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Oliver M. Nix

Publications and source records attributed to Oliver M. Nix.

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Single-Emitter Spectra from an Ensemble

The heterogeneity in nanoscale emitters hinders efforts to understand their basic photophysics and limits their use in practical applications. Existing methods have difficulty accurately characterizing single-emitter spectra and optical heterogeneity on a statistical scale. Here, we introduce SPICEE (SPectrally Imbalanced Correlations from Ensemble Emission), a spectrally filtered photon-correlation technique that recovers single-particle emission lineshapes from an ensemble sample. Analytical derivations, numerical modeling, and experiments on a solution ensemble of emitters validate the technique. We apply SPICEE to blue-emitting ZnSeTe semiconductor nanocrystals relevant to display applications and find that the low color purity in the ensemble spectrum is primarily caused by a small subpopulation of nanocrystals with a distinct emission mechanism. This work demonstrates that SPICEE is a powerful high-throughput tool for accurately characterizing the single-emitter properties of nanoscale systems.

cond-mat.mes-hall

Triplet Exciton Sensitization of Silicon Mediated by Defect States in Hafnium Oxynitride

Singlet exciton fission has the potential to increase the efficiency of crystalline silicon solar cells beyond the conventional single junction limit. Perhaps the largest obstacle to achieving this enhancement is uncertainty about energy coupling mechanisms at the interfaces between silicon and exciton fission materials such as tetracene. Here, the previously reported silicon-hafnium oxynitride-tetracene structure is studied and a combination of magnetic-field-dependent silicon photoluminescence measurements and density functional theory calculations is used to probe the influence of the interlayer composition on the triplet transfer process across the hafnium oxynitride interlayer. It is found that hafnium oxide interlayers do not show triplet exciton sensitization of silicon, and that nitrogen content in hafnium oxynitride layers is correlated with enhanced sensitization. Calculation results reveal that defects in hafnium oxynitride interlayers with higher nitrogen content introduce states close to the band-edge of silicon, which can mediate the triplet exciton transfer process. Some defects introduce additional deleterious mid-gap states, which may explain observed silicon photoluminescence quenching. These results show that band-edge states can mediate the triplet exciton transfer process, potentially through a sequential charge transfer mechanism.

cond-mat.mtrl-sci