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P. Chaudouet

Publications and source records attributed to P. Chaudouet.

2 recordsLinked to original sources

Thulium and ytterbium-doped titanium oxide thin films deposited by ultrasonic spray pyrolysis

Thin films of thulium and ytterbium-doped titanium oxide were grown by metal-organic spray pyrolysis deposition from titanium(IV)oxide bis(acetylacetonate), thulium(III) tris(2,2,6,6-tetramethyl-3,5-heptanedionate) and ytterbium(III) tris(acetylacetonate). Deposition temperatures have been investigated from 300°C to 600°C. Films have been studied regarding their crystallity and doping quality. Structural and composition characterisations of TiO2:Tm,Yb were performed by electron microprobe, X-ray diffraction and Fourier transform infrared spectroscopy. The deposition rate can reach 0.8 \mum/h. The anatase phase of TiO2 was obtained after synthesis at 400°C or higher. Organic contamination at low deposition temperature is eliminated by annealing treatments.

cond-mat.mtrl-sci

Deposition of La2Zr2O7 Film by Chemical Solution Deposition

La2Zr2O7 (LZO) formation of bulk powders and of films by Chemical Solution Deposition (CSD) process have been studied using propionates. The treatment involved a one step cycle in the reducing forming gas (Ar-5%H2) to be compatible with Ni-5at%W RABITS. Large amount of residual carbon was found in LZO powders formed in these conditions (10 wt %). The volume fraction of the cube texture in LZO films on Ni-5at%w RABITS was found to be a function of the speed of the gas flown above sample. This phenomenon is discussed in considering the C deposited from the carbon-containing gases emitted during the pyrolysis of the precursor. Using proper conditions (950 ^\circC and the speed of gas of 6.8\times10^{-2} m/s), LZO films with good surface crystallinity could be obtained on Ni-5at%W RABITS as demonstrated by X-ray diffraction, electron backscattered diffraction and RHEED. The existence of residual carbon in oxide films is a common question to films deposited by CSD processes under reducing condition.

cond-mat.mtrl-sci