Searcharxiv⌕ Search

arXiv subjects

P. Gautam

Publications and source records attributed to P. Gautam.

23 records · Page 2Linked to original sources

Reflectance of Silicon Photomultipliers at Vacuum Ultraviolet Wavelengths

Characterization of the vacuum ultraviolet (VUV) reflectance of silicon photomultipliers (SiPMs) is important for large-scale SiPM-based photodetector systems. We report the angular dependence of the specular reflectance in a vacuum of SiPMs manufactured by Fondazionc Bruno Kessler (FBK) and Hamamatsu Photonics K.K. (HPK) over wavelengths ranging from 120 nm to 280 nm. Refractive index and extinction coefficient of the thin silicon-dioxide film deposited on the surface of the FBK SiPMs are derived from reflectance data of a FBK silicon wafer with the same deposited oxide film as SiPMs. The diffuse reflectance of SiPMs is also measured at 193 nm. We use the VUV spectral dependence of the optical constants to predict the reflectance of the FBK silicon wafer and FBK SiPMs in liquid xenon.

physics.ins-det↗

Measurements of electron transport in liquid and gas Xenon using a laser-driven photocathode

Measurements of electron drift properties in liquid and gaseous xenon are reported. The electrons are generated by the photoelectric effect in a semi-transparent gold photocathode driven in transmission mode with a pulsed ultraviolet laser. The charges drift and diffuse in a small chamber at various electric fields and a fixed drift distance of 2.0 cm. At an electric field of 0.5 kV/cm, the measured drift velocities and corresponding temperature coefficients respectively are $1.97 \pm 0.04$ mm/$μ$s and $(-0.69\pm0.05)$\%/K for liquid xenon, and $1.42 \pm 0.03$ mm/$μ$s and $(+0.11\pm0.01)$\%/K for gaseous xenon at 1.5 bar. In addition, we measure longitudinal diffusion coefficients of $25.7 \pm 4.6$ cm$^2$/s and $149 \pm 23$ cm$^2$/s, for liquid and gas, respectively. The quantum efficiency of the gold photocathode is studied at the photon energy of 4.73 eV in liquid and gaseous xenon, and vacuum. These charge transport properties and the behavior of photocathodes in a xenon environment are important in designing and calibrating future large scale noble liquid detectors.

physics.ins-det↗

Search for Neutrinoless Double-Beta Decay with the Complete EXO-200 Dataset

A search for neutrinoless double-beta decay ($0νββ$) in $^{136}$Xe is performed with the full EXO-200 dataset using a deep neural network to discriminate between $0νββ$ and background events. Relative to previous analyses, the signal detection efficiency has been raised from 80.8% to 96.4$\pm$3.0% and the energy resolution of the detector at the Q-value of $^{136}$Xe $0νββ$ has been improved from $σ/E=1.23\%$ to $1.15\pm0.02\%$ with the upgraded detector. Accounting for the new data, the median 90% confidence level $0νββ$ half-life sensitivity for this analysis is $5.0 \cdot 10^{25}$ yr with a total $^{136}$Xe exposure of 234.1 kg$\cdot$yr. No statistically significant evidence for $0νββ$ is observed, leading to a lower limit on the $0νββ$ half-life of $3.5\cdot10^{25}$ yr at the 90% confidence level.

hep-ex↗

Simulation of charge readout with segmented tiles in nEXO

nEXO is a proposed experiment to search for the neutrino-less double beta decay ($0νββ$) of $^{136}$Xe in a tonne-scale liquid xenon time projection chamber (TPC). The nEXO TPC will be equipped with charge collection tiles to form the anode. In this work, the charge reconstruction performance of this anode design is studied with a dedicated simulation package. A multi-variate method and a deep neural network are developed to distinguish simulated $0νββ$ signals from backgrounds arising from trace levels of natural radioactivity in the detector materials. These simulations indicate that the nEXO TPC with charge-collection tiles shows promising capability to discriminate the $0νββ$ signal from backgrounds. The estimated half-life sensitivity for $0νββ$ decay is improved by $\sim$20$~(32)\%$ with the multi-variate~(deep neural network) methods considered here, relative to the sensitivity estimated in the nEXO pre-conceptual design report.

physics.ins-det↗

Characterization of the Hamamatsu VUV4 MPPCs for nEXO

In this paper we report on the characterization of the Hamamatsu VUV4 (S/N: S13370-6152) Vacuum Ultra-Violet (VUV) sensitive Silicon Photo-Multipliers (SiPMs) as part of the development of a solution for the detection of liquid xenon scintillation light for the nEXO experiment. Various SiPM features, such as: dark noise, gain, correlated avalanches, direct crosstalk and Photon Detection Efficiency (PDE) were measured in a dedicated setup at TRIUMF. SiPMs were characterized in the range $163 \text{ } \text{K} \leq \text{T}\leq 233 \text{ } \text{K}$. At an over voltage of $3.1\pm0.2$ V and at $\text{T}=163 \text{ }\text{K}$ we report a number of Correlated Avalanches (CAs) per pulse in the $1 \upmu\text{s}$ interval following the trigger pulse of $0.161\pm0.005$. At the same settings the Dark-Noise (DN) rate is $0.137\pm0.002 \text{ Hz/mm}^{2}$. Both the number of CAs and the DN rate are within nEXO specifications. The PDE of the Hamamatsu VUV4 was measured for two different devices at $\text{T}=233 \text{ }\text{K}$ for a mean wavelength of $189\pm7\text{ nm}$. At $3.6\pm0.2$ V and $3.5\pm0.2$ V of over voltage we report a PDE of $13.4\pm2.6\text{ }\%$ and $11\pm2\%$, corresponding to a saturation PDE of $14.8\pm2.8\text{ }\%$ and $12.2\pm2.3\%$, respectively. Both values are well below the $24\text{ }\%$ saturation PDE advertised by Hamamatsu. More generally, the second device tested at $3.5\pm0.2$ V of over voltage is below the nEXO PDE requirement. The first one instead yields a PDE that is marginally close to meeting the nEXO specifications. This suggests that with modest improvements the Hamamatsu VUV4 MPPCs could be considered as an alternative to the FBK-LF SiPMs for the final design of the nEXO detector.

astro-ph.IM↗