arXiv subjects

Oleksandr Pshyk

Publications and source records attributed to Oleksandr Pshyk.

4 recordsLinked to original sources

arXiv2026

Tuning the optoelectronic properties of wide bandgap perovskites: Data-driven insights from combinatorial synthesis and high-throughput experimentation

The discovery and optimization of wide-bandgap lead halide perovskites (LHPs) is hindered by solution-based workflows with limited scalability. Large compositional parameter spaces present an additional challenge for materials optimization. Here, we establish an integrated, combinatorial workflow based on sequential physical vapor deposition that enables independent tuning of cation (Cs/Pb) and anion (Br/Cl) compositions. Applying automated structural, compositional, and optical characterizations across >500 samples regions of interest are rapidly screened in the quaternary Cs-Pb-Br-Cl space. From the screening, we establish a practical Cs/Pb window of 1.05-1.20 for wide bandgap perovskites, within which elevated PL yields were observed. Through in-depth analysis of the data set, we uncover a high-energy optical transition as a robust determinant for high PL yields. By combining mechanistic insight into the compositional origins of high PL efficiency with a fully integrated, high-throughput screening framework, and by openly releasing the complete multi-modal dataset, this work provides a broadly accessible benchmark to accelerate data-driven discovery of wide-bandgap perovskites.

cond-mat.mtrl-sci↗

arXiv2026

Loss Mechanisms in High-coherence Multimode Mechanical Resonators Coupled to Superconducting Circuits

Circuit quantum acoustodynamics (cQAD) devices have a wide range of applications in quantum science, all of which depend crucially on the quantum coherence of the mechanical subsystem. In this context, high-overtone bulk acoustic-wave resonators (HBARs) are particularly promising, since they have shown very high quality factors with negligible dephasing. However, the introduction of piezoelectric films, which are necessary for coupling to a superconducting circuit, can lead to additional loss channels, such as surface scattering and two-level systems (TLS). Here, we study the acoustic dissipation of HBAR resonators in cQAD systems and find that the defect density of the piezoelectric material and its interface with the bulk are limiting factors for the coherence. We measure acoustic modes with phonon lifetimes up to 400 $μ$s and lifetime-limited coherence times approaching one millisecond in the quantum regime. When coupled to a superconducting qubit, this leads to a hybrid system with a large quantum coherence cooperativity of $C_{T_2}=1.1\times10^5$. These results represent a new milestone for the performance of cQAD devices and offer concrete paths forward for further improvements.

quant-ph↗

arXiv2025

Accelerating the development of oxynitride thin films: A combinatorial investigation of the Al-Si-O-N system

Oxynitrides are used in a variety of applications including photocatalysts, high-k dielectrics or wear-resistant coatings and often show intriguing multi-functionality. To accelerate the co-optimization of the relevant material properties of these compositionally complex oxynitride systems, high-throughput synthesis and characterization methods are desirable. In the present work, three approaches were investigated to obtain orthogonal anion and cation gradients on the same substrate by magnetron sputtering. The different approaches included varying positions of the local reactive gas inlets and different combinations of target materials. The best performing approach was applied to screen a large two-dimensional area of the quaternary phase space within the Al-Si-O-N system. This material system is a promising candidate for transparent protective coatings with variable refractive indices. With only five depositions of combinatorial libraries, an anion composition range of 2-46% O/(N+O) and a cation composition range of 4-44% Si/(Al+Si) is covered. For lower oxygen and silicon contents, a region with hardness of up to 25 GPa is observed, where the material exhibits either wurtzite AlN or a composite microstructure. By increasing the deposition temperature to 400 °C, an extension of this region can be achieved. At higher oxygen and silicon contents, the structure of the samples is X-ray amorphous. In this structural region, an intimate correlation between hardness and refractive index is confirmed. The results of this study introduce a practical approach to perform high-throughput development of mixed anion materials, which is transferable to many materials systems and applications.

cond-mat.mtrl-sci↗

arXiv2024

Low Temperature Deposition of Functional Thin Films on Insulating Substrates: Selective Ion Acceleration using Synchronized Floating Potential HiPIMS

Ionized physical vapor deposition techniques, such as high-power impulse magnetron sputtering (HiPIMS) are gaining popularity due to their ability to produce high-quality thin films at low deposition temperatures. In those techniques, ions are commonly accelerated onto the growing film using negative potential applied to the substrate. One key challenge however is, how such potentials can be applied on insulating or electrically floating substrates. In this work, we present a novel approach for low-temperature deposition of high-quality thin films on insulating substrates using Synchronized Floating Potential High-Power Impulse Magnetron Sputtering (SFP-HiPIMS). This technique leverages the negative floating potential, induced on the substrate during the HiPIMS discharge. By synchronizing the ion arrival with the substrate's floating potential, specific ions can be accelerated preferentially, thereby enhancing adatom mobility and improving film quality while mitigating the detrimental effects of Ar+ ion bombardment. Our proof-of-concept study demonstrates the deposition of high-quality, textured Al0.8Sc0.2N thin films on various insulating substrates at low temperatures. We show that synchronizing the Al and Sc ion fluxes with the induced negative floating potential significantly enhances the films' crystallinity, c-axis texture and at the same time reduces residual stress. In addition, it enables epitaxial growth on sapphire at temperatures as low as 100°C. The results of this study demonstrate that SFP-HiPIMS provides a practical and economical solution for a long-standing challenge in physical vapor deposition, which can be implemented in standard deposition equipment. SFP-HiPIMS therefore paves the way for advanced manufacturing processes in various emerging technologies.

physics.app-ph↗