arXiv subjects

Olivier Girard

Publications and source records attributed to Olivier Girard.

4 recordsLinked to original sources

arXiv2026

Optical design for implementing non-collinear circularly polarized high harmonic generation in an enhancement cavity

We introduce an original optical cavity design intended to efficiently output-couple extreme ultraviolet (XUV) light produced via cavity-enhanced high harmonic generation (CE-HHG). It supports the amplification of oppositely circularly polarized modes, crossing with a small angle in the high finesse cavity, where circularly polarized HHG scheme (NCP-HHG) will be implemented. We present an analytical model, numerical simulations, and experimental results obtained with a low-power continuous (CW) laser, demonstrating the strong potential of the cavity as an efficient XUV output coupling method. In particular, it is well suited for producing the 7th harmonic (H7) from an Ytterbium frequency comb at 8.4 eV, which is of particular interest for precision nuclear spectroscopy of Thorium.

physics.optics↗

arXiv2026

Spiking Photonic Neurons Based on Two-Section InP Quantum-Well Lasers Integrated on Silicon

In this work we experimentally investigate the spiking dynamics of two-section InP quantum-well lasers monolithically integrated on silicon. By appropriately tuning the electrical bias conditions, we realize multiple neuronal-like operating regimes, such as integrate-and-fire and resonate-and-fire, highlighting the device's versatility as a high-speed photonic neuron. A systematic investigation of laser design parameters, including cavity length and gain/saturable absorber ratio, elucidates their impact on spiking-related properties (such as pulse repetition frequency) and traces the operational parameter space that unlocks stable spiking. Finally, these findings pave the way toward scalable neuromorphic photonic integrated circuits, where low-loss silicon synapses coexist with versatile laser neurons.

physics.optics↗

arXiv2022

The Silicon Electron Multiplier Sensor

The Silicon Electron Multiplier (SiEM) is a novel sensor concept for minimum ionizing particle (MIP) detection which uses internal gain and fine pitch to achieve excellent temporal and spatial resolution. In contrast to sensors where the gain region is induced by doping (LGADs, APDs), amplification in the SiEM is achieved by applying an electric potential difference in a composite electrode structure embedded within the silicon bulk using MEMS fabrication techniques. Since no gain-layer deactivation is expected with radiation damage, such a structure is expected to withstand fluences of up to $10^{16} n_{eq}$. Various geometries and biasing configurations are studied, within the boundaries imposed by the fabrication process being considered. The effective gain, the field in the sensor, the leakage current and breakdown conditions are studied for cell sizes in the range of $6 - 15 μm$. Simulations show that gains in excess of 10 can be achieved, and studies of the time structure of the induced signals from a charge cloud deposited in the middle of the sensor show that time resolutions similar to other sensors with internal gain can be expected. Plans for the manufacture of a proof-of-concept sensor and for its subsequent characterisation are discussed.

physics.ins-det↗

arXiv2018

Characterisation of silicon photomultipliers based on statistical analysis of pulse-shape and time distributions

A detailed and accurate characterisation of silicon photomultiplier detectors is required for a better understanding of the signal and noise in many applications. The collected information is a valuable feedback to the manufacturers in their attempt to improve the performances. In this paper, we provide a detailed description of how to characterise these photo-detectors. The correlated noise probabilities, the important time constants and the photon detection efficiency are obtained with a statistical analysis of pulse-shape and time distributions. The method is tested with different detectors. The quench resistor, the breakdown voltage and the dark count rate are measured from IV characteristics.

physics.ins-det↗