Ultra-high-vacuum cluster tool for epitaxial synthesis and optical spectroscopy of reactive 2D materials
The large-area synthesis of high-crystalline-quality two-dimensional (2D) materials is at the core of novel material integration for semiconductor technology. This effort relies on developing fabrication and characterization techniques that can uncover the material's intrinsic properties by preserving its pristine conditions. In this article, we present an all ultra-high-vacuum cluster for the growth using molecular beam epitaxy of 2D semiconductors that are unstable under ambient conditions and optical spectroscopy using low temperature (20 K) photoluminescence and Raman scattering. The optical chamber of the setup provides micrometer scale spatial resolution and the ability to scan the entire wafer. The performance of its setup regarding spatial resolution, temperature control over a temperature range of 20-300 K using a closed-cycle cryostat and long-term preservation are demonstrated using as-grown post-transition metal monochalcogenides. Furthermore, we introduce a deconvolution-based algorithm to recover spatial information under vibration using a system-specific point-spread function. This enables in situ analysis of the structural and optoelectronic properties of as-grown materials in their pristine form, providing rich and reproducible feedback for both fundamental studies and the optimization of scalable 2D material growth toward integration in advanced devices.