arXiv subjects

P. K. Rout

Publications and source records attributed to P. K. Rout.

17 recordsLinked to original sources

arXiv2026

Spin-orbit torque-driven synthetic antiferromagnetic oscillator

Antiferromagnets offer a promising route toward robust spintronic devices because of their compensated magnetic order and exchange-enhanced spin dynamics. Here, we demonstrate a spin-orbit torque (SOT)-driven antiferromagnetic oscillator based on a nanoconstriction patterned from a synthetic antiferromagnet (SAF). Spin-rectification spectroscopy reveals electrical excitation of both acoustic and optical SAF eigenmodes, whose field and frequency dependences are quantitatively described by an antiferromagnetic resonance model. In addition to these linear eigenmodes, we observe low-field spin-rectification peaks that emerge only above a threshold DC current near the spin-flop transition. Their current-polarity-dependent sign and locking to an injected RF frequency provide electrical spin-rectification signatures consistent with current-selected chiral self-oscillatory dynamics. Micromagnetic simulations reproduce the threshold excitation of SOT-driven self-oscillations and injection locking, while macrospin simulations predict stable and chaotic nonlinear dynamics within the same spin-flop region. We interpret the multi-peak, weakly RF-frequency-dependent responses as a qualitative signature of complex nonlinear dynamics. These results establish SAF nanoconstrictions as an experimentally accessible platform for studying current-driven antiferromagnetic-like oscillator dynamics and motivate future work on nonlinear spintronic devices for signal processing and reservoir-computing concepts.

cond-mat.mes-hall↗

arXiv2021

Concomitant appearance of conductivity and superconductivity in (111)LaAlO3/SrTiO3 interface with metal capping

In polar-oxide interfaces, a certain number of monolayers (ML) is needed for conductivity to appear. This threshold for conductivity is explained by accumulating sufficient electric potential to initiate charge transfer to the interface. Here we study experimentally and theoretically the (111) SrTiO3/LaAlO3 interface where a critical thickness, tc, of nine epitaxial LaAlO3 ML is required to turn the interface from insulating to conducting and even superconducting. We show that tc decreases to 3ML when depositing a cobalt over-layer (capping) and 6ML for platinum capping. The latter result contrasts with the (100) interface, where platinum capping increases tc beyond the bare interface. The observed threshold for conductivity for the bare and the metal-capped interfaces is confirmed by our density functional theory calculations. Interestingly, for (111) SrTiO3/LaAlO3/Metal interfaces, conductivity appears concomitantly with superconductivity in contrast with the (100) SrTiO3/LaAlO3/Metal interfaces where tc is smaller than the critical thickness for superconductivity. We attribute this dissimilarity to the different orbital polarization of e'g for the (111) versus dxy for the (001) interface.

cond-mat.supr-con↗

arXiv2019

Formation and magnetic properties of spark plasma sintered Mn$_{3-δ}$ ($δ$ = 0, 1) alloys

We present the synthesis of D0$_{22}$ Mn$_{3 - δ}$Ga ($δ$ = 0, 1) Heusler alloys by Spark Plasma Sintering method. The single phase Mn$_3$Ga (T$_\mathrm{c}$ $\simeq$ 780 K) is synthesized, while Mn$_2$Ga (T$_\mathrm{c}$ $\simeq$ 710 K) is found to coexist with a near-stoichiometric room temperature paramagnetic Mn$_9$Ga$_5$~($\approx$ 15 \%) phase due to its lower formation energy, as confirmed from our density functional theory (DFT) calculations. The alloys show hard magnetic behavior with large room temperature spontaneous magnetization m$_s$(80 kOe) = 1.63 (0.83) $μ_\mathrm{B}$/f.u. and coercivity H$_\mathrm{c}$ = 4.28 (3.35) kOe for Mn$_3$Ga (Mn$_2$Ga). The magnetic properties are further investigated till T$_\mathrm{c}$ and the H$_\mathrm{c}$ (T) analysis by Stoner-Wohlfarth model shows the nucleation mechanism for the magnetization reversal. The experimental results are well supported by DFT calculations, which reveal that the ground state of D0$_{22}$ Mn$_2$Ga is achieved by the removal of Mn-atoms from full Heusler Mn$_3$Ga structure in accordance with half Heusler alloy picture.

cond-mat.mtrl-sci↗

arXiv2019

Chiral superconductivity in the alternate stacking compound 4Hb-TaS$_2$

Layered van der Waals (vdW) materials are emerging as one of the most versatile directions in the field of quantum condensed matter physics. They allow an unprecedented control of electronic properties via stacking of different types of two-dimensional (2D) materials. A fascinating frontier, largely unexplored, is the stacking of strongly-correlated phases of matter in vdW materials. Here, we study 4Hb-TaS$_2$, which naturally realizes an alternating stacking of a Mott insulator, recently reported as a gapless spin-liquid candidate(1T-TaS$_2$), and a 2D superconductor (1H-TaS$_2$). This raises the question of how these two components affect each other. We find a superconducting ground state with a transition temperature of 2.7K, which is significantly elevated compared to the 2H polytype (Tc=0.7K). Strikingly, the superconducting state exhibits signatures of time-reversal-symmetry breaking abruptly appearing at the superconducting transition, which can be naturally explained by a chiral superconducting state.

cond-mat.supr-con↗

arXiv2018

Vortex excitations in the Insulating State of an Oxide Interface

In two-dimensional (2D) superconductors an insulating state can be induced either by applying a magnetic field, $H$, or by increasing disorder. Many scenarios have been put forth to explain the superconductor to insulator transition (SIT): dominating fermionic physics after the breaking of Cooper pairs, loss of phase coherence between superconducting islands embedded in a metallic or insulating matrix and localization of Cooper pairs with concomitant condensation of vortex-type excitations. The difficulty in characterizing the insulating state and its origin stems from the lack of a continuous mapping of the superconducting to insulating phase diagram in a single sample. Here we use the two-dimensional (2D) electron liquid formed at the interface between the two insulators (111) SrTiO$_3$ and LaAlO$_3$ to study the superconductor to insulator transition. This crystalline interface surprisingly exhibits very strong features previously observed only in amorphous systems. By use of electrostatic gating and magnetic fields, the sample is tuned from the metallic region, where supeconductivity is fully manifested, deep into the insulating state. Through examination of the field dependence of the sheet resistance and comparison of the response to fields in different orientations we identify a new magnetic field scale, H$_{pairing}$, where superconducting fluctuations are muted. Our findings show that vortex fluctuations excitations and Cooper pair localization are responsible for the observed SIT and that these excitations surprisingly persist deep into the insulating state.

cond-mat.supr-con↗

arXiv2017

Link between the Superconducting Dome and Spin-Orbit Interaction in the (111) LaAlO$_3$/SrTiO$_3$ Interface

We measure the gate voltage ($V_g$) dependence of the superconducting properties and the spin-orbit interaction in the (111)-oriented LaAlO$_3$/SrTiO$_3$ interface. Superconductivity is observed in a dome-shaped region in the carrier density-temperature phase diagram with the maxima of superconducting transition temperature $T_c$ and the upper critical fields lying at the same $V_g$. The spin-orbit interaction determined from the superconducting parameters and confirmed by weak-antilocalization measurements follows the same gate voltage dependence as $T_c$. The correlation between the superconductivity and spin-orbit interaction as well as the enhancement of the parallel upper critical field, well beyond the Chandrasekhar-Clogston limit suggest that superconductivity and the spin-orbit interaction are linked in a nontrivial fashion. We propose possible scenarios to explain this unconventional behavior.

cond-mat.supr-con↗

arXiv2017

Six-fold crystalline anisotropic magnetoresistance in the (111) LaAlO$_3$/SrTiO$_3$ oxide interface

We measured the magnetoresistance of the 2D electron liquid formed at the (111) LaAlO$_3$/SrTiO$_3$ interface. The hexagonal symmetry of the interface is manifested in a six-fold crystalline component appearing in the anisotropic magnetoresistance (AMR) and planar Hall data, which agree well with symmetry analysis we performed. The six-fold component increases with carrier concentration, reaching 15% of the total AMR signal. Our results suggest the coupling between higher itinerant electronic bands and the crystal as the origin of this effect and demonstrate that the (111) oxide interface is a unique hexagonal system with tunable magnetocrystalline effects.

cond-mat.str-el↗

arXiv2017

Signature of surface state coupling in thin films of the topological Kondo insulator SmB$_6$ from anisotropic magnetoresistance

The temperature and thickness dependencies of the in-plane anisotropic magnetoresistance (AMR) of SmB$_6$ thin films are reported. We find that the AMR changes sign from negative ($ρ_{||}<ρ_{\perp}$) at high temperatures to positive ($ρ_{||}>ρ_{\perp}$) at low temperatures. The temperature, T$_s$, at which this sign change occurs, decreases with increasing film thickness $t$ and T$_s$ vanishes for $t$ $>$ 30 nm. We interpret our results in the framework of a competition between two components: a negative bulk contribution and a positive surface AMR.

cond-mat.str-el↗

arXiv2016

Fault Detection in IEEE 14-Bus Power System with DG Penetration Using Wavelet Transform

Wavelet transform is proposed in this paper for detection of islanding and fault disturbances distributed generation (DG) based power system. An IEEE 14-bus system with DG penetration is considered for the detection of disturbances under different operating conditions. The power system is a hybrid combination of photovoltaic, and wind energy system connected to different buses with different level of penetration. The voltage signal is retrieved at the point of common coupling (PCC) and processed through wavelet transform to detect the disturbances. Further, energy and standard deviation (STD) as performance indices are evaluated and compared with a suitable threshold in order to analyze a disturbance condition. Again, a comparative analysis between the existing and proposed detection is studied to prove the better performance of wavelet transform.

eess.SY↗

arXiv2016

Detection of Faults in Power System Using Wavelet Transform and Independent Component Analysis

Uninterruptible power supply is the main motive of power utility companies that motivate them for identifying and locating the different types of faults as quickly as possible to protect the power system prevent complete power black outs using intelligent techniques. Thus, the present research work presents a novel method for detection of fault disturbances based on Wavelet Transform (WT) and Independent Component Analysis (ICA). The voltage signal is taken offline under fault conditions and is being processed through wavelet and ICA for detection. The time-frequency resolution from WT transform detects the fault initiation instant in the signal. Again, a performance index is calculated from independent component analysis under fault condition which is used to detect the fault disturbance in the voltage signal. The proposed approach is tested to be robust enough under various operating scenarios like without noise, with 20-dB noise and variation in frequency. Further, the detection study is carried out using a performance index, energy content, by applying the existing Fourier transform (FT), short time Fourier transform (STFT) and the proposed wavelet transform. Fault disturbances are detected if the energy calculated in each scenario is greater than the corresponding threshold value. The fault detection study is simulated in MATLAB/Simulink for a typical power system.

eess.SY↗

arXiv2016

Griffiths phase and critical behavior in layered Sr$_2$IrO$_4$ ferromagnet

We report the existence of Griffiths phase (GP) and its influence on critical phenomena in layered Sr$_2$IrO$_4$ ferromagnet (T$_C$ = 221.5 K). The power law behavior of inverse magentic susceptibility, 1/$χ$(T) with exponent $λ= 0.18(2)$ confirm the GP in the regime T$_C$ $<$ T $\leq$ T$_G$ = 279.0(5) K. Moreover, the detailed critical analysis via modified Arrott plot method exhibits unrealistic critical exponents $β$ = 0.77(1), $γ$ = 1.59(2) and $δ= 3.06(4)$, in corroboration with magneto-caloric study. The abnormal exponent values have been viewed in context of ferromagnetic-Griffiths phase transition. The GP has been further analyzed using Bray model, which yields a reliable value of $β$ = 0.19(2), belonging to the two-dimensional (2D) XYh$_4$ universality class with strong anisotropy present in Sr$_2$IrO$_4$. The present study proposes Bray model as a possible tool to investigate the critical behavior for Griffiths ferromagnets in place of conventional Arrott plot analysis. The possible origins of GP and its correlation with insulating nature of Sr$_2$IrO$_4$ have been discussed.

cond-mat.str-el↗

arXiv2015

Resistance minimum and electrical conduction mechanism in polycrystalline CoFeB thin films

The temperature dependent resistance $R$($T$) of polycrystalline ferromagnetic CoFeB thin films of varying thickness are analyzed considering various electrical scattering processes. We observe a resistance minimum in $R$($T$) curves below $\simeq$ 29 K, which can be explained as an effect of intergranular Coulomb interaction in a granular system. The structural and Coulomb interaction related scattering processes contribute more as the film thickness decreases implying the role of disorder and granularity. Although the magnetic contribution to the resistance is the weakest compared to these two, it is the only thickness independent process. On the contrary, the negative coefficient of resistance can be explained by electron interaction effect in disordered amorphous films.

cond-mat.mtrl-sci↗

arXiv2013

Two-dimensional electron-gas-like charge transport at magnetic Heusler alloy-SrTiO$_3$ interface

We report remarkably low residual resistivity, giant residual resistivity ratio, free-electron-like Hall resistivity and high mobility ($\approx$ 10$^4$ cm$^2$V$^{-1}$s$^{-1}$) charge transport in epitaxial films of Co$_2$MnSi and Co$_2$FeSi grown on (001) SrTiO$_3$. This unusual behavior is not observed in films deposited on other cubic oxide substrates of comparable lattice parameters. The scaling of the resistivity with thickness of the films allow extraction of interface conductance, which can be attributed to a layer of oxygen vacancies confined within 1.9 nm of the interface as revealed by atomically resolved electron microscopy and spectroscopy. The high mobility transport observed here at the interface of a fully spin polarized metal is potentially important for spintronics applications.

cond-mat.mtrl-sci↗

arXiv2013

Magnetoelastic coupling induced magnetic anisotropy in Co$_2$(Fe/Mn)Si thin films

The influence of epitaxial strain on uniaxial magnetic anisotropy of Co$_{2}$FeSi (CFS) and Co$_{2}$MnSi (CMS) Heusler alloy thin films grown on (001) SrTiO$_3$ (STO) and MgO is reported. The in-plane biaxial strain is susceptible to tune by varying the thickness of the films on STO, while on MgO the films show in-plane easy axis for magnetization (\overrightarrow{M}) irrespective of their thickness. A variational analysis of magnetic free energy functional within the Stoner-Wohlfarth coherent rotation model with out-of-plane uniaxial anisotropy for the films on STO showed the presence of magnetoelastic anisotropy with magnetostriction constant $\approx$ (12.22$\pm$0.07)$\times 10^{-6}$ and (2.02$\pm$0.06)$\times 10^{-6}$, in addition to intrinsic magnetocrystalline anisotropy $\approx$ -1.72$\times 10^{6}$ erg/cm$^{3}$ and -3.94$\times 10^{6}$ erg/cm$^{3}$ for CFS and CMS, respectively. The single-domain phase diagram reveals a gradual transition from in-plane to out-of-plane orientation of magnetization with the decreasing film thickness. A maximum canting angle of 41.5$^{\circ}$ with respect to film plane is predicted for the magnetization of the thinnest (12 nm) CFS film on STO. The distinct behaviour of \overrightarrow{M} in the films with lower thickness on STO is attributed to strain-induced tetragonal distortion.

cond-mat.mtrl-sci↗

arXiv2012

Strain induced magnetic domain evolution and spin re-orientation transition in epitaxial manganite films

The evolution of magnetic domain structure in epitaxial La$_{0.625}$Ca$_{0.375}$MnO$_3$ films on (001) NdGaO$_3$ is monitored as a function of temperature and magnetic field using Magnetic Force Microscopy. We see two distinct regions of magnetic orientational order; one in-plane displaying contrast-less image and the other tilted away from the film plane forming a distinct stripe pattern. A strong domain splitting is observed at the boundary of two regions, which is resilient to reorientation with temperature and magnetic field. We propose a model magnetic free energy functional to explain the mechanism of domain splitting seen in manganite films.

cond-mat.mes-hall↗

arXiv2012

Interface superconductivity in La$_{1.48}$Nd$_{0.4}$Sr$_{0.12}$CuO$_{4}$/La$_{1.84}$Sr$_{0.16}$CuO$_{4}$ bilayers

We identify a distinct superconducting phase at the interface of a La$_{1.48}$Nd$_{0.4}$Sr$_{0.12}$CuO$_4$ (LNSCO)/La$_{1.84}$Sr$_{0.16}$CuO$_4$ (LSCO) epitaxial bilayer system using ac screening measurements. A model based on inter-diffusion of quasiparticles and condensate at the interface yields a thickness of $\sim$ 25 nm for the interfacial layer. Two-dimensional superconductivity of the interface layer appears to be governed by Kosterlitz-Thouless-Berezinskii transition. A parallel magnetic field suppresses the superconducting transition temperature of this layer with a pair breaking parameter $α$ varying as $H^2$.

cond-mat.supr-con↗

arXiv2012

Electronic reconstruction and enhanced superconductivity at La$_{1.6-x}$Nd$_{0.4}$Sr$_{x}$CuO$_{4}$/La$_{1.55}$Sr$_{0.45}$CuO$_{4}$ bilayer interface

We report enhanced superconductivity in bilayer thin films consisting of superconducting La$_{1.6-x}$Nd$_{0.4}$Sr$_{x}$CuO$_{4}$ with 0.06 $\leq x<$ 0.20 and metallic but non-superconducting La$_{1.55}$Sr$_{0.45}$CuO$_{4}$. These bilayers show a maximum increase in superconducting transition temperature ($T_c$) of more than 200% for $x$ = 0.06 while no change in $T_c$ is observed for the bilayers with $x\geq$ 0.20. The analysis of the critical current and kinetic inductance data suggests 2-3 unit cells thick interfacial layer electronically perturbed to have a higher $T_c$. A simple charge transfer model with cation intermixing explains the observed $T_c$ in bilayers. Still the unusually large thickness of interfacial superconducting layers can not be explained in terms of this model. We believe the stripe relaxation as well as the proximity effect also influence the superconductivity of the interface.

cond-mat.supr-con↗