arXiv subjects

P. C. Mende

Publications and source records attributed to P. C. Mende.

3 recordsLinked to original sources

arXiv2017

Characterization of hexagonal boron nitride layers on nickel surfaces by low-energy electron microscopy

The thickness and interfacial geometry of hexagonal boron nitride (hBN) films grown by chemical vapor deposition on polycrystalline nickel foils is studied using low-energy electron microscopy (LEEM). The reflectivity of the electrons, measured over an energy range of 0 - 20 eV, reveals distinct minima and maxima. The measured data is compared with simulations based on a first-principles description of the electronic structure of the material. From this comparison, the number of hBN layers and the separation between the lowest hBN layer and the nickel surface is deduced. The coupling of interlayer states of the hBN to both image-potential and Shockley-type surface states of the nickel is discussed, and the dependence of the reflectivity spectra on the surface orientation of nickel grains is examined.

cond-mat.mes-hall↗

arXiv2014

Inelastic Effects in Low-Energy Electron Reflectivity of Two-dimensional Materials

A simple method is proposed for inclusion of inelastic effects (electron absorption) in computations of low-energy electron reflectivity (LEER) spectra. The theoretical spectra are formulated by matching of electron wavefunctions obtained from first-principles computations in a repeated vacuum-slab-vacuum geometry. Inelastic effects are included by allowing these states to decay in time in accordance with an imaginary term in the potential of the slab, and by mixing of the slab states in accordance with the same type of distribution as occurs in a free-electron model. LEER spectra are computed for various two-dimensional materials, including free-standing multilayer graphene, graphene on copper substrates, and hexagonal boron nitride (h-BN) on cobalt substrates.

cond-mat.mes-hall↗

arXiv2012

Graphene formed on SiC under various environments: Comparison of Si-face and C-face

The morphology of graphene on SiC {0001} surfaces formed in various environments including ultra-high vacuum, 1 atm of argon, and 10^-6 to 10^-4 Torr of disilane is studied by atomic force microscopy, low-energy electron microscopy, and Raman spectroscopy. The graphene is formed by heating the surface to 1100 - 1600 C, which causes preferential sublimation of the Si atoms. The argon atmosphere or the background of disilane decreases the sublimation rate so that a higher graphitization temperature is required, thus improving the morphology of the films. For the (0001) surface, large areas of monolayer-thick graphene are formed in this way, with the size of these areas depending on the miscut of the sample. Results on the (000-1) surface are more complex. This surface graphitizes at a lower temperature than for the (0001) surface and consequently the growth is more three-dimensional. In an atmosphere of argon the morphology becomes even worse, with the surface displaying markedly inhomogeneous nucleation, an effect attributed to unintentional oxidation of the surface during graphitization. Use of a disilane environment for the (000-1) surface is found to produce improved morphology, with relatively large areas of monolayer-thick graphene.

cond-mat.mtrl-sci↗