arXiv subjects

Oscar Bulancea-Lindvall

Publications and source records attributed to Oscar Bulancea-Lindvall.

7 recordsLinked to original sources

arXiv2026

An extended ab initio theory of the V$_{\text{B}}^-$ center in hBN: excited states, Jahn-Teller distortion, and pressure dependence

Ensembles of negatively charged boron vacancy (V$_{\text{B}}^-$) centers in hexagonal boron nitride (hBN) have emerged as a two-dimensional spin qubit system interfaced with optics to advance nanoscale quantum sensing. However, a comprehensive description of its optically detected magnetic resonance (ODMR) signal remains challenging due to the strongly correlated nature of the excited electronic states involved in its optical cycle. In this work, we model the energetics, structural relaxation, and transition rates of the V$_{\text{B}}^-$ center using a high-level wave-function-based electron correlation method (CASSCF-NEVPT2). We provide a thorough analysis of the excited state fine structure and pseudo Jahn-Teller effects, singlet-triplet quasi-degeneracies, photoluminescence parameters, intersystem crossing pathways, and stress-dependence of the fine structure and decay parameters. Our findings not only clarify the fundamental behavior of the V$_{\text{B}}^-$ center in hBN but also establish the theoretical foundation for advancing the V$_{\text{B}}^-$ center's readout for integrated 2D quantum sensors.

cond-mat.mtrl-sci↗

arXiv2025

Demonstration of the ODMR activity of the telecom range ClV center in SiC: a wavefunction theory analysis

Recently, density functional theory-based high-throughput screening of point defects in 4H-SiC revealed the positively charged chlorine-vacancy (ClV) defect to be a promising quantum bit candidate emitting at telecom wavelengths, with an electronic structure analogous to the well-known NV center in diamond. Furthermore, recent infrared photoluminescence (PL) measurements on chlorine-implanted 4H-SiC have revealed new PL lines associated with the ClV defect. While the defect possesses a high-spin ground state, there is a lack of evidence of optically detected magnetic resonance (ODMR), a key ingredient for optical spin initialization and readout. In this Letter, we employ a multireference wavefunction-based quantum chemistry method, specifically, second-order perturbation theory (NEVPT2) on top of a defect-localized many-body wavefunction (CASSCF), to explore the many-body electronic structure of the ClV center. We estimate photoluminescence, internal conversion, and intersystem crossing rates to investigate the possibility of spin polarization and ODMR activity. Our findings establish the ClV center in 4H-SiC as an optically addressable spin qubit with fiber optics compatibility in the technologically mature 4H-SiC host material, enabling the development of large-scale quantum networks.

cond-mat.mtrl-sci↗

arXiv2025

Theoretical characterization of NV-like defects in 4H-SiC using ADAQ with the SCAN and r2SCAN meta-GGA functionals

Kohn-Sham density functional theory (DFT) is widely used for screening color centers in semiconductors. While the Perdew-Burke-Ernzerhof (PBE) functional is efficient, it often lacks precision in describing defects. The Heyd-Scuseria-Ernzerhof (HSE) functional is more accurate but computationally expensive, making it impractical for large-scale screening. However, third-rung functionals of "Jacob's ladder" remain largely under explored in this context. This study evaluates the Strongly Constrained and Appropriately Normed (SCAN) family of meta-GGA functionals as potential alternatives to PBE for characterizing NV-like color centers in 4H-SiC using the Automatic Defect Analysis and Qualification (ADAQ) framework. We examine nitrogen, oxygen, fluorine, sulfur, and chlorine vacancies in 4H-SiC, focusing on applications in quantum technology. Our results show that SCAN and r2SCAN achieve greater accuracy than PBE, approaching HSE's precision at a lower computational cost. This suggests that the SCAN family offers a practical improvement for screening new color centers, with computational demands similar to PBE.

cond-mat.mtrl-sci↗

arXiv2024

Temperature dependence of the AB-lines and Optical Properties of the Carbon-Antisite Vacancy Pair in 4H-SiC

Defects in semiconductors have in recent years been revealed to have interesting properties in the venture towards quantum technologies. In this regard, silicon carbide has shown great promise as a host for quantum defects. In particular, the ultra-bright AB photoluminescence lines in 4H-SiC are observable at room temperature and have been proposed as a single-photon quantum emitter. These lines have been previously studied and assigned to the carbon antisite-vacancy pair (CAV). In this paper, we report on new measurements of the AB-lines' temperature dependence, and carry out an in-depth computational study on the optical properties of the CAV defect. We find that the CAV defect has the potential to exhibit several different zero-phonon luminescences with emissions in the near-infrared telecom band, in its neutral and positive charge states. However, our measurements show that the AB-lines only consist of three non-thermally activated lines instead of the previously reported four lines, meanwhile our calculations on the CAV defect are unable to find optical transitions in full agreement with the AB-line assignment. In the light of our results, the identification of the AB-lines and the associated room temperature emission require further study.

cond-mat.mtrl-sci↗

arXiv2023

The Chlorine Vacancy in 4H-SiC: An NV-like Defect With Telecom Emission

The diamond nitrogen vacancy (NV) center remains an ever increasing topic of interest. At present, it is considered an ideal example of a solid-state qubit applicable in quantum communication, computing, and sensing alike. With its success, the search for defects that share or improve upon its advantageous features is an ongoing endeavor. By performing large-scale high-throughput screening of 52600 defects in 4H silicon carbide (SiC), we identify a collection of NV-like color-centers of particular interest. From this list, the single most promising candidate consists of a silicon vacancy and chlorine substituted on the carbon site, and is given the name of the chlorine vacancy (ClV) center. Through high-accuracy first-principle calculations, we confirm that the ClV center is similar to the NV center in diamond in its local structure and shares many qualitative and quantitative features in the electronic structure and spin properties. In contrast to the NV center, however, the ClV center in SiC exhibits emission in the telecom range near the C-band.

cond-mat.mtrl-sci↗

arXiv2022

Isotope purification induced reduction of spin relaxation and spin coherence times in semiconductors

Paramagnetic defects and nuclear spins are often the major sources of decoherence and spin relaxation in solid-state qubits realized by optically addressable point defect spins in semiconductors. It is commonly accepted that a high degree of depletion of nuclear spins can enhance the coherence time by reducing magnetic noise. Here we show that the isotope purification beyond a certain optimal level becomes contra-productive, when both electron and nuclear spins are present in the vicinity of the qubits. Using state-of-the-art numerical tools and considering the silicon vacancy qubit in various spin environments, we demonstrate that the coupling to spin-1/2 point defects in the lattice can be significantly enhanced by isotope purification. The enhanced coupling shortens the spin relaxation time that in turn may limit the the coherence time of spin qubits. Our results can be straightforwardly generalized to triplet point defect qubits, such as the NV center in diamond and the divacancy in SiC.

cond-mat.mes-hall↗

arXiv2022

Low-field microwave-free sensors using dipolar spin relaxation of quartet spin states in silicon carbide

Paramagnetic defects and nuclear spins are the major sources of magnetic field-dependent spin relaxation in point defect quantum bits. The detection of related optical signals has led to the development of advanced relaxometry applications with high spatial resolution. The nearly degenerate quartet ground state of the silicon vacancy qubit in silicon carbide (SiC) is of special interest in this respect, as it gives rise to relaxation rate extrema at vanishing magnetic field values and emits in the first near-infra-red transmission window of biological tissues, providing an opportunity for developing novel sensing applications for medicine and biology. However, the relaxation dynamics of the silicon vacancy center in SiC have not yet been fully explored. In this paper, we present results from a comprehensive theoretical investigation of the dipolar spin relaxation of the quartet spin states in various local spin environments. We discuss the underlying physics and quantify the magnetic field and spin bath dependent relaxation time $T_1$. Using these findings we demonstrate that the silicon vacancy qubit in SiC can implement microwave-free low magnetic field quantum sensors of great potential.

cond-mat.mtrl-sci↗