arXiv subjects

P. Gambardella

Publications and source records attributed to P. Gambardella.

At least 19 recordsLinked to original sources

arXiv2026

Single Atom Magnets on Thermally Stable Adsorption Sites: Dy on NaCl(100)

We report magnetic bistability in single Dy atoms on NaCl(100) thin films. Individual Dy atoms substituting Na at the surface of the NaCl layer are thermally stable up to at least 300 K, display $4f^{9}$ occupancy, out-of-plane easy magnetization axis, and long spin relaxation time $T_1$ of about 10 s at 2.5 K; thereby they are the first single atom magnet on a thermally stable adsorption site. Dy atoms adsorbed onto the Cl and bridge sites display $4f^{10}$ occupancy. Dy on top-Cl exhibit magnetic hysteresis and a $T_1$ of 550 s at 0.3 T and 2.5 K. The observed slow magnetic relaxation of Dy on both adsorption sites introduces NaCl as an effective platform for single atom magnets.

cond-mat.mtrl-sci↗

arXiv2023

Localized Magnetic States of Fe, Co, and Ni Impurities on Alkali Metal Films

X-ray absorption spectroscopy (XAS) and x-ray magnetic circular dichroism (XMCD) have been used to study transition metal impurities on K and Na films. The multiplet structure of the XAS spectra indicates that Fe, Co, and Ni have localized atomic ground states with predominantly d7, d8, and d9 character, respectively. XMCD shows that the localized impurity states possess large, atomiclike, magnetic orbital moments that are progressively quenched as clusters are formed. Ni impurities on Na films are found to be nonmagnetic, with a strongly increased d10 character of the impurity state. The results show that the high magnetic moments of transition metals in alkali hosts originate from electron localization.

cond-mat.mtrl-sci↗

arXiv2022

Control of field- and current-driven magnetic domain wall motion by exchange-bias in Cr2O3/Co/Pt trilayers

We investigate the motion of magnetic domain walls driven by magnetic fields and current-driven spin-orbit torques in an exchange-biased system with perpendicular magnetization. We consider Cr2O3/Co/Pt trilayers as model system, in which the magnetization of the Co layer can be exchanged-biased out-of-plane or in-plane depending on the field cooling direction. In field-driven experiments, the in-plane exchange bias favors the propagation of the domain walls with internal magnetization parallel to the exchange bias field. In current-driven experiments, the domain walls propagate along the current direction, but the domain wall velocity increases and decreases symmetrically (anti-symmetrically) for both current polarities when the exchange bias is parallel (perpendicular) to the current line. At zero external field, the exchange bias modifies the velocity of current-driven domain wall motion by a factor of ten. We also find that the exchange bias remains stable under external fields up to 15 kOe and ns-long current pulses with current density up to 3.5x10^12 A/m^2. Our results demonstrate versatile control of the domain wall motion by exchange bias, which is relevant to achieve field-free switching of the magnetization in perpendicular systems and current-driven manipulation of domain walls velocity in spintronic devices.

cond-mat.mtrl-sci↗

arXiv2022

Scanning nitrogen-vacancy center magnetometry in large in-plane magnetic fields

Scanning magnetometry with nitrogen-vacancy (NV) centers in diamond has emerged as a powerful microscopy for studying weak stray field patterns with nanometer resolution. Due to the internal crystal anisotropy of the spin defect, however, external bias fields -- critical for the study of magnetic materials -- must be applied along specific spatial directions. In particular, the most common diamond probes made from {100}-cut diamond only support fields at an angle of $θ= 55^\circ$ from the surface normal. In this paper, we report fabrication of scanning diamond probes from {110}-cut diamond where the spin anisotropy axis lies in the scan plane ($θ=90^\circ$). We show that these probes retain their sensitivity in large in-plane fields and demonstrate scanning magnetometry of the domain pattern of Co-NiO films in applied fields up to 40 mT. Our work extends scanning NV magnetometry to the important class of materials that require large in-plane fields.

cond-mat.mtrl-sci↗

arXiv2021

Co-existence of Bloch and Neel walls in a collinear antiferromagnet

We resolve the domain-wall structure of the model antiferromagnet $\text{Cr}_2\text{O}_3$ using nanoscale scanning diamond magnetometry and second-harmonic-generation microscopy. We find that the 180$^\circ$ domain walls are predominantly Bloch-like, and can co-exist with Néel walls in crystals with significant in-plane anisotropy. In the latter case, Néel walls that run perpendicular to a magnetic easy axis acquire a well-defined chirality. We further report quantitative measurement of the domain-wall width and surface magnetization. Our results provide fundamental input and an experimental methodology for the understanding of domain walls in pure, intrinsic antiferromagnets, which is relevant to achieve electrical control of domain-wall motion in antiferromagnetic compounds.

cond-mat.mes-hall↗

arXiv2021

Real-time Hall-effect detection of current-induced magnetization dynamics in ferrimagnets

Measurements of the transverse Hall resistance are widely used to investigate electron transport, magnetization phenomena, and topological quantum states. Owing to the difficulty of probing transient changes of the transverse resistance, the vast majority of Hall effect experiments are carried out in stationary conditions using either dc or ac currents. Here we present an approach to perform time-resolved measurements of the transient Hall resistance during current-pulse injection with sub-nanosecond temporal resolution. We apply this technique to investigate in real-time the magnetization reversal caused by spin-orbit torques in ferrimagnetic GdFeCo dots. Single-shot Hall effect measurements show that the current-induced switching of GdFeCo is widely distributed in time and characterized by significant activation delays, which limit the total switching speed despite the high domain-wall velocity typical of ferrimagnets. Our method applies to a broad range of current-induced phenomena and can be combined with non-electrical excitations to perform pump-probe Hall effect measurements.

cond-mat.mes-hall↗

arXiv2020

Systematic study of nonmagnetic resistance changes due to electrical pulsing in single metal layers and metal/antiferromagnet bilayers

Intense current pulses are often required to operate microelectronic and spintronic devices. Notably, strong current pulses have been shown to induce magnetoresistance changes attributed to domain reorientation in antiferromagnet/heavy metal bilayers and non-centrosymmetric antiferromagnets. In such cases, nonmagnetic resistivity changes may dominate over signatures of antiferromagnetic switching. We report systematic measurements of the current-induced changes of the transverse and longitudinal resistance of Pt and Pt/NiO layers deposited on insulating substrates, namely Si/SiO$_2$, Si/Si$_3$N$_4$, and Al$_2$O$_3$. We identify the range of pulse amplitude and length that can be used without affecting the resistance and show that it increases with the device size and thermal diffusivity of the substrate. No significant difference is observed in the resistive response of Pt and NiO/Pt devices, thus precluding evidence on the switching of antiferromagnetic domains in NiO. The variation of the transverse resistance is associated to a thermally-activated process in Pt that decays following a double exponential law with characteristic timescales of a few minutes to hours. We use a Wheatstone bridge model to discriminate between positive and negative resistance changes, highlighting competing annealing and electromigration effects. Depending on the training of the devices, the transverse resistance can either increase or decrease between current pulses. Further, we elucidate the origin of the nonmonotonic resistance baseline, which we attribute to training effects combined with the asymmetric distribution of the current. These results provide insight into the origin of current-induced resistance changes in metal layers and a guide to minimize nonmagnetic artifacts in switching experiments of antiferromagnets.

cond-mat.mtrl-sci↗

arXiv2020

X-ray detection of ultrashort spin current pulses in synthetic antiferromagnets

We explore the ultrafast generation of spin currents in magnetic multilayer samples by applying fs laser pulses to one layer and measuring the magnetic response in the other layer by element-resolved x-ray spectroscopy. In Ni(5~nm)/Ru(2~nm)/Fe(4~nm), the Ni and Fe magnetization directions couple antiferromagnetically due to the RKKY interaction, but may be oriented parallel through an applied magnetic field. After exciting the top Ni layer with a fs laser pulse, we find that also the Fe layer underneath demagnetizes, with a $4.1 \pm 1.9$\% amplitude difference between parallel and antiparallel orientation of the Ni and Fe magnetizations. We attribute this difference to the influence of a spin current generated by the fs laser pulse that transfers angular momentum from the Ni into the Fe layer. Our results confirm that superdiffusive spin transport plays a role in determining the sub-ps demagnetization dynamics of synthetic antiferromagnetic layers, but also evidence large depolarization effects due to hot electron dynamics, which are independent of the relative alignment of the magnetization in Ni and Fe.

cond-mat.mes-hall↗

arXiv2019

Current-induced fragmentation of antiferromagnetic domains

Electrical and optical pulsing allow for manipulating the order parameter and magnetoresistance of antiferromagnets, opening novel prospects for digital and analog data storage in spintronic devices. Recent experiments in CuMnAs have demonstrated giant resistive switching signals in single-layer antiferromagnetic films together with analog switching and relaxation characteristics relevant for neuromorphic computing. Here we report simultaneous electrical pulsing and scanning NV magnetometry of antiferromagnetic domains in CuMnAs performed using a pump-probe scheme. We observe a nano-scale fragmentation of the antiferromagnetic domains, which is controlled by the current amplitude and independent on the current direction. The fragmented antiferromagnetic state conserves a memory of the pristine domain pattern, towards which it relaxes. Domain fragmentation coexists with permanent switching due to the reorientation of the antiferromagnetic moments. Our simultaneous imaging and resistance measurements show a correlation between the antiferromagnetic domain fragmentation and the largest resistive switching signals in CuMnAs.

cond-mat.mtrl-sci↗

arXiv2019

Single-atom electron paramagnetic resonance in a scanning tunneling microscope driven by a radiofrequency antenna at 4 K

Combining electron paramagnetic resonance (EPR) with scanning tunneling microscopy (STM) enables detailed insight into the interactions and magnetic properties of single atoms on surfaces. A requirement for EPR-STM is the efficient coupling of microwave excitations to the tunnel junction. Here, we achieve a coupling efficiency of the order of unity by using a radiofrequency antenna placed parallel to the STM tip, which we interpret using a simple capacitive-coupling model. We further demonstrate the possibility to perform EPR-STM routinely above 4 K using amplitude as well as frequency modulation of the radiofrequency excitation. We directly compare different acquisition modes on hydrogenated Ti atoms and highlight the advantages of frequency and magnetic field sweeps as well as amplitude and frequency modulation in order to maximize the EPR signal. The possibility to tune the microwave-excitation scheme and to perform EPR-STM at relatively high temperature and high power opens this technique to a broad range of experiments, ranging from pulsed EPR spectroscopy to coherent spin manipulation of single atom ensembles.

cond-mat.mes-hall↗

arXiv2019

X-ray spectroscopy of current-induced spin-orbit torques and spin accumulation in Pt/3d transition metal bilayers

An electric current flowing in Pt, a material with strong spin-orbit coupling, leads to spins accumulating at the interfaces by virtue of the spin Hall effect and interfacial charge-spin conversion. We measure the influence of these interfacial magnetic moments onto adjacent 3d transition metal layers by x-ray absorption spectroscopy and x-ray magnetic circular dichroism in a quantitative and element-selective way, with sensitivity below $10^{-5}~μ_B$ per atom. In Pt(6 nm)/Co(2.5 nm), the accumulated spins cause a deviation of the Co magnetization direction, which corresponds to an effective spin-Hall angle of 0.08. The spin and orbital magnetic moments of Co are affected in equal proportion by the absorption of the spin current, showing that the transfer of orbital momentum from the recently predicted orbital Hall effect is either below our detection limit, or not directed to the 3d states of Co. For Pt/NM (NM = Ti, Cr, Cu), we find upper limits for the amount of injected spins corresponding to about $3\times 10^{-6}~μ_B$ per atom.

cond-mat.mtrl-sci↗

arXiv2019

Current-induced spin-orbit torques in ferromagnetic and antiferromagnetic systems

Spin-orbit coupling in inversion-asymmetric magnetic crystals and structures has emerged as a powerful tool to generate complex magnetic textures, interconvert charge and spin under applied current, and control magnetization dynamics. Current-induced spin-orbit torques mediate the transfer of angular momentum from the lattice to the spin system, leading to sustained magnetic oscillations or switching of ferromagnetic as well as antiferromagnetic structures. The manipulation of magnetic order, domain walls and skyrmions by spin-orbit torques provides evidence of the microscopic interactions between charge and spin in a variety of materials and opens novel strategies to design spintronic devices with potentially high impact in data storage, nonvolatile logic, and magnonic applications. This paper reviews recent progress in the field of spin-orbitronics, focusing on theoretical models, material properties, and experimental results obtained on bulk noncentrosymmetric conductors and multilayer heterostructures, including metals, semiconductors, and topological insulator systems. Relevant aspects for improving the understanding and optimizing the efficiency of nonequilibrium spin-orbit phenomena in future nanoscale devices are also discussed.

cond-mat.mes-hall↗

arXiv2018

SOT-MRAM 300mm integration for low power and ultrafast embedded memories

We demonstrate for the first time full-scale integration of top-pinned perpendicular MTJ on 300 mm wafer using CMOS-compatible processes for spin-orbit torque (SOT)-MRAM architectures. We show that 62 nm devices with a W-based SOT underlayer have very large endurance (> 5x10^10), sub-ns switching time of 210 ps, and operate with power as low as 300 pJ.

cond-mat.mes-hall↗

arXiv2017

THz electrical writing speed in an antiferromagnetic memory

The speed of writing of state-of-the-art ferromagnetic memories is physically limited by an intrinsic GHz threshold. Recently, an alternative research direction has been initiated by realizing memory devices based on antiferromagnets in which spin directions periodically alternate from one atomic lattice site to the next. In our work we experimentally demonstrate at room temperature that the speed of reversible electrical writing in a memory device can be scaled up to THz using an antiferromagnet. Efficient current-induced spin-torque mechanism is responsible for the switching in our memory devices throughout the twelve orders of magnitude range of writing speeds from Hz to THz. Our work opens the path towards the development of memory-logic technology reaching the elusive THz band.

physics.app-ph↗

arXiv2016

Antiferromagnetic multi-level memory cell

Antiferromagnets (AFs) are remarkable magnetically ordered materials that due to the absence of a net magnetic moment do not generate dipolar fields and are insensitive to external magnetic field perturbations. However, it has been notoriously difficult to control antiferromagnetic moments by any practical means suitable for device applications. This has left AFs over their hundred years history virtually unexploited and only poorly explored, in striking contrast to the thousands of years of fascination and utility of ferromagnetism. Very recently it has been predicted and experimentally confirmed that relativistic spin-orbit torques can provide the means for efficient electrical control of an AF. Here we place the emerging field of antiferromagnetic spintronics on the map of non-volatile solid state memory technologies. We demonstrate the complete write/store/read functionality in an antiferromagnetic CuMnAs bit cell embedded in a standard printed circuit board communicating with a computer via a USB interface. We show that the elementary-shape bit cells fabricated from a single-layer AF are electrically written on timescales ranging from milliseconds to nanoseconds and we demonstrate their deterministic multi-level switching. The multi-level cell characteristics, reflecting series of reproducible, electrically controlled domain reconfigurations, allow us to integrate memory and signal counter functionalities within the bit cell.

cond-mat.mtrl-sci↗

arXiv2015

Comparing XMCD and DFT with STM spin excitation spectroscopy for Fe and Co adatoms on Cu$_{2}$N/Cu(100)

We report on the magnetic properties of Fe and Co adatoms on a Cu$_{2}$N/Cu(100)-$c(2 \times 2)$ surface investigated by x-ray magnetic dichroism measurements and density functional theory (DFT) calculations including the local coulomb interaction. We compare these results with properties formerly deduced from STM spin excitation spectroscopy (SES) performed on the individual adatoms. In particular we focus on the values of the local magnetic moments determined by XMCD compared to the expectation values derived from the description of the SES data.The angular dependence of the projected magnetic moments along the magnetic field, as measured by XMCD, can be understood on the basis of the SES Hamiltonian. In agreement with DFT, the XMCD measurements show large orbital contributions to the total magnetic moment for both magnetic adatoms.

cond-mat.mes-hall↗

arXiv2015

Spin-orbit torque driven chiral magnetization reversal in ultrathin nanostructures

We show that the spin-orbit torque induced magnetization switching in nanomagnets presenting Dzyaloshinskii-Moriya (DMI) interaction is governed by a chiral domain nucleation at the edges. The nucleation is induced by the DMI and the applied in-plane magnetic field followed by domain wall propagation. Our micromagnetic simulations show that the DC switching current can be defined as the edge nucleation current, which decreases strongly with increasing amplitude of the DMI. This description allows us to build a simple analytical model to quantitatively predict the switching current. We find that domain nucleation occurs down to a lateral size of 15 nm, defined by the length-scale of the DMI, beyond which the reversal mechanism approaches a macrospin behavior. The switching is deterministic and bipolar.

cond-mat.mtrl-sci↗

arXiv2015

Interplay between Orbital Magnetic Moment and Crystal Field Symmetry: Fe atoms on MgO

We combine density functional theory, x-ray magnetic circular dichroism, multiplet calculations, and scanning tunneling spectroscopy to assess the magnetic properties of Fe atoms adsorbed on a thin layer of MgO(100) on Ag(100). Despite the strong axial field due to the O ligand, the weak cubic field induced by the four-fold coordination to Mg atoms entirely quenches the first order orbital moment. This is in marked contrast to Co, which has an out-of-plane orbital moment of $L_z = \pm 3$ that is protected from mixing in a cubic ligand field. The spin-orbit interaction restores a large fraction of the Fe orbital moment leading a zero-field splitting of $14.0 \pm 0.3$~meV, the largest value reported for surface adsorbed Fe atoms.

cond-mat.mes-hall↗