arXiv subjects

Oleg V. Yazyev

Publications and source records attributed to Oleg V. Yazyev.

At least 109 records · Page 6Linked to original sources

arXiv2014

Electronic Transport in Graphene with Aggregated Hydrogen Adatoms

Hydrogen adatoms and other species covalently bound to graphene act as resonant scattering centers affecting the electronic transport properties and inducing Anderson localization. We show that attractive interactions between adatoms on graphene and their diffusion mobility strongly modify the spatial distribution, thus fully eliminating isolated adatoms and increasing the population of larger size adatom aggregates. Our scaling analysis shows that such aggregation of adatoms increases conductance by up to several orders of magnitude and results in significant extension of the Anderson localization length in the strong localization regime. We introduce a simple definition of the effective adatom concentration $x^\star$ , which describes the transport properties of both random and correlated distributions of hydrogen adatoms on graphene across a broad range of concentrations.

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arXiv2013

Topological Aspects of Charge-Carrier Transmission across Grain Boundaries in Graphene

We systematically investigate the transmission of charge carriers across the grain-boundary defects in polycrystalline graphene by means of the Landauer-Büttiker formalism within the tight-binding approximation. Calculations reveal a strong suppression of transmission at low energies upon decreasing the density of dislocations with the smallest Burger's vector ${\mathbf b}=(1,0)$. The observed transport anomaly is explained from the point of view of back-scattering due to localized states of topological origin. These states are related to the gauge field associated with all dislocations characterized by ${\mathbf b}=(n,m)$ with $n-m \neq 3q$ ($q \in \mathbb{Z}$). Our work identifies an important source of charge-carrier scattering caused by topological defects present in large-area graphene samples produced by chemical vapor deposition.

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arXiv2013

Engineering Quantum Spin Hall Effect in Graphene Nanoribbons via Edge Functionalization

Kane and Mele predicted that in presence of spin-orbit interaction graphene realizes the quantum spin Hall state. However, exceptionally weak intrinsic spin-orbit splitting in graphene ($\approx 10^{-5}$ eV) inhibits experimental observation of this topological insulating phase. To circumvent this problem, we propose a novel approach towards controlling spin-orbit interactions in graphene by means of covalent functionalization of graphene edges with functional groups containing heavy elements. Proof-of-concept first-principles calculations show that very strong spin-orbit coupling can be induced in realistic models of narrow graphene nanoribbons with tellurium-terminated edges. We demonstrate that electronic bands with strong Rashba splitting as well as the quantum spin Hall state spanning broad energy ranges can be realized in such systems. Our work thus opens up new horizons towards engineering topological electronic phases in nanostructures based on graphene and other materials by means of locally introduced spin-orbit interactions.

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arXiv2013

A Guide to the Design of Electronic Properties of Graphene Nanoribbons

Graphene nanoribbons (GNRs) are one-dimensional nanostructures predicted to display a rich variety of electronic behaviors. Depending on their structure, GNRs realize metallic and semiconducting electronic structures with band gaps that can be tuned across broad ranges. Certain GNRs also exhibit a peculiar gapped magnetic phase for which the half-metallic state can be induced as well as the topologically non-trivial quantum spin Hall electronic phase. Because their electronic properties are highly tunable, GNRs have quickly become a popular subject of research toward the design of graphene-based nanostructures for technological applications. This Account presents a pedagogical overview of the various degrees of freedom in the atomic structure and interactions that researchers can use to tailor the electronic structure of these materials. The Account provides a broad picture of relevant physical concepts that would facilitate the rational design of GNRs with desired electronic properties through synthetic techniques.

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arXiv2013

Experimentally Engineering the Edge Termination of Graphene Nanoribbons

The edges of graphene nanoribbons (GNRs) have attracted much interest due to their potentially strong influence on GNR electronic and magnetic properties. Here we report the ability to engineer the microscopic edge termination of high quality GNRs via hydrogen plasma etching. Using a combination of high-resolution scanning tunneling microscopy and first-principles calculations, we have determined the exact atomic structure of plasma-etched GNR edges and established the chemical nature of terminating functional groups for zigzag, armchair and chiral edge orientations. We find that the edges of hydrogen-plasma-etched GNRs are generally flat, free of structural reconstructions and are terminated by hydrogen atoms with no rehybridization of the outermost carbon edge atoms. Both zigzag and chiral edges show the presence of edge states.

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arXiv2012

Controlling edge states in the Kane-Mele model via edge chirality

We investigate the dependence of band dispersion of the quantum spin Hall effect (QSHE) edge states in the Kane-Mele model on crystallographic orientation of the edges. Band structures of the one-dimensional honeycomb lattice ribbons show the presence of the QSHE edge states at all orientations of the edges given sufficiently strong spin-orbit interactions. We find that the Fermi velocities of the QSHE edge-state bands increase monotonically when the edge orientation changes from zigzag (chirality angle $θ= 0^\circ$) to armchair ($θ= 30^\circ$). We propose a simple analytical model to explain the numerical results.

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arXiv2011

Quasiparticle Effects in the Bulk and Surface-State Bands of Bi2Se3 and Bi2Te3 Topological Insulators

We investigate the bulk band structures and the surface states of Bi2Se3 and Bi2Te3 topological insulators using first-principles many-body perturbation theory based on the GW approximation. The quasiparticle self-energy corrections introduce significant changes to the bulk band structures, while their effect on the band gaps is opposite in the band-inversion regime compared to the usual situation without band inversion. Parametrized "scissors operators" derived from the bulk studies are then used to investigate the electronic structure of slab models which exhibit topologically protected surface states. The results including self-energy corrections reveal significant shifts of the Dirac points relative to the bulk bands and large gap openings resulting from the interactions between the surface states across the thin slab, both in agreement with experimental data.

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arXiv2011

Theory of Magnetic Edge States in Chiral Graphene Nanoribbons

Using a model Hamiltonian approach including electron-electron interactions, we systematically investigate the electronic structure and magnetic properties of chiral graphene nanoribbons. We show that the presence of magnetic edge states is an intrinsic feature of smooth graphene nanoribbons with chiral edges, and discover a number of structure-property relations. Specifically, we study the dependence of magnetic moments and edge-state energy splittings on the nanoribbon width and chiral angle as well as the role of environmental screening effects. Our results address a recent experimental observation of signatures of magnetic ordering in chiral graphene nanoribbons and provide an avenue towards tuning their properties via the structural and environmental degrees of freedom.

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arXiv2011

Spatially Resolving Spin-split Edge States of Chiral Graphene Nanoribbons

A central question in the field of graphene-related research is how graphene behaves when it is patterned at the nanometer scale with different edge geometries. Perhaps the most fundamental shape relevant to this question is the graphene nanoribbon (GNR), a narrow strip of graphene that can have different chirality depending on the angle at which it is cut. Such GNRs have been predicted to exhibit a wide range of behaviour (depending on their chirality and width) that includes tunable energy gaps and the presence of unique one-dimensional (1D) edge states with unusual magnetic structure. Most GNRs explored experimentally up to now have been characterized via electrical conductivity, leaving the critical relationship between electronic structure and local atomic geometry unclear (especially at edges). Here we present a sub-nm-resolved scanning tunnelling microscopy (STM) and spectroscopy (STS) study of GNRs that allows us to examine how GNR electronic structure depends on the chirality of atomically well-defined GNR edges. The GNRs used here were chemically synthesized via carbon nanotube (CNT) unzipping methods that allow flexible variation of GNR width, length, chirality, and substrate. Our STS measurements reveal the presence of 1D GNR edge states whose spatial characteristics closely match theoretical expectations for GNR's of similar width and chirality. We observe width-dependent splitting in the GNR edge state energy bands, providing compelling evidence of their magnetic nature. These results confirm the novel electronic behaviour predicted for GNRs with atomically clean edges, and thus open the door to a whole new area of applications exploiting the unique magnetoelectronic properties of chiral GNRs.

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arXiv2010

Spin Polarization and Transport of Surface States in the Topological Insulators Bi2Se3 and Bi2Te3 from First Principles

We investigate the band dispersion and the spin texture of topologically protected surface states in the bulk topological insulators Bi2Se3 and Bi2Te3 by first-principles methods. Strong spin-orbit entanglement in these materials reduces the spin-polarization of the surface states to ~50% in both cases; this reduction is absent in simple models but of important implications to essentially any spintronic application. We propose a way of controlling the magnitude of spin polarization associated with a charge current in thin films of topological insulators by means of an external electric field. The proposed dual-gate device configuration provides new possibilities for electrical control of spin.

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arXiv2010

Electronic transport in polycrystalline graphene

Most materials in available macroscopic quantities are polycrystalline. Graphene, a recently discovered two-dimensional form of carbon with strong potential for replacing silicon in future electronics, is no exception. There is growing evidence of the polycrystalline nature of graphene samples obtained using various techniques. Grain boundaries, intrinsic topological defects of polycrystalline materials, are expected to dramatically alter the electronic transport in graphene. Here, we develop a theory of charge carrier transmission through grain boundaries composed of a periodic array of dislocations in graphene based on the momentum conservation principle. Depending on the grain boundary structure we find two distinct transport behaviours - either high transparency, or perfect reflection of charge carriers over remarkably large energy ranges. First-principles quantum transport calculations are used to verify and further investigate this striking behaviour. Our study sheds light on the transport properties of large-area graphene samples. Furthermore, purposeful engineering of periodic grain boundaries with tunable transport gaps would allow for controlling charge currents without the need of introducing bulk band gaps in otherwise semimetallic graphene. The proposed approach can be regarded as a means towards building practical graphene electronics.

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arXiv2010

Metal adatoms on graphene and hexagonal boron nitride: Towards the rational design of self-assembly templates

Periodically corrugated epitaxial graphene and hexagonal boron nitride (h-BN) on metallic substrates are considered as perspective templates for the self-assembly of nanoparticles arrays. By using first-principles calculations, we determine binding energies and diffusion activation barriers of metal adatoms on graphene and h-BN. The observed chemical trends can be understood in terms of the interplay between charge transfer and covalent bonding involving the adatom d electrons. We further investigate the electronic effects of the metallic substrate and find that periodically corrugated templates based on graphene in combination with strong interactions at the metal/graphene interface are the most suitable for the self-assembly of highly regular nanoparticle arrays.

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arXiv2010

Topological Defects in Graphene: Dislocations and Grain Boundaries

Topological defects in graphene, dislocations and grain boundaries, are still not well understood despites the considerable number of experimental observations. We introduce a general approach for constructing dislocations in graphene characterized by arbitrary Burgers vectors as well as grain boundaries, covering the whole range of possible misorientation angles. By using ab initio calculations we investigate thermodynamic and electronic properties of these topological defects, finding energetically favorable symmetric large-angle grain boundaries, strong tendency towards out-of-plane deformation in the small-angle regimes, and pronounced effects on the electronic structure. The present results show that dislocations and grain boundaries are important intrinsic defects in graphene which may be used for engineering graphene-based nanomaterials and functional devices.

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arXiv2010

Emergence of magnetism in graphene materials and nanostructures

Magnetic materials and nanostructures based on carbon offer unique opportunities for future technological applications such as spintronics. This article reviews graphene-derived systems in which magnetic correlations emerge as a result of reduced dimensions, disorder and other possible scenarios. In particular, zero-dimensional graphene nanofragments, one-dimensional graphene nanoribbons, and defect-induced magnetism in graphene and graphite are covered. Possible physical mechanisms of the emergence of magnetism in these systems are illustrated with the help of computational examples based on simple model Hamiltonians. In addition, this review covers spin transport properties, proposed designs of graphene-based spintronic devices, magnetic ordering at finite temperatures as well as the most recent experimental achievements.

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arXiv2009

Magnetoresistive junctions based on epitaxial graphene and hexagonal boron nitride

We propose monolayer epitaxial graphene and hexagonal boron nitride (h-BN) as ultimate thickness covalent spacers for magnetoresistive junctions. Using a first-principles approach, we investigate the structural, magnetic and spin transport properties of such junctions based on structurally well defined interfaces with (111) fcc or (0001) hcp ferromagnetic transition metals. We find low resistance area products, strong exchange couplings across the interface, and magnetoresistance ratios exceeding 100% for certain chemical compositions. These properties can be fine tuned, making the proposed junctions attractive for nanoscale spintronics applications.

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arXiv2009

Topological Frustration in Graphene Nanoflakes: Magnetic Order and Spin Logic Devices

Magnetic order in graphene-related structures can arise from size effects or from topological frustration. We introduce a rigorous classification scheme for the types of finite graphene structures (nano-flakes) which lead to large net spin or to antiferromagnetic coupling between groups of electron spins. Based on this scheme, we propose specific examples of structures that can serve as the fundamental (NOR and NAND) logic gates for the design of high-density ultra-fast spintronic devices. We demonstrate, using ab initio electronic structure calculations, that these gates can in principle operate at room temperature with very low and correctable error rates.

cond-mat.other↗

arXiv2008

Magnetism in Disordered Graphene and Irradiated Graphite

The magnetic properties of disordered graphene and irradiated graphite are systematically studied using a combination of mean-field Hubbard model and first-principles calculations. By considering large-scale disordered models of graphene, I conclude that only single-atom defects can induce ferromagnetism in graphene-based materials. The preserved stacking order of graphene layers is shown to be another necessary condition for achieving a finite net magnetic moment of irradiated graphite. Ab initio calculations of hydrogen binding and diffusion and of interstitial-vacancy recombination further confirm the crucial role of stacking order in $π$-electron ferromagnetism of proton-bombarded graphite.

cond-mat.mtrl-sci↗

arXiv2008

Effect of Metal Element in Catalytic Growth of Carbon Nanotubes

Using first principles calculations, we model the chemical vapor deposition (CVD) growth of carbon nanotubes (CNT) on nanoparticles of late transition (Ni, Pd, Pt) and coinage (Cu, Ag, Au) metals. The process is analyzed in terms of the binding of mono- and diatomic carbon species, their diffusion pathways, and the stability of the growing CNT. We find that the diffusion pathways can be controlled by the choice of the catalyst and the carbon precursor. Binding of the CNT through armchair edges is more favorable than through zigzag ones, but the relative stability varies significantly among the metals. Coinage metals, in particular Cu, are found to favor CVD growth of CNTs at low temperatures and with narrow chirality distributions.

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