arXiv subjects

Oskar J. Sandberg

Publications and source records attributed to Oskar J. Sandberg.

13 recordsLinked to original sources

arXiv2026

Capacitance of Undoped Thin-Film Diodes

The capacitance of thin-film diodes based on undoped semiconductors are dominated by injected charge carriers rather than doping-induced carriers. However, an analytical framework of the capacitance in these devices has remained elusive. Here, we derive an analytical description of the capacitance, fully accounting for injected charge carrier and electrode charge effects. Based on these findings, a method to extract the built-in voltage in these devices is presented. The theoretical framework is substantiated numerically by drift-diffusion simulations and experimentally on organic solar cells.

physics.app-ph↗

arXiv2026

What Photocurrent Versus Effective Voltage Tells Us About Charge Generation in Organic Solar Cells

The photocurrent of an organic solar cell is routinely plotted against an effective voltage and used to extract an exciton dissociation probability, and through it a free-charge generation efficiency. The photocurrent measures neither. Using a drift-diffusion model in which free-charge generation is field independent and losses occur only by bimolecular recombination, we show that the apparent dissociation probability returned by this procedure lies well below unity even for complete dissociation. Across wide variations of carrier mobility and recombination strength it is a single-valued function of the fill factor and coincides with the short-circuit charge collection efficiency, reporting neither the generation yield nor anything about collection beyond what the fill factor already shows. Even for ideal transport the normalised photocurrent saturates below unity at an intensity-independent first-order limit set by recombination of photogenerated carriers with injected equilibrium charge. Applied to four organic solar cells whose generation efficiencies are known independently, the apparent dissociation probabilities track the short-circuit collection efficiency rather than the generation yield. We therefore suggest this construction not be used, particularly in the high-efficiency non-fullerene acceptor systems that are now state of the art.

physics.app-ph↗

arXiv2023

The Thermodynamic Limit of Indoor Photovoltaics Based on Energetically-Disordered Molecular Semiconductors

Due to their tailorable optical properties, organic semiconductors show considerable promise for use in indoor photovoltaics (IPVs), which present a sustainable route for powering ubiquitous "Internet-of-Things" devices in the coming decades. However, owing to their excitonic and energetically disordered nature, organic semiconductors generally display considerable sub-gap absorption and relatively large nonradiative losses in solar cells. To optimize organic semiconductor-based photovoltaics, it is therefore vital to understand how energetic disorder and non-radiative recombination limit the performance of these devices under indoor light sources. In this work, we explore how energetic disorder, sub-optical gap absorption, and non-radiative open-circuit voltage losses detrimentally affect the upper performance limits of organic semiconductor-based IPVs. Based on these considerations, we provide realistic upper estimates for the power conversion efficiency. The energetic disorder, inherently present in molecular semiconductors, is generally found to shift the optimal optical gap from 1.83 eV to ~1.9 eV for devices operating under LED spectra. Finally, we also describe a methodology (accompanied by a computational tool with a graphical user interface) for predicting IPV performance under arbitrary illumination conditions. Using this methodology, we estimate the indoor PCEs of several photovoltaic materials, including the state-of-the-art systems PM6:Y6 and PM6:BTP-eC9.

physics.app-ph↗

arXiv2022

A quasi steady-state measurement of exciton diffusion lengths in organic semiconductors

Understanding the role that exciton diffusion plays in organic solar cells is a crucial to understanding the recent rise in power conversion effciencies brought about by non-fullerene acceptors (NFA). Established methods for measuring exciton diffusion lengths in organic solar cells require specialized equipment designed for measuring high-resolution time-resolved photoluminescence (TRPL). Here we introduce a technique, coined pulsed-PLQY, to measure the diffusion length of organic solar cells without any temporal measurements. Using a Monte-Carlo model we simulate the dynamics within a thin film semiconductor and analyse the results using both pulsed-PLQY and TRPL methods. We find that pulsed-PLQY has a larger operational region and depends less on the excitation fuence than the TRPL approach. We validate these simulated results by preforming both measurements on organic thin films and reproduce the predicted trends. Pulsed-PLQY is then used to evaluate the diffusion length in a variety of technologically relevant organic semiconductors. It is found that the diffusion lengths in NFA's are much larger than in the benchmark fullerene and that this increase is driven by an increase in diffusivity.

physics.app-ph↗

arXiv2021

Quantifying the Excitonic Static Disorder in Organic Semiconductors

Organic semiconductors are disordered molecular solids and as a result, their internal charge dynamics and ultimately, the performance of the optoelectronic devices they constitute, are governed by energetic disorder. To ascertain how energetic disorder impacts charge generation, exciton transport, charge transport, and the performance of organic semiconductor devices, an accurate approach is first required to measure this critical parameter. In this work, we show that the static disorder has no relation with the so-called Urbach energy in organic semiconductors. Instead, it can be obtained from photovoltaic external quantum efficiency spectra at wavelengths near the absorption onset. We then present a detailed methodology, alongside a computational framework, for quantifying the static energetic disorder associated with singlet excitons. Moreover, the role of optical interference in this analysis is considered to achieve a high-accuracy quantification. Finally, the excitonic static disorder was quantified in several technologically-relevant donor-acceptor blends, including high-efficiency PM6:Y6.

physics.app-ph↗

arXiv2021

A Universal Urbach Rule for Disordered Organic Semiconductors

In crystalline semiconductors, absorption onset sharpness is characterized by temperature dependent Urbach energies. These energies quantify the static, structural disorder causing localized exponential-tail states, and dynamic disorder from electron-phonon scattering. Applicability of this exponential-tail model to disordered solids has been long debated. Nonetheless, exponential fittings are routinely applied to sub-gap absorption analysis of organic semiconductors. Herein, we elucidate the sub-gap spectral line-shapes of organic semiconductors and their blends by temperature-dependent quantum efficiency measurements. We find that sub-gap absorption due to singlet excitons is universally dominated by thermal broadening at low photon energies and the associated Urbach energy equals the thermal energy, regardless of static disorder. This is consistent with absorptions obtained from a convolution of Gaussian density of excitonic states weighted by Boltzmann-like thermally activated optical transitions. A simple model is presented that explains absorption line-shapes of disordered systems, and we also provide a strategy to determine the excitonic disorder energy. Our findings elaborate the meaning of the Urbach energy in molecular solids and relate the photo-physics to static disorder, crucial for optimizing organic solar cells for which we present a new radiative open-circuit voltage limit.

physics.optics↗

arXiv2021

Direct quantification of quasi-Fermi level splitting in organic semiconductor devices

Non-radiative losses to the open-circuit voltage are a primary factor in limiting the power conversion efficiency of organic photovoltaic devices. The dominant non-radiative loss is intrinsic to the active layer and can be determined from the quasi-Fermi level splitting (QFLS) and the radiative thermodynamic limit of the photovoltage. Quantification of the QFLS in thin film devices with low mobility is challenging due to the excitonic nature of photoexcitation and additional sources of nonradiative loss associated with the device structure. This work outlines an experimental approach based on electro-modulated photoluminescence, which can be used to directly measure the intrinsic non-radiative loss to the open-circuit voltage; thereby, quantifying the QFLS. Drift-diffusion simulations are carried out to show that this method accurately predicts the QFLS in the bulk of the device regardless of device-related non-radiative losses. State-of-the-art PM6:Y6-based organic solar cells are used as a model to test the experimental approach, and the QFLS is quantified and shown to be independent of device architecture. This work provides a method to quantify the QFLS of organic solar cells under operational conditions, fully characterizing the different contributions to the non-radiative losses of the open-circuit voltage. The reported method will be useful in not only characterizing and understanding losses in organic solar cells, but also other device platforms such as light-emitting diodes and photodetectors.

physics.app-ph↗

arXiv2020

Watching Space Charge Build up in an Organic Solar Cell

Space charge effects can significantly degrade charge collection in organic photovoltaics (OPVs), especially in thick-film devices. The two main causes of space charge are doping and imbalanced transport. Although these are completely different phenomena, they lead to the same voltage dependence of the photocurrent, making them difficult to distinguish. In this work, a method is introduced how the build-up of space charge due to imbalanced transport can be monitored in a real operating organic solar cell. The method is based on the reconstruction of quantum efficiency spectra and requires only optical input parameters that are straightforward to measure. This makes it suitable for the screening of new OPV materials. Furthermore, numerical and analytical means are derived to predict the impact of imbalanced transport on the charge collection. It is shown that when charge recombination is sufficiently reduced, balanced transport is not a necessary condition for efficient thick-film OPVs.

physics.app-ph↗

arXiv2019

Impact of a doping-induced space-charge region on the collection of photo-generated charge carriers in thin-film solar cells based on low-mobility semiconductors

Unintentional doping of the active layer is a source for lowered device performance in organic solar cells. The effect of doping is to induce a space-charge region within the active layer, generally resulting in increased recombination losses. In this work, the impact of a doping-induced space-charge region on the current-voltage characteristics of low-mobility solar cell devices has been clarified by means of analytical derivations and numerical device simulations. It is found that, in case of a doped active layer, the collection efficiency of photo-generated charge carriers is independent of the light intensity and exhibits a distinct voltage dependence, resulting in an apparent electric-field dependence of the photocurrent. Furthermore, an analytical expression describing the behavior of the photocurrent is derived. The validity of the analytical model is verified by numerical drift-diffusion simulations and demonstrated experimentally on solution-processed organic solar cells. Based on the theoretical results, conditions of how to overcome charge collection losses caused by doping are discussed. Furthermore, the presented analytical framework provides tools to distinguish between different mechanisms leading to voltage dependent photocurrents.

physics.app-ph↗

arXiv2019

On the effect of surface recombination in thin film solar cells, light emitting diodes and photodetectors

Radiative and non-radiative charge carrier recombination in thin-film diodes plays a key role in determining the efficiency of electronic devices made of next generation semiconductors such as organic, perovskite and nanocrystals. In this work, we show that lowering the bulk recombination does not necessarily result in enhanced performance metrics of electronic devices. From the perspective of charge carrier extraction and injection, the radiative limit of the open-circuit voltage of solar cells, noise current of photodetectors and lasing threshold of injection lasers cannot be improved if the contacts are not perfectly selective. A numerical drift-diffusion model is used to investigate the interplay between bulk recombination and surface recombination of minority carriers at the contacts in bipolar thin diode devices based on low-mobility semiconductors. The surface recombination becomes prominent in case of reduced bulk recombination strengths when non-selective contacts, i. e. contacts that are either metallic or have imperfect charge-selective interlayer, are employed. Finally, we derive analytical approximations for the case when diffusion-limited surface recombination of minority carriers at Ohmic contacts dominates the dark current. These results indicate that having perfectly selective contacts becomes crucial in systems with suppressed bulk recombination - a challenging requirement for future state-of-the-art thin-film solar cells, light-emitting devices and photodetectors made of next generation semiconductors.

physics.app-ph↗

arXiv2019

A Theoretical Perspective on Transient Photovoltage and Charge Extraction Techniques

Transient photovoltage (TPV) is a technique frequently used to determine charge carrier lifetimes in thin-film solar cells such as organic, dye sensitized and perovskite solar cells. As this lifetime is often incident light intensity dependent, its relevance to understanding the intrinsic properties of a photoactive material system as a material or device figure of merit has been questioned. To extract complete information on recombination dynamics, the TPV measurements are often performed in conjunction with charge extraction (CE) measurements, employed to determine the photo-generated charge carrier density and thereby the recombination rate constant and its order. In this communication, the underlying theory of TPV and CE is reviewed and expanded. Our theoretical findings are further solidified by numerical simulations and experiments on organic solar cells. We identify regimes of the open-circuit voltage within which accurate lifetimes and carrier densities can be determined with TPV and CE experiments. A wide range of steady-state light intensities is required in performing these experiments in order to identify their 'working dynamic range' from which the recombination kinetics in thin-film solar cells can be determined.

physics.app-ph↗

arXiv2019

Effect of Imbalanced Charge Transport on the Interplay of Surface and Bulk Recombination in Organic Solar Cells

Surface recombination has a major impact on the open-circuit voltage ($V_\text{oc}$) of organic photovoltaics. Here, we study how this loss mechanism is influenced by imbalanced charge transport in the photoactive layer. As a model system, we use organic solar cells with a two orders of magnitude higher electron than hole mobility. We find that small variations in the work function of the anode have a strong effect on the light intensity dependence of $V_\text{oc}$. Transient measurements and drift-diffusion simulations reveal that this is due to a change in the surface recombination rather than the bulk recombination. We use our numerical model to generalize these findings and determine under which circumstances the effect of contacts is stronger or weaker compared to the idealized case of balanced charge transport. Finally, we derive analytical expressions for $V_\text{oc}$ in the case that a pile-up of space charge is present due to highly imbalanced mobilities.

physics.app-ph↗

arXiv2017

Method for characterizing bulk recombination using photoinduced absorption

The influence of reaction order and trap-assisted recombination on continuous-wave photoinduced absorption measurements is clarified through analytical calculations and numerical simulations. The results reveal the characteristic influence of different trap distributions and enable distinguishing between shallow exponential and Gaussian distributions as well as systems dominated by direct recombination by analyzing the temperature dependence of the in-phase and quadrature signals. The identifying features are the intensity dependence of the in-phase at high intensity, $\textit{PA}_\text{I}\propto I^{γ_\text{HI}}$, and the frequency dependence of the quadrature at low frequency, $\textit{PA}_\text{Q}\propto ω^{γ_\text{LF}}$. For direct recombination $γ_\text{HI}$ and $γ_\text{LF}$ are temperature independent, for an exponential distribution they depend on the characteristic energy $E_\text{ch}$ as $γ_\text{HI}=1/(1+E_\text{ch}/kT)$ and $γ_\text{LF}=kT/E_\text{ch}$ while a Gaussian distribution shows $γ_\text{HI}$ and $γ_\text{LF}$ as functions of $I$ and $ω$, respectively.

cond-mat.mtrl-sci↗