arXiv subjects

P. B. Chen

Publications and source records attributed to P. B. Chen.

3 recordsLinked to original sources

arXiv2020

Surface-induced linear magnetoresistance in antiferromagnetic topological insulator MnBi2Te4

Through a thorough magneto-transport study of antiferromagnetic topological insulator MnBi2Te4 (MBT) thick films, a positive linear magnetoresistance (LMR) with a two-dimensional (2D) character is found in high perpendicular magnetic fields and temperatures up to at least 260 K. The nonlinear Hall effect further reveals the existence of high-mobility surface states in addition to the bulk states in MBT. We ascribe the 2D LMR to the high-mobility surface states of MBT, thus unveiling a transport signature of surface states in thick MBT films. A suppression of LMR near the Neel temperature of MBT is also noticed, which might suggest the gap opening of surface states due to the paramagnetic-antiferromagnetic phase transition of MBT. Besides these, the failure of the disorder and quantum LMR model in explaining the observed LMR indicates new physics must be invoked to understand this phenomenon.

cond-mat.mtrl-sci↗

arXiv2019

Anisotropic Landau level splitting and Lifshitz transition induced magnetoresistance enhancement in ZrTe5 crystals

Magneto-transport study has been performed in ZrTe5 single crystals. The observed Shubnikov-de Hass quantum oscillation at low temperature clearly demonstrates the existence of a nontrivial band with small effective mass in ZrTe5. Furthermore, we also revealed the 3D anisotropic nature of high-field Landau level splitting in ZrTe5, very different from the 2D behavior measured in previous transport studies. Besides these, an abnormal large enhancement of magnetoresistance appears at high temperatures, which is believed to arise from the Lifshitz transition induced two-carrier transport in ZrTe5. Our study provides more understanding of the physical properties of ZrTe5 and sheds light on potential application of ZrTe5 in spintronics.

cond-mat.mtrl-sci↗

arXiv2019

Surface-induced positive planar Hall effect in topological Kondo insulator SmB6 microribbons

Whether the surface states in SmB6 are topological is still a critical issue in the field of topological Kondo insulators. In the magneto-transport study of single crystalline SmB6 microribbons, we have revealed a positive planar Hall effect (PHE), the amplitude of which increases dramatically with decreasing temperatures but saturates below 5 K. This positive PHE is ascribed to the surface states of SmB6 and expected to arise from the anisotropy in lifting the topological protection from back-scattering by the in-plane magnetic field, thus suggesting the topological nature of surface states in SmB6. On the contrary, a negative PHE is observed for the bulk states at high temperatures, which is almost three orders of magnitudes weaker than the surface-induced positive PHE.

cond-mat.mes-hall↗