arXiv subjects

P. F. Gomes

Publications and source records attributed to P. F. Gomes.

5 recordsLinked to original sources

arXiv2023

Theoretical study of the competition between folding and contact interactions on the properties of polymers using self-avoid random walk algorithm

The self-avoid random walk algorithm has been extensively used in the study of polymers. In this work we study the basic properties of the trajectories generated with this algorithm when two interactions are added to it: contact and folding interaction. These interactions represent the internal forces of the polymer as well as the effect of the solvent. When independently added to the algorithm, the contact interaction creates the compact phase while the folding one creates the extended phase. These are the consequences of the typical event of each interaction. On the other hand, when this typical event is avoided there is no established phase on the system. When simultaneously added, there is a competition between the interactions and the folding one is dominant over the contact one. The resulting phase is always the extended one with and without the contact interaction.

cond-mat.soft↗

arXiv2020

Phase diagrams of the ZGB model on random networks

In this work, we revisited the ZGB model in order to study the behavior of its phase diagram when two well-known random networks play the role of the catalytic surfaces: the Random Geometric Graph and the Erdös-Rényi network. The connectivity and, therefore, the average number of neighbors of the nodes of these networks can vary according to their control parameters, the neighborhood radius $α$ and the linking probability $p$, respectively. In addition, the catalytic reactions of the ZGB model are governed by the parameter $y$, the adsorption rate of carbon monoxide molecules on the catalytic surface. So, to study the phase diagrams of the model on both random networks, we carried out extensive steady-state Monte Carlo simulations in the space parameters ($y,α$) and ($y,p$) and showed that the continuous phase transition is greatly affected by the topological features of the networks while the discontinuous one remains present in the diagram throughout the interval of study.

cond-mat.stat-mech↗

arXiv2018

Damping of Landau levels in neutral graphene at low magnetic fields: A phonon Raman scattering study

Landau level broadening mechanisms in electrically neutral and quasineutral graphene were investigated through micro-magneto-Raman experiments in three different samples, namely, a natural single-layer graphene flake and a back-gated single-layer device, both deposited over Si/SiO2 substrates, and a multilayer epitaxial graphene employed as a reference sample. Interband Landau level transition widths were estimated through a quantitative analysis of the magnetophonon resonances associated with optically active Landau level transitions crossing the energy of the E_2g Raman-active phonon. Contrary to multilayer graphene, the single-layer graphene samples show a strong damping of the low-field resonances, consistent with an additional broadening contribution of the Landau level energies arising from a random strain field. This extra contribution is properly quantified in terms of a pseudomagnetic field distribution Delta_B = 1.0-1.7 T in our single-layer samples.

cond-mat.mtrl-sci↗

arXiv2017

Nematic Fluctuations and Phase Transitions in LaFeAsO: a Raman Scattering Study

Raman scattering experiments on LaFeAsO with splitted antiferromagnetic (T_AFM = 140 K) and tetragonal-orthorhombic (T_S = 155 K) transitions show a quasi-elastic peak (QEP) in B2g symmetry (2 Fe tetragonal cell) that fades away below ~T_AFM and is ascribed to electronic nematic fluctuations. A scaling of the reported shear modulus with the T-dependence of the QEP height rather than the QEP area indicates that magnetic degrees of freedom drive the structural transition. The large separation between T_S and T_AFM in LaFeAsO compared with their coincidence in BaFe2As2 manifests itself in slower dynamics of nematic fluctuations in the former.

cond-mat.str-el↗

arXiv2015

Mechanical strain in capped and uncapped self-assembled Ge/Si quantum dots

In this study we numerically calculate the spatial profile of mechanical strain on self-assembled germanium (Ge) quantum dots (QDs) grown on a silicon (Si) substrate. Although the topic has been exhaustively studied, interesting features have not been explained or even mentioned in the literature yet. We studied the effect of the cap layer considering two cases: capped QDs (where a Si cap is present above the Ge QDs) and uncapped QDs (where no Si is present above the Ge QDs). We observed that Ge in the capped QDs is more strained compared with the the uncapped QDs. This expected effect is attributed to the additional tension from the Si cap layer. However, the situation is opposite for the Si substrate, it is more strained in the uncapped QD because the Ge layer is less strained in this case. We also calculated the band-edge alignment for the electrons and holes.

cond-mat.mtrl-sci↗