arXiv subjects

P. Ganesh

Publications and source records attributed to P. Ganesh.

At least 19 recordsLinked to original sources

arXiv2026

Diffusion Quantum Monte Carlo Benchmark of Interlayer Binding and Charge Redistribution in Chemically Distinct Two-Dimensional Van Der Waals Bilayers

Interlayer interactions in two-dimensional materials can generate emergent phenomena absent in their constituent monolayers, including unconventional magnetic order, multiferroicity, and topological magnetic phases. Predicting such emergent behavior requires simultaneously resolving long-range dispersion, short-range orbital hybridization, and electronic correlation interactions that are intrinsically nonlocal and many-body and remain challenging even for advanced density-functional approximations. Here we establish a systematically controlled many-body benchmark for diverse bilayer materials using diffusion Monte Carlo (DMC), spanning single-sheet materials, transition-metal dichalcogenides, and magnetic transition-metal halides. We obtain equilibrium separations, binding energetics, interlayer vibrational modes, and charge redistribution, finding excellent agreement with available experiments while revealing systematic and property-dependent failures across widely used semilocal, meta-GGA, and dispersion-corrected density functionals. Beyond energetics, DMC resolves subtle interlayer charge rearrangements, particularly leading to long-ranged dipolar tails in magnetic Cr trihalides that survive well beyond the regime where semilocal DFT predicts appreciable interlayer polarization, providing a many-body basis for understanding interlayer-coupled ferroic and magnetic phenomena. The resulting energies, response properties, and high-accuracy electron densities constitute a transferable benchmark for developing next-generation density functionals. Finally, we provide a scalable high-performance-computing workflow that enables systematic expansion of many-body benchmark datasets across emerging families of layered quantum materials by the scientific community.

cond-mat.mtrl-sci↗

arXiv2025

pyRMG: A Framework for High-Throughput, Large-Cell DFT Calculations on Supercomputers

Exascale computing delivers the raw power to simulate ever larger and more chemically realistic systems, but realizing this potential requires codes that can efficiently use thousands of processors. Our real-space multigrid (RMG) density functional theory (DFT) code's grid-decomposition approach scales nearly linearly with the number of GPUs, even for simulations exceeding thousands of atoms. This scalability makes RMG a compelling tool for high-throughput DFT studies of materials that would otherwise be bottlenecked in other codes (for example, by global Fast Fourier Transforms in plane-wave DFT). However, the limited workflow infrastructure for RMG has thus far constrained its adoption to a small user community. In this work, we present pyRMG, a Python package designed to streamline the setup and execution of RMG DFT calculations. Built on the pymatgen and ASE computational materials science Python packages, pyRMG automates input generation and convergence checking, and integrates with modern job schedulers (e.g., Flux) on leadership-class platforms such as Frontier and Perlmutter. We demonstrate pyRMG for a high-throughput study of interfacial strain and twist-angle effects in lattice-matched, 2D Bi$_2$Se$_3$/NbSe$_2$ heterostructures, which offers chemical insights into this system and shows that RMG-based workflows can converge with limited user intervention.

cond-mat.mtrl-sci↗

arXiv2025

Automated Construction of Artificial Lattice Structures with Designer Electronic States

Manipulating matter with a scanning tunneling microscope (STM) enables creation of atomically defined artificial structures that host designer quantum states. However, the time-consuming nature of the manipulation process, coupled with the sensitivity of the STM tip, constrains the exploration of diverse configurations and limits the size of designed features. In this study, we present a reinforcement learning (RL)-based framework for creating artificial structures by spatially manipulating carbon monoxide (CO) molecules on a copper substrate using the STM tip. The automated workflow combines molecule detection and manipulation, employing deep learning-based object detection to locate CO molecules and linear assignment algorithms to allocate these molecules to designated target sites. We initially perform molecule maneuvering based on randomized parameter sampling for sample bias, tunneling current setpoint and manipulation speed. This dataset is then structured into an action trajectory used to train an RL agent. The model is subsequently deployed on the STM for real-time fine-tuning of manipulation parameters during structure construction. Our approach incorporates path planning protocols coupled with active drift compensation to enable atomically precise fabrication of structures with significantly reduced human input while realizing larger-scale artificial lattices with desired electronic properties. Using our approach, we demonstrate the automated construction of an extended artificial graphene lattice and confirm the existence of characteristic Dirac point in its electronic structure. Further challenges to RL-based structural assembly scalability are discussed.

cond-mat.mtrl-sci↗

arXiv2024

Modeling Kinetic Effects of Charged Vacancies on Electromechanical Responses of Ferroelectrics: Rayleighian Approach

Understanding time-dependent effects of charged vacancies on electromechanical responses of materials is at the forefront of research for designing materials exhibiting metal-insulator transition, and memresistive behavior. A Rayleighian approach is used to develop a model for studying the non-linear kinetics of reaction leading to generation of vacancies and electrons by the dissociation of vacancy-electron pairs. Also, diffusion and elastic effects of charged vacancies are considered to model polarization-electric potential and strain-electric potential hysteresis loops. The model captures multi-physics phenomena by introducing couplings among polarization, electric potential, stress, strain, and concentrations of charged (multivalent) vacancies and electrons (treated as classical negatively charged particles), where the concentrations can vary due to association-dissociation reactions. Derivation of coupled time-dependent equations based on the Rayleighian approach is presented. Three limiting cases of the governing equations are considered highlighting effects of 1) non-linear reaction kinetics on the generation of charged vacancies and electrons, 2) the Vegard's law (i.e., the concentration-dependent local strain) on asymmetric strain-electric potential relations, and 3) coupling between a fast component and the slow component of the net polarization on the polarization-electric field relations. The Rayleighian approach discussed in this work should pave the way for developing a multi-scale modeling framework in a thermodynamically consistent manner while capturing multi-physics phenomena in ferroelectric materials.

cond-mat.mtrl-sci↗

arXiv2023

Scale-free switching of polarization in the layered ferroelectric material CuInP$_2$S$_6$

Using first-principles calculations we model the out-of-plane switching of local dipoles in CuInP$_2$S$_6$ (CIPS) that are largely induced by Cu off-centering. Previously, a coherent switching of polarization via a quadruple-well potential was proposed for these materials. In the super-cells we considered, we find multiple structures with similar energies but with different local polar order. Our results suggest that the individual dipoles are weakly coupled in-plane and under an electric field at very low temperatures these dipoles in CIPS should undergo incoherent disordered switching. The barrier for switching is determined by the single Cu-ion switching barrier. This in turn suggests a scale-free polarization with a switching barrier of $\sim$ 203.6-258.0 meV, a factor of five smaller than that of HfO$_2$ (1380 meV) a prototypical scale-free ferroelectric. The mechanism of polarization switching in CIPS is mediated by the switching of each weakly interacting dipole rather than the macroscopic polarization itself as previously hypothesized. These findings reconcile prior observations of a quadruple well with sloping hysteresis loops, large ionic conductivity even at 250~K well below the Curie temperature (315~K), and a significant wake-up effects where the macroscopic polarization is slow to order and set-in under an applied electric field. We also find that computed piezoelectric response and the polarization show a linear dependence on the local dipolar order. This is consistent with having scale-free polarization and other polarization-dependent properties and opens doors for engineering tunable metastability by-design in CIPS (and related family of materials) for neuromorphic applications.

cond-mat.mtrl-sci↗

arXiv2022

Atomic structure generation from reconstructing structural fingerprints

Data-driven machine learning methods have the potential to dramatically accelerate the rate of materials design over conventional human-guided approaches. These methods would help identify or, in the case of generative models, even create novel crystal structures of materials with a set of specified functional properties to then be synthesized or isolated in the laboratory. For crystal structure generation, a key bottleneck lies in developing suitable atomic structure fingerprints or representations for the machine learning model, analogous to the graph-based or SMILES representations used in molecular generation. However, finding data-efficient representations that are invariant to translations, rotations, and permutations, while remaining invertible to the Cartesian atomic coordinates remains an ongoing challenge. Here, we propose an alternative approach to this problem by taking existing non-invertible representations with the desired invariances and developing an algorithm to reconstruct the atomic coordinates through gradient-based optimization using automatic differentiation. This can then be coupled to a generative machine learning model which generates new materials within the representation space, rather than in the data-inefficient Cartesian space. In this work, we implement this end-to-end structure generation approach using atom-centered symmetry functions as the representation and conditional variational autoencoders as the generative model. We are able to successfully generate novel and valid atomic structures of sub-nanometer Pt nanoparticles as a proof of concept. Furthermore, this method can be readily extended to any suitable structural representation, thereby providing a powerful, generalizable framework towards structure-based generation.

cond-mat.mtrl-sci↗

arXiv2022

Anharmonic stabilization of ferrielectricity in CuInP$_2$Se$_6$

Using first-principles calculations and group-theory based models, we study the stabilization of ferrielectricity (FiE) in CuInP$_2$Se$_6$. We find that the FiE ground state is stabilized by a large anharmonic coupling between the polar mode and a fully symmetric Raman-active mode. Our results open possibilities for controlling the single-step switching barrier for polarization by tuning the Raman-active mode. We discuss the implications of our findings in the context of designing next-generation optoelectronic devices that can overcome the voltage-time dilemma.

cond-mat.mtrl-sci↗

arXiv2021

Enhancement of functional properties of V$_{0.6}$Ti$_{0.4}$ alloy superconductor by the addition of yttrium

We show here that the yttrium is immiscible and precipitates with various sizes in the body centred cubic V$_{0.6}$Ti$_{0.4}$ alloy superconductor. The number and size of the precipitates are found to depend on the amount of yttrium added. Precipitates with various sizes up to 30~$\mu$m are found in the V$_{0.6}$Ti$_{0.4}$ alloy containing 5 at.\% yttrium. The large amount of line disorders generated by the addition of yttrium in this alloy are found to be effective in pinning the magnetic flux lines. While the superconducting transition temperature increases with the increasing amount of yttrium in the V$_{0.6}$Ti$_{0.4}$ alloy, the critical current density is maximum for the alloy containing 2 at. \% yttrium, where it is more than 7.5 times the parent alloy in fields higher than 1~T. We found that the effectiveness of each type of defect in pinning the flux lines is dependent on the temperature and the applied magnetic filed.

cond-mat.supr-con↗

arXiv2021

Inverse design of two-dimensional materials with invertible neural networks

The ability to readily design novel materials with chosen functional properties on-demand represents a next frontier in materials discovery. However, thoroughly and efficiently sampling the entire design space in a computationally tractable manner remains a highly challenging task. To tackle this problem, we propose an inverse design framework (MatDesINNe) utilizing invertible neural networks which can map both forward and reverse processes between the design space and target property. This approach can be used to generate materials candidates for a designated property, thereby satisfying the highly sought-after goal of inverse design. We then apply this framework to the task of band gap engineering in two-dimensional materials, starting with MoS2. Within the design space encompassing six degrees of freedom in applied tensile, compressive and shear strain plus an external electric field, we show the framework can generate novel, high fidelity, and diverse candidates with near-chemical accuracy. We extend this generative capability further to provide insights regarding metal-insulator transition, important for memristive neuromorphic applications among others, in MoS2 which is not otherwise possible with brute force screening. This approach is general and can be directly extended to other materials and their corresponding design spaces and target properties.

cond-mat.mtrl-sci↗

arXiv2021

Large Gap Quantum Anomalous Hall Effect in a Type-I Heterostructure Between a Magnetically Doped Topological Insulator and Antiferromagnetic Insulator

Heterostructures between topological insulators (TI) and magnetic insulators represent a pathway to realize the quantum anomalous Hall effect (QAHE). Using density functional theory based systematic screening and investigation of thermodynamic, magnetic and topological properties of heterostructures, we demonstrate that forming a type-I heterostructure between a wide gap antiferromagnetic insulator Cr$_2$O$_3$ and a TI-film, such as Sb$_2$Te$_3$, can lead to pinning of the Fermi-level at the center of the gap, even when magnetically doped. Cr-doping in the heterostructure increases the gap to $\sim$ 64.5 meV, with a large Zeeman energy from the interfacial Cr dopants, thus overcoming potential metallicity due to band bending effects. By fitting the band-structure around the Fermi-level to a 4-band k.p model Hamiltonian, we show that Cr doped Sb$_2$Te$_3$/Cr$_2$O$_3$ is a Chern insulator with a Chern number C = -1. Transport calculations further show chiral edge-modes localized at the top/bottom of the TI-film to be the dominant current carriers in the material. Our predictions of a large interfacial magnetism due to Cr-dopants, that coupled antiferromagnetically to the AFM substrate is confirmed by our polarised neutron reflectometry measurements on MBE grown Cr doped Sb$_2$Te$_3$/Cr$_2$O$_3$ heterostructures, and is consistent with a positive exchange bias measured in such systems recently. Consequently, Cr doped Sb$_2$Te$_3$/Cr$_2$O$_3$ heterostructure represents a promising platform for the development of functional topological magnetic devices, with high tunability.

cond-mat.mtrl-sci↗

arXiv2020

Doped NiO: the Mottness of a charge transfer insulator

The evolution of the electronic structures of strongly correlated insulators with doping has long been a central fundamental question in condensed matter physics; it is also of great practical relevance for applications. We have studied the evolution of NiO under hole {\em and} electron doping using high-quality thin film and a wide range of experimental and theoretical methods. The evolution is in both cases very smooth with dopant concentration. The band gap is asymmetric under electron and hole doping, consistent with a charge-transfer insulator picture, and is reduced faster under hole than electron doping. For both electron and hole doping, occupied states are introduced at the top of the valence band. The formation of deep donor levels under electron doping and the inability to pin otherwise empty states near the conduction band edge is indicative that local electron addition and removal energies are dominated by a Mott-like Hubbard $U$-interaction even though the global bandgap is predominantly a charge-transfer type gap.

cond-mat.str-el↗

arXiv2018

Doping a Bad Metal: Origin of Suppression of Metal-Insulator Transition in Non-Stoichiometric VO$_2$

Rutile ($R$) phase VO$_2$ is a quintessential example of a strongly correlated bad-metal, which undergoes a metal-insulator transition (MIT) concomitant with a structural transition to a V-V dimerized monoclinic phase below T$_{MIT} \sim 340K$. It has been experimentally shown that one can control this transition by doping VO$_2$. In particular, doping with oxygen vacancies ($V_O$) has been shown to completely suppress this MIT {\em without} any structural transition. We explain this suppression by elucidating the influence of oxygen-vacancies on the electronic-structure of the metallic $R$ phase VO$_2$, explicitly treating strong electron-electron correlations using dynamical mean-field theory (DMFT) as well as diffusion Monte Carlo (DMC) flavor of quantum Monte Carlo (QMC) techniques. We show that $V_O$'s tend to change the V-3$d$ filling away from its nominal half-filled value, with the $e_{g}^π$ orbitals competing with the otherwise dominant $a_{1g}$ orbital. Loss of this near orbital polarization of the $a_{1g}$ orbital is associated with a weakening of electron correlations, especially along the V-V dimerization direction. This removes a charge-density wave (CDW) instability along this direction above a critical doping concentration, which further suppresses the metal-insulator transition. Our study also suggests that the MIT is predominantly driven by a correlation-induced CDW instability along the V-V dimerization direction.

cond-mat.mtrl-sci↗

arXiv2018

Anomalous dielectric response at intermixed oxide heterointerfaces

Two-dimensional charge carrier accumulation at oxide heterointerfaces presents a paradigm shift for oxide electronics. Like a capacitor, interfacial charge buildup couples to an electric field across the dielectric medium. To prevent the so-called polar catastrophe, several charge screening mechanisms emerge, including polar distortions and interfacial intermixing which reduce the sharpness of the interface. Here, we examine how atomic intermixing at oxide interfaces affect the balance between polar distortions and electric potential across the dielectric medium. We find that intermixing moves the peak charge distribution away from the oxide/oxide interface; thereby changing the direction of polar distortions away from this boundary with minimal effect on the electric field. This opposing electric field and polar distortions is equivalent to the transient phase transition tipping point observed in double well ferroelectrics; resulting in an anomalous dielectric response -- a possible signature of local negative differential capacitance, with implications for designing dissipationless oxide electronics.

cond-mat.mtrl-sci↗

arXiv2018

Oxygen vacancy formation energies in PbTiO$_3$/SrTiO$_3$ superlattice

The defect stability in a prototypical perovskite oxide superlattice consisting of SrTiO$_3$ and PbTiO$_3$ (STO/PTO) is determined using first principles density functional theory calculations. Specifically, the oxygen vacancy formation energies E$_v$ in the paraelectric and ferroelectric phases of a superlattice with four atomic layers of STO and four layers of PTO (4STO/4PTO) are determined and compared. The effects of charge state, octahedral rotation, polarization, and interfaces on the E$_v$ are examined. The formation energies vary layer-by-layer in the superlattices, with E$_v$ being higher in the ferroelectric phase than that in the paraelectric phase. The two interfaces constructed in these oxide superlattices, which are symmetrically equivalent in the paraelectric systems, exhibit very different formation energies in the ferroelectric superlattices and this can be seen to be driven by the coupling of ferroelectric and rotational modes. At equivalent lattice sites, E$_v$ of charged vacancies is generally lower than that of neutral vacancies. Octahedral rotations (a$^0$a$^0$c$^-$) in the FE superlattice have a significant effect on the E$_v$, increasing the formation energy of vacancies located near the interface but decreasing the formation energy of the oxygen vacancies located in the bulk-like regions of the STO and PTO constituent parts. The formation energy variations among different layers are found to be primarily caused by the difference in the local relaxation at each layer. These fundamental insights into the defect stability in perovskite superlattices can be used to tune defect properties via controlling the constituent materials of superlattices and interface engineering.

cond-mat.mtrl-sci↗

arXiv2015

On the role of chalcogen vapor annealing in inducing bulk superconductivity in Fe$_{1+y}$Te$_{1-x}$Se$_{x}$

Recent investigations have shown that Fe$_{1+y}$Te$_{1-x}$Se$_{x}$ can be made superconducting by annealing it in Se and O vapors. The current lore is that these chalcogen vapors induce superconductivity by removing the magnetic excess Fe atoms. To investigate this phenomenon we performed a combination of magnetic susceptibility, specific heat and transport measurements together with scanning tunneling microscopy and spectroscopy and density functional theory calculations on Fe$_{1+y}$Te$_{1-x}$Se$_{x}$ treated with Te vapor. We conclude that the main role of the Te vapor is to quench the magnetic moments of the excess Fe atoms by forming FeTe$_{m}$ (m $\geq$ 1) complexes. We show that the remaining FeTe$_{m}$ complexes are still damaging to the superconductivity and therefore that their removal potentially could further improve superconductive properties in these compounds.

cond-mat.supr-con↗

arXiv2015

Plentiful magnetic moments in oxygen deficient SrTiO3

Correlated band theory is employed to investigate the magnetic and electronic properties of different arrangements of oxygen di- and tri-vacancy clusters in SrTiO$_3$. Hole and electron doping of oxygen deficient SrTiO$_3$ yields various degrees of magnetization as a result of the interaction between localized magnetic moments at the defected sites. Different kinds of Ti atomic orbital hybridization are described as a function of the doping level and defect geometry. We find that magnetism in SrTiO$_{3-δ}$ is sensitive to the arrangement of neighbouring vacancy sites, charge carrier density, and vacancy-vacancy interaction. Permanent magnetic moments in the absence of vacancy doping electrons are observed. Our description of the charged clusters of oxygen vacancies widens the previous descriptions of mono and multi-vacancies and points out the importance of the controled formation at the atomic level of defects for the realization of transition metal oxide based devices with a desirable magnetic performance.

cond-mat.mtrl-sci↗

arXiv2014

Magnetism and metal-insulator transition in oxygen deficient SrTiO$_3$

First-principles calculations to study the electronic and magnetic properties of bulk, oxygen-deficient SrTiO$_3$ (STO) under different doping conditions and densities have been conducted. The appearance of magnetism in oxygen-deficient STO is not determined solely by the presence of a single oxygen vacancy but by the density of free carriers and the relative proximity of the vacant sites. We find that while an isolated vacancy behaves as a non-magnetic double donor, manipulation of the doping conditions allows the stability of a single donor state, with emergent local moments coupled ferromagnetically by carriers in the conduction band. Strong local lattice distortions enhance the binding of this state. The energy of the in-gap local moment can be further tuned by orthorhombic strain. Consequently we find that the free-carrier density and strain are fundamental components to obtaining trapped spin-polarized electrons in oxygen-deficient STO, which may have important implications in the design of optical devices.

cond-mat.mtrl-sci↗

arXiv2014

The role of random electric fields in relaxors

PbZr_{1-x}Ti_xO_3 (PZT) and Pb(Mg_{1/3}Nb_{2/3})_{1-x}Ti_xO_3 (PMN-$x$PT) are complex lead-oxide perovskites that display exceptional piezoelectric properties for pseudorhombohedral compositions near a tetragonal phase boundary. In PZT these compositions are ferroelectrics, but in PMN-xPT they are relaxors because the dielectric permittivity is frequency dependent and exhibits non-Arrhenius behavior. We show that the nanoscale structure unique to PMN-xPT and other lead-oxide perovskite relaxors is absent in PZT and correlates with a greater than 100% enhancement of the longitudinal piezoelectric coefficient in PMN-xPT relative to that in PZT. By comparing dielectric, structural, lattice dynamical, and piezoelectric measurements on PZT and PMN-xPT, two nearly identical compounds that represent weak and strong random electric field limits, we show that quenched (static) random fields establish the relaxor phase and identify the order parameter.

cond-mat.mtrl-sci↗