Temperature dependence of the charge density from first principles: application to the (222) forbidden reflection in silicon
Forbidden reflections (FRs) in X-ray diffraction have inherently weak intensity and have long been studied, in particular in semiconductors like silicon. They serve as sensitive probes of symmetry breaking, local strain, impurities, and weak charge redistribution. Despite extensive experimental work, the theory of their temperature dependence has typically relied on simplified models. While atomic Debye-Waller factors work well on allowed reflections, their applicability to the valence charge between atoms, which determines the intensity of FRs such as Si (222), is questionable, and previous agreement between theory and experiment relied on ad-hoc Debye-Waller corrections. We compute the temperature-dependent valence charge density $\rho(\mathbf{r},T)$ of silicon from first principles, using two methods: (i) perturbation theory, and (ii) averaging over thermally distorted supercells in a non-perturbative approach. The perturbative expression for the charge density is far more demanding than that for electronic energies, since it depends on the wavefunctions themselves and requires an explicit sum over unoccupied bands. We use an acoustic sum rule to express the second derivatives of the potential in terms of first derivatives, making the expression tractable within existing frameworks. The (222) FR then follows directly from the Fourier transform of $\rho(\mathbf{r},T)$, with no ad-hoc factors. Both methods give similar results, in reasonable agreement with experiment, with thermal expansion noticeably affecting the temperature dependence. The charge density answers a question the measured intensities could not settle: how the valence charge actually redistributes with temperature. Relative to the rigid model, we find more charge in the bonds and less in the core regions, a redistribution that shows up in the intensity as a somewhat weaker temperature dependence of the (222) FR.