Searcharxiv⌕ Search

arXiv subjects

P. I. Arseyev

Publications and source records attributed to P. I. Arseyev.

23 records · Page 2Linked to original sources

The effect of Coulomb correlations on non-equilibrium charge redistribution tuned by the tunneling current

It was shown that tunneling current flowing through a system with Coulomb correlations leads to charge redistribution between the different localized states. Simple model consisting of two electron levels have been analyzed by means of Heisenberg motion equations taking into account all order correlations of electron filling numbers in localized states exactly. We consider various relations between Coulomb interaction and localized electron energies. Sudden jumps of electron density at each level in a certain range of applied bias have been found. We found that for some parameter range inverse occupation in the two-level system appeared due to Coulomb correlations. It was shown also that Coulomb correlations lead to appearance of negative tunneling conductivity at certain relation between the values of tunneling rates from the two electronic levels.

cond-mat.other↗

Correlation induced switching of local spatial charge distribution in two-level system

We present theoretical investigation of spatial charge distribution in the two-level system with strong Coulomb correlations by means of Heisenberg equations analysis for localized states total electron filling numbers taking into account pair correlations of local electron density. It was found that tunneling current through nanometer scale structure with strongly coupled localized states causes Coulomb correlations induced spatial redistribution of localized charges. Conditions for inverse occupation of two-level system in particular range of applied bias caused by Coulomb correlations have been revealed. We also discuss possibility of charge manipulation in the proposed system.

cond-mat.mes-hall↗

Tunneling current induced phonon generation in nanostructures

We analyze generation of phonons in tunneling structures with two electron states coupled by electron-phonon interaction. The conditions of strong vibration excitations are determined and dependence of non-equilibrium phonon occupation numbers on the applied bias is found. For high vibration excitation levels self consistent theory for the tunneling transport is presented.

cond-mat.mes-hall↗

Phonon assisted tunneling in Josephson junctions

The expression for additional subgap current in the presence of electron-phonon interaction is derived. We show that the phonon assisted tunneling leads to appearance of peaks on current-voltage characteristics at the Josephson frequencies corresponding to the Raman-active phonons. The relation of the obtained results to experimental observations are discussed.

cond-mat.supr-con↗