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P. A. Pantaleon

Publications and source records attributed to P. A. Pantaleon.

2 recordsLinked to original sources

Enhanced Terahertz Thermoelectricity via Engineered van Hove Singularities and Nernst Effect in Moiré Superlattices

Thermoelectric materials, long explored for energy harvesting and thermal sensing, convert heat directly into electrical signals. Extending their application to the terahertz (THz) frequency range opens opportunities for low-noise, bias-free THz detection, yet conventional thermoelectrics lack the sensitivity required for practical devices. Thermoelectric coefficients can be strongly enhanced near van Hove singularities (VHS), though these are usually difficult to access in conventional materials. Here we show that moiré band engineering unlocks these singularities for THz optoelectronics. Using 2D moiré structures as a model system, we observe strong enhancement of the THz photothermoelectric response in monolayer and bilayer graphene superlattices when the Fermi level is tuned to band singularities. Applying a relatively small magnetic field further boosts the response through the THz-driven Nernst effect, a transverse thermoelectric current driven by the THz-induced temperature gradient. Our results establish moiré superlattices as a versatile platform for THz thermoelectricity and highlight engineered band structures as a route to high-performance THz optoelectronic devices.

cond-mat.mes-hall

Milli-Tesla Quantization enabled by Tuneable Coulomb Screening in Large-Angle Twisted Graphene

The electronic quality of graphene has improved significantly over the past two decades, revealing novel phenomena. However, even state-of-the-art devices exhibit substantial spatial charge fluctuations originating from charged defects inside the encapsulating crystals, limiting their performance. Here, we overcome this issue by assembling devices in which graphene is encapsulated by other graphene layers while remaining electronically decoupled from them via a large twist angle (~10-30°). Doping of the encapsulating graphene layer introduces strong Coulomb screening, maximized by the sub-nanometer distance between the layers, and reduces the inhomogeneity in the adjacent layer to just a few carriers per square micrometre. The enhanced quality manifests in Landau quantization emerging at magnetic fields as low as ~5 milli-Tesla and enables resolution of a small energy gap at the Dirac point. Our encapsulation approach can be extended to other two-dimensional systems, enabling further exploration of the electronic properties of ultrapure devices.

cond-mat.mes-hall