arXiv subjects

P. Asenov

Publications and source records attributed to P. Asenov.

5 recordsLinked to original sources

arXiv2025

A two-prong Approach to the Simulation of DC-RSD: TCAD and Spice

The DC-coupled Resistive Silicon Detectors (DCRSD) are the evolution of the AC-coupled RSD (RSD) design, both based on the Low-Gain Avalanche Diode (LGAD) technology. The DC-RSD design concept intends to address a few known issues present in RSDs (e.g., baseline fluctuation, long tail-bipolar signals) while maintaining their advantages (e.g., signal spreading, 100% fill factor). The simulation of DC-RSD presents several unique challenges linked to the complex nature of its design and the large pixel size. The defining feature of DC-RSD, charge sharing over distances that can be as large as a millimeter, represents a formidable challenge for Technology-CAD (TCAD), the standard simulation tool. To circumvent this problem, we have developed a mixed-mode approach to the DC-RSD simulation, which exploits a combination of two simulation tools: TCAD and Spice. Thanks to this hybrid approach, it has been possible to demonstrate that, according to the simulation, the key features of the RSD, excellent timing and spatial resolutions (few tens of picoseconds and few microns), are maintained in the DC-RSD design. In this work, we present the developed models and methodology, mainly showing the results of device-level numerical simulation, which have been obtained with the state-of-the-art Synopsys Sentaurus TCAD suite of tools. Such results will provide all the necessary information for the first batch of DC-RSD produced by Fondazione Bruno Kessler (FBK) foundry in Trento, Italy.

hep-ex↗

arXiv2023

Resistive Read-out in Thin Silicon Sensors with Internal Gain

Two design innovations, low-gain avalanche (Low-Gain Avalance Diode, LGAD) and resistive read-out (Resistive Silicon Detector, RSD), have brought strong performance improvements to silicon sensors. Large signals, due to the added gain mechanism, lead to improved temporal precision, while charge sharing, introduced by resistive read-out, allows for achieving excellent spatial resolution even with large pixels. LGAD- and RSD- based silicon sensors are now adopted, or considered, in several future experiments and are the basis for almost every next 4D-trackers. New results obtained with sensors belonging to the second FBK production of RSD (RSD2) demonstrate how a combined resolution of 30 ps and 30 \microns can be obtained with pixels as large as $1 \times 1 $ mm$^2$.

physics.ins-det↗

arXiv2022

Simulations of Silicon Radiation Detectors for High Energy Physics Experiments

Silicon radiation detectors are an integral component of current and planned collider experiments in high energy physics. Simulations of these detectors are essential for deciding operational configurations, for performing precise data analysis, and for developing future detectors. In this white paper, we briefly review the existing tools and discuss challenges for the future that will require research and development to be able to cope with the foreseen extreme radiation environments of the High Luminosity runs of the Large Hadron Collider and future hadron colliders like FCC-hh and SPPC.

physics.ins-det↗

arXiv2022

Solid State Detectors and Tracking for Snowmass

Tracking detectors are of vital importance for collider-based high energy physics (HEP) experiments. The primary purpose of tracking detectors is the precise reconstruction of charged particle trajectories and the reconstruction of secondary vertices. The performance requirements from the community posed by the future collider experiments require an evolution of tracking systems, necessitating the development of new techniques, materials and technologies in order to fully exploit their physics potential. In this article we summarize the discussions and conclusions of the 2022 Snowmass Instrumentation Frontier subgroup on Solid State and Tracking Detectors (Snowmass IF03).

physics.ins-det↗

arXiv2020

Fast calculation of capacitances in silicon sensors with 3D and 2D numerical solutions of the Laplace's equation and comparison with experimental data and TCAD simulations

We have developed a software for fast calculation of capacitances in planar silicon pixel and strip sensors, based on 3D and 2D numerical solutions of the Laplace's equation. The validity of the 2D calculations was checked with capacitances measurements on Multi-Geometry Silicon Strip Detectors (MSSD). The 3D calculations were tested by comparison with pixel sensors capacitance measurements from literature. In both cases the Laplace equation results were compared with simulations obtained from the TCAD Sentaurus suite. The developed software is a useful tool for fast estimation of interstrip, interpixel and backplane capacitances, saving computation time, as a first approximation before using a more sophisticated platform for more accurate results if needed.

physics.ins-det↗