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Or Shafir

Publications and source records attributed to Or Shafir.

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Insights into Chemical and Structural Order at Planar Defects in a Functional Oxide Using Multislice Electron Ptychography

Switchable order parameters in ferroic materials are essential for functional electronic devices, yet disruptions of the ordering can take the form of planar boundaries or defects that exhibit distinct properties. Characterizing the structure of these boundaries is challenging due to their confined size and three-dimensional nature. Here, a chemical anti-phase boundary in the highly ordered double perovskite \ce{Pb2MgWO6} is investigated using multislice electron ptychography. The boundary is revealed to be inclined along the electron beam direction with a finite width of chemical intermixing. Additionally, regions at and near the boundary exhibit antiferroelectric-like displacements, contrasting with the predominantly paraelectric matrix. Spatial statistics and density functional theory calculations further indicate that despite their higher energy, chemical anti-phase boundaries form due to kinetic constraints during growth, with extended antiferroelectric-like distortions induced by the chemically frustrated environment in the proximity of the boundary. The three-dimensional imaging provides critical insights into the interplay between local chemistry and the polar environment, elucidating the role of anti-phase boundaries and their associated confined structural distortions and offering new opportunities for engineering ferroic thin films.

cond-mat.mtrl-sci

Bonding-aware Materials Representation for Deep Learning Atomistic Models

Deep potentials for molecular dynamics (MD) achieve first-principles accuracy at much lower computational cost. However, their use in large length- and time-scale simulations is limited by their lower speeds compared to analytical atomistic potentials, primarily due to network complexity and long embedding time. Here, based on the moments theorem, we develop a chemical-bonding-aware embedding for neural network potentials that achieve state-of-the-art accuracy in forces and local electronic density of states prediction with an ultrasmall 16x32 neural network resulting in significantly lower computational cost.

cond-mat.mtrl-sci

Strong Bulk Photovoltaic Effect in Planar Barium Titanate Thin Films

The bulk photovoltaic effect (BPE) leads to the generation of a photocurrent from an asymmetric material. Despite drawing much attention due to its ability to generate photovoltages above the band gap ($E_g$), it is considered a weak effect due to the low generated photocurrents. Here, we show that a remarkably high photoresponse can be achieved by exploiting the BPE in simple planar BaTiO$_3$ (BTO) films, solely by tuning their fundamental ferroelectric properties via strain and growth orientation induced by epitaxial growth on different substrates. We find a non-monotonic dependence of the responsivity ($R_{\rm SC}$) on the ferroelectric polarization ($P$) and obtain a remarkably high BPE coefficient ($\beta$) of $\approx$10$^{-2}$ 1/V, which to the best of our knowledge is the highest reported to date for standard planar BTO thin films. We show that the standard first-principles-based descriptions of BPE in bulk materials cannot account for the photocurrent trends observed for our films and therefore propose a novel mechanism that elucidates the fundamental relationship between $P$ and responsivity in ferroelectric thin films. Our results suggest that practical applications of ferroelectric photovoltaics in standard planar film geometries can be achieved through careful joint optimization of the bulk structure, light absorption, and electrode-absorber interface properties.

cond-mat.mtrl-sci

Advancing from phenomenological to predictive theory of ferroelectric oxide solution properties through consideration of domain walls

Prediction of properties from composition is a fundamental goal of materials science and can greatly accelerate development of functional materials. It is particularly relevant for ferroelectric perovskite solid solutions where compositional variation is a primary tool for materials design. To advance beyond the commonly used Landau-Ginzburg-Devonshire and density functional theory methods that despite their power are not predictive, we elucidate the key interactions that govern ferroelectrics using 5-atom bulk unit cells and non-ground-state defect-like ferroelectric domain walls as a simple as possible but not simpler model systems. We also develop a theory relating properties at several different length scales that provides a unified framework for the prediction of ferroelectric, antiferroelectric and ferroelectric phase stabilities and the key transition temperature, coercive field and polarization properties from composition. The elucidated physically meaningful relationships enable rapid identification of promising piezoelectric and dielectric materials.

cond-mat.mtrl-sci