Dimensional Crossover of Mass Anisotropy in Ta-doped WTe2
The observation of extremely large magnetoresistance in WTe2 has attracted considerable attention towards understanding its underlying origin. With its layered van der Waals structure, the question that remains largely unexplored is whether the three-dimensional anisotropic transport characteristics of WTe2 persists under chemical substitution. Here, we present a systematic angle-dependent magneto-transport study of single-crystalline TaxW1-xTe2 (x = 0, 0.05, 0.1). The results are analysed within a mass anisotropy scaling framework to extract the mass anisotropy parameter {\gamma} as a function of temperature and doping. It is observed that Ta substitution leads to monotonic increase of {\gamma} across all temperatures, indicating a progressive deepening of quasi-two-dimensional Fermi surface character. Ta doping also leads to a substantial improvement in crystalline quality, reflected in a pronounced increase in the residual resistivity ratio. Despite weakening electron-hole compensation, the magnetoresistance rises sharply to ~58,211% at x = 0.1, which is assigned to a substantial enhancement in carrier mobility. Rietveld refinement confirms a systematic c-axis contraction with Ta content, identifying the structural origin of the enhanced anisotropy. The mass anisotropy scaling that holds for x = 0 and x = 0.05 breaks down for x = 0.1, where the angular magneto-resistance anisotropy substantially exceeds single-ellipsoid predictions, pointing to a multi-pocket Fermi surface with distinct anisotropies. Nonlinear Hall resistivity provides independent evidence for the underlying multiband character of transport in this system. These findings demonstrate that Fermi surface anisotropy, carrier compensation, and mobility are independent parameters that can lead to tuneable control of large magnetoresistance in topological semimetal WTe2.