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Orest Pavlosiuk

Publications and source records attributed to Orest Pavlosiuk.

25 records · Page 2Linked to original sources

Negative longitudinal magnetoresistance as a sign of a possible chiral magnetic anomaly in the half-Heusler antiferromagnet DyPdBi

Magnetotransport investigation of a half-Heusler antiferromagnet DyPdBi revealed hallmark features of Weyl semimetal: huge negative longitudinal magnetoresistance and planar Hall effect. Both effects have recently been linked to chiral magnetic anomaly - axial charge pumping between Weyl nodes. Magnetoresistance (MR) of single crystals of DyPdBi is very pronounced. In magnetic field longitudinal to electrical current direction it reaches -80% and its relative difference with respect to that measured in transverse field (expressed as anisotropic magnetoresistance) is extremely strong: -60% at 10K and 14 T. The planar Hall effect in DyPdBi depends on temperature and magnetic field in non-monotonous way, which has not been previously reported. We compare magnetoresistance measured with voltage contacts on mid-line of the sample with that measured with contacts on its edge, and show that the role of current-jetting, an extrinsic source of anisotropic negative magnetoresistance, is marginal. We discuss that nature of the compound and sample quality exclude intrinsic sources of negative and anisotropic magnetoresistance other than weak localization and the chiral magnetic anomaly.

cond-mat.mtrl-sci↗

Magnetoresistance in YBi and LuBi semimetals due to nearly perfect carrier compensation

Monobismuthides of yttrium and lutetium are shown as new representatives of materials which exhibit extreme magnetoresistance and magnetic-field-induced resistivity plateau. At low temperatures and in magnetic field of 9T the magnetoresistance attains the order of magnitude of 10,000% and 1,000%, on YBi and LuBi, respectively. Our thorough examination of electron transport properties of both compounds show that observed features are the consequence of nearly perfect carrier compensation rather than of possible nontrivial topology of electronic states. The field-induced plateau of electrical resistivity can be explained with Kohler scaling. Anisotropic multi-band model of electronic transport describes very well the magnetic field dependence of electrical resistivity and Hall resistivity. Data obtained from the Shubnikov-de Haas oscillations analysis also confirm that Fermi surface of each compound contains almost equal amounts of holes and electrons. First-principle calculations of electronic band structure are in a very good agreement with the experimental data.

cond-mat.mtrl-sci↗

Galvanomagnetic properties of the putative type-II Dirac semimetal PtTe$_2$

Platinum ditelluride has recently been characterized, based on angle-resolved photoemission spectroscopy data and electronic band structure calculations, as a possible representative of type-II Dirac semimetals. Here, we report on the magnetotransport behavior (electrical resistivity, Hall effect) in this compound, investigated on high-quality single-crystalline specimens. The magnetoresistance (MR) of PtTe$_2$ is large (over $3000\%$ at $T=1.8$ K in $B=9$ T) and unsaturated in strong fields in the entire temperature range studied. The MR isotherms obey a Kohler's type scaling with the exponent $m$ = 1.69, different from the case of ideal electron-hole compensation. In applied magnetic fields, the resistivity shows a low-temperature plateau, characteristic of topological semimetals. In strong fields, well-resolved Shubnikov - de Haas (SdH) oscillations with two principle frequencies were found, and their analysis yielded charge mobilities of the order of $10^3\,\rm{cm^2V^{-1}s^{-1}}$ and rather small effective masses of charge carriers, $0.11m_e$ and $0.21m_e$. However, the extracted Berry phases point to trivial character of the electronic bands involved in the SdH oscillations. The Hall effect data corroborated a multi-band character of the electrical conductivity in PtTe$_2$, with moderate charge compensation.

cond-mat.mtrl-sci↗

Observation of Dirac state in half-Heusler material YPtBi

The prediction of non-trivial topological electronic states hosted by half-Heusler compounds makes them prime candidates for discovering new physics and devices as they harbor a variety of electronic ground states including superconductivity, magnetism, and heavy fermion behavior. Here we report normal state electronic properties of a superconducting half-Heusler compound YPtBi using angle-resolved photoemission spectroscopy (ARPES). Our data reveal the presence of a Dirac state at the zone center of the Brillouin zone at 500 meV below the chemical potential. We observe the presence of multiple Fermi surface pockets including two concentric hexagonal and six half oval shaped pockets at the gamma and K points of the Brillouin zone, respectively. Furthermore, our measurements show Rashba-split bands and multiple surface states crossing the chemical potential which are supported by the first-principles calculations. Our finding of a Dirac state in YPtBi plays a significant role in establishing half-Heusler compounds as a new potential platform for novel topological phases and explore their connection with superconductivity.

cond-mat.mes-hall↗

Giant magnetoresistance, three-dimensional Fermi surface and origin of resistivity plateau in YSb semimetal

Very strong magnetoresistance and a resistivity plateau impeding low temperature divergence due to insulating bulk are hallmarks of topological insulators and are also present in topological semimetals where the plateau is induced by magnetic field, when time-reversal symmetry (protecting surface states in topological insulators) is broken. Similar features were observed in a simple rock-salt-structure LaSb, leading to a suggestion of the possible non-trivial topology of 2D states in this compound. We show that its sister compound YSb is also characterized by giant magnetoresistance exceeding one thousand percent and low-temperature plateau of resistivity. We thus performed in-depth analysis of YSb Fermi surface by band calculations, magnetoresistance, and Shubnikov--de Haas effect measurements, which reveals only three-dimensional Fermi sheets. Kohler scaling applied to magnetoresistance data accounts very well for its low-temperature upturn behavior. The field-angle-dependent magnetoresistance demonstrates a 3D-scaling yielding effective mass anisotropy perfectly agreeing with electronic structure and quantum oscillations analysis, thus providing further support for 3D-Fermi surface scenario of magnetotransport, without necessity of invoking topologically non-trivial 2D states. We discuss data implying that analogous field-induced properties of LaSb can also be well understood in the framework of 3D multiband model.

cond-mat.mtrl-sci↗

Antiferromagnetism and superconductivity in the half-Heusler semimetal HoPdBi

We observed the coexistence of superconductivity and antiferromagnetic order in the single-crystalline ternary pnictide HoPdBi, a plausible topological semimetal. The compound orders antiferromagnetically at $T_N =$1.9 K and exhibits superconductivity below $T_c =$0.7 K, which was confirmed by magnetic, electrical transport and specific heat measurements. The specific heat shows anomalies corresponding to antiferromagnetic ordering transition and crystalline field effect, but not to superconducting transition. Single-crystal neutron diffraction indicates that the antiferromagnetic structure is characterized by the (1/2, 1/2, 1/2) propagation vector. Temperature variation of the electrical resistivity reveals two parallel conducting channels of semiconducting and metallic character. In weak magnetic fields, the magnetoresistance exhibits weak antilocalization effect, while in strong fields and temperatures below 50 K it is large and negative. At temperatures below 7 K Shubnikov-de Haas oscillations with two frequencies appear in the resistivity. These oscillations have non-trivial Berry phase, which is a distinguished feature of Dirac fermions.

cond-mat.mtrl-sci↗

Shubnikov-de Haas oscillations, weak antilocalization effect and large linear magnetoresistance in the putative topological superconductor LuPdBi

We present electronic transport and magnetic properties of single crystals of semimetallic half-Heusler phase LuPdBi, having theoretically predicted band inversion requisite for nontrivial topological properties. The compound exhibits superconductivity below a critical temperature $T_{\rm c}=1.8\,$K, with a zero-temperature upper critical field $B_{\rm c2}\approx2.3\,$T. Although superconducting state is clearly reflected in the electrical resistivity and magnetic susceptibility data, no corresponding anomaly can be seen in the specific heat. Temperature dependence of the electrical resistivity suggests existence of two parallel conduction channels: metallic and semiconducting, with the latter making negligible contribution at low temperatures. The magnetoresistance is huge and clearly shows a weak antilocalization effect in small magnetic fields. Above about 1.5 T, the magnetoresistance becomes linear and does not saturate in fields up to 9 T. The linear magnetoresistance is observed up to room temperature. Below 10 K, it is accompanied by Shubnikov-de Haas oscillations. Their analysis reveals charge carriers with effective mass of $0.06\,m_e$ and a Berry phase very close to $π$, expected for Dirac-fermion surface states, thus corroborating topological nature of the material.

cond-mat.mtrl-sci↗