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Olindo Isabella

Publications and source records attributed to Olindo Isabella.

2 recordsLinked to original sources

Energy Yield and Lifetime Climate Classification via Machine Learning for Optimizing Photovoltaic Module Design and Materials

To resiliently and sustainably meet our future energy demand, photovoltaic (PV) modules must be deployed across a broad and diverse range of geographical regions with varying operating conditions. As these conditions strongly affect both performance and optimal system design, a dedicated PV-specific climate classification can be of great use. In this work, we develop a climate classification framework tailored to PV applications using a variety of machine learning (ML) techniques. Building on previous studies, our approach incorporates both energy yield, and for the first time, also the module lifetime with climate dependent degradation. We generate an interpolated dataset containing twelve input features and two target variables (i.e. energy yield and module lifetime). Feature importance analysis shows that annual global horizontal irradiation and ambient temperature are the most influential predictors. The most accurate regression model achieves root mean square errors (RMSE) of 0.007 MWh for energy yield and 1.5 years for lifetime prediction. The calculated feature importance scores are then integrated into a hierarchical clustering framework, resulting in 6 primary climate clusters (Tropical, Desert, Continental, Temperate, Boreal, and Polar) and 15 corresponding subclusters. Our analysis shows that the low temperature continental climate offers the highest discounted lifetime energy yield. These results can support a wide range of applications, including PV module optimization, system siting decisions, and comparative performance studies.

physics.comp-ph

The nature of silicon PN junction impedance at high frequency

A thorough understanding of the small-signal response of solar cells can reveal intrinsic device characteristics and pave the way for innovations. This study investigates the impedance of crystalline silicon PN junction devices using TCAD simulations, focusing on the impact of frequency, bias voltage, and the presence of a low-high (LH) junction. It is shown that the PN junction exhibits a fixed $RC$-loop behavior at low frequencies, but undergoes relaxation in both resistance $R_j$ and capacitance $C_j$ as frequency increases. Moreover, it is revealed that the addition of a LH junction impacts the impedance by altering $R_j$, $C_j$, and the series resistance $R_s$. Contrary to conventional modeling approaches, which often include an additional $RC$-loop to represent the LH junction, this study suggests that such a representation does not represent the underlying physics, particularly the frequency-dependent behavior of $R_j$ and $C_j$.

physics.app-ph