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Olena M. Kapran

Publications and source records attributed to Olena M. Kapran.

2 recordsLinked to original sources

Accurate determination of the Josephson critical current by lock-in measurements

Operation of Josephson electronics usually requires determination of the Josephson critical current $I_c$, which is affected both by fluctuations and measurement noise. Lock-in measurements allow obviation of $1/f$ noise and, therefore, provide a major advantage in terms of noise and accuracy with respect to conventional dc-measurements. In this work we show both theoretically and experimentally that the $I_c$ can be accurately extracted using first and third harmonic lock-in measurements of junction resistance. We derive analytic expressions and verify them experimentally on nano-scale Nb-PtNi-Nb and Nb-CuNi-Nb Josephson junctions.

cond-mat.supr-con

Transport characterization of magnetic states in Superconductor/Ferromagnet Nb/Co multilayers

Employment of the non-trivial proximity effect in Superconductor/Ferromagnet (S/F) heterostructures for creation of novel superconducting devices requires an accurate control of magnetic states in complex thin-film multilayers composing such devices. In this work we study experimentally in-plane transport properties of micro-structured Nb/Co multilayers. We apply various experimental techniques for characterization of multilayers, including the anisotropic magnetoresistance, the Hall effect and the first-order-reversal-curves analysis. We demonstrate that a combination of those techniques can provide a detailed knowledge of the magnetic state of the multilayer. In particular, we identify the range of existence of the coherently rotating, monodomain scissor-like state. It is anticipated, that in this noncollinear magnetic state the unconventional odd-frequency spin-triplet order parameter should appear. The non-hystertic nature of this state allows reversible tuning of the magnetic orientation. Thus, we identify the range of parameters and the procedure for controllable operation of devices based on such S/F heterostructures.

cond-mat.supr-con