to the large changes in resistance, can be tuned by doping, strain, electric fields, and orbital occupancy but cannot be, in and of itself, controlled externally with light. Here we present a new approach to produce hybridized functionalities using a properly engineered photoconductor/strongly-correlated hybrid heterostructure, showing control of the Metal-to-Insulator transition (MIT) using optical means. This approach combines a photoconductor, which does not exhibit an MIT, with a strongly correlated oxide, which is not photoconducting. Due to the close proximity between the two materials, the heterostructure exhibits large volatile and nonvolatile, photoinduced resistivity changes and substantial photoinduced shifts in the MIT transition temperatures. This approach can potentially be extended to other judiciously chosen combinations of strongly correlated materials with systems which exhibit optically, electrically or magnetically controllable behavior.

physics.app-ph↗

arXiv2019

Scientific Opportunities with an X-ray Free-Electron Laser Oscillator

An X-ray free-electron laser oscillator (XFELO) is a new type of hard X-ray source that would produce fully coherent pulses with meV bandwidth and stable intensity. The XFELO complements existing sources based on self-amplified spontaneous emission (SASE) from high-gain X-ray free-electron lasers (XFEL) that produce ultra-short pulses with broad-band chaotic spectra. This report is based on discussions of scientific opportunities enabled by an XFELO during a workshop held at SLAC on June 29 - July 1, 2016

physics.ins-det↗

arXiv2004

Surface oxidation of liquid Sn

We report the results of an x-ray scattering study that reveals oxidation kinetics and formation of a previously unreported crystalline phase of SnO at the liquid-vapour interface of Sn. Our experiments reveal that the pure liquid Sn surface does not react with molecular oxygen below an activation pressure of \~5.0*10-6 Torr. Above that pressure a rough solid Sn oxide grows over the liquid metal surface. Once the activation pressure has been exceeded the oxidation proceeds at pressures below the oxidation pressure threshold. The observed diffraction pattern associated with the surface oxidation does not match any of the known Sn oxide phases. The data have an explicit signature of the face-centred cubic structure, however it requires lattice parameters that are about 9% smaller than those reported for cubic structures of high-pressure phases of Sn oxides. Keywords: X-ray scattering, diffraction, and reflection; Oxidation; Surface chemical reaction; Surface structure, morphology, roughness, and topography; Tin; Tin oxides; Liquid surfaces; Polycrystalline thin films

cond-mat.mtrl-sci↗

arXiv2004

Wetting Phase Transition at the Surface of Liquid Ga-Bi alloys: An X-ray Reflectivity Study

X-ray reflectivity measurements of the binary liquid Ga-Bi alloy reveal a dramatically different surface structure above and below the monotectic temperature $T_{mono}=222^{\circ}$ C. A Gibbs-adsorbed Bi monolayer resides at the surface at both regimes. However, a 30 Å thick, Bi-rich wetting film intrudes between the Bi monolayer and the Ga-rich bulk for $T > T_{mono}$. The internal structure of the wetting film is determined with Å resolution, showing a theoretically unexpected concentration gradient and a highly diffuse interface with the bulk phase.

cond-mat.stat-mech↗

arXiv2004

Wetting behavior at the free surface of a liquid gallium-bismuth alloy: An X-ray reflectivity study close to the bulk monotectic point

We present x-ray reflectivity measurements from the free surface of a liquid gallium-bismuth alloy (Ga-Bi) in the temperature range close to the bulk monotectic temperature $T_{mono} = 222$C. Our measurements indicate a continuous formation of a thick wetting film at the free surface of the binary system driven by the first order transition in the bulk at the monotectic point. We show that the behavior observed is that of a complete wetting at a tetra point of solid-liquid-liquid-vapor coexistance.

cond-mat.stat-mech↗

arXiv2004

Microscopic View on Short-Range Wetting at the Free Surface of the Binary Metallic Liquid Gallium-Bismuth: An X-ray Reflectivity and Square Gradient Theory Study

We present an x-ray reflectivity study of wetting at the free surface of the binary liquid metal gallium-bismuth (Ga-Bi) in the region where the bulk phase separates into Bi-rich and Ga-rich liquid phases. The measurements reveal the evolution of the microscopic structure of wetting films of the Bi-rich, low-surface-tension phase along different paths in the bulk phase diagram. A balance between the surface potential preferring the Bi-rich phase and the gravitational potential which favors the Ga-rich phase at the surface pins the interface of the two demixed liquid metallic phases close to the free surface. This enables us to resolve it on an Angstrom level and to apply a mean-field, square gradient model extended by thermally activated capillary waves as dominant thermal fluctuations. The sole free parameter of the gradient model, i.e. the so-called influence parameter, $κ$, is determined from our measurements. Relying on a calculation of the liquid/liquid interfacial tension that makes it possible to distinguish between intrinsic and capillary wave contributions to the interfacial structure we estimate that fluctuations affect the observed short-range, complete wetting phenomena only marginally. A critical wetting transition that should be sensitive to thermal fluctuations seems to be absent in this binary metallic alloy.

cond-mat.stat-mech↗

arXiv2004

Surface Structure of Liquid Metals and the Effect of Capillary Waves: X-ray Studies on Liquid Indium

We report x-ray reflectivity (XR) and small angle off-specular diffuse scattering (DS) measurements from the surface of liquid Indium close to its melting point of $156^\circ$C. From the XR measurements we extract the surface structure factor convolved with fluctuations in the height of the liquid surface. We present a model to describe DS that takes into account the surface structure factor, thermally excited capillary waves and the experimental resolution. The experimentally determined DS follows this model with no adjustable parameters, allowing the surface structure factor to be deconvolved from the thermally excited height fluctuations. The resulting local electron density profile displays exponentially decaying surface induced layering similar to that previously reported for Ga and Hg. We compare the details of the local electron density profiles of liquid In, which is a nearly free electron metal, and liquid Ga, which is considerably more covalent and shows directional bonding in the melt. The oscillatory density profiles have comparable amplitudes in both metals, but surface layering decays over a length scale of $3.5\pm 0.6$ Åfor In and $5.5\pm 0.4$ Åfor Ga. Upon controlled exposure to oxygen, no oxide monolayer is formed on the liquid In surface, unlike the passivating film formed on liquid Gallium.

cond-mat.mtrl-sci↗