arXiv subjects

P. D. Altukhov

Publications and source records attributed to P. D. Altukhov.

3 recordsLinked to original sources

arXiv2008

Dense electron-hole plasma in silicon light emitting diodes

Efficient electroluminescence of silicon light emitting p-n diodes with different sizes and shapes is investigated at room temperature. High quantum efficiency of the diodes, a long linear dependence of the electroluminescence intensity on the diode current and a low energy shift of the emission line in electroluminescence spectra with increasing diode current are explained by the self-compression of injected electron-hole plasma into dense electron-hole plasma drops. Experiments on space scanning of the electroluminescence intensity of the diodes support this conclusion. The plasma self-compression is explained by existence of an attraction in electron-hole plasma, compensating the plasma pressure. A decrease of the semiconductor energy gap due to a local lattice overheating, produced by the plasma, and the exchange-correlation interaction could contribute to this attraction. The self-focusing of the injection current can accompany the plasma self-compression.

cond-mat.other↗

arXiv2008

The Kondo effect of surface excitons

A recombination radiation line of real excitons in dense two-dimensional electron gas at the [100] silicon surface is observed in luminescence spectra of metal-oxide-semiconductor (MOS) structures. A new effect of anisotropic paramagnetic reduction of the luminescence line indicates a strong influence of the Kondo correlations on electron paramagnetism of the excitons.

cond-mat.str-el↗

arXiv2008

The self-compression of injected electron-hole plasma in silicon

A recombination radiation line of electron-hole plasma, observed in electroluminescence spectra of tunneling silicon MOS diodes, has been investigated at the temperature > 300 K. The internal quantum efficiency of the luminescence, equal to 0.003, appears to be unexpectedly high. The spectral position of the luminescence line indicates, that a weak overheating of the diode by the diode current results in an anomalously strong reduction of the semiconductor energy gap inside the electron-hole plasma. A unique threshold optical hysteresis is observed in the luminescence intensity with changing diode current. These results are explained by condensation of injected electron-hole plasma into a dense state. A reduction of the semiconductor energy gap due to generation of phonons by the plasma is discussed as a reason of the plasma condensation. The plasma condensation is identified as the plasma self-compression.

cond-mat.other↗