arXiv subjects

P. M. Haney

Publications and source records attributed to P. M. Haney.

12 recordsLinked to original sources

arXiv2023

Breakdown of the drift-diffusion model for transverse spin transport in a disordered Pt film

Spin accumulation and spin current profiles are calculated for a disordered Pt film subjected to an in-plane electric current within the nonequilibrium Green function approach. In the bulklike region of the sample, this approach captures the intrinsic spin Hall effect found in other calculations. Near the surfaces, the results reveal qualitative differences with the results of the widely used spin-diffusion model, even when the boundary conditions are modified to try to account for them. One difference is that the effective spin-diffusion length for transverse spin transport is significantly different from its longitudinal counterpart and is instead similar to the mean-free path. This feature may be generic for spin currents generated via the intrinsic spin-Hall mechanism because of the differences in transport mechanisms compared to longitudinal spin transport. Orbital accumulation in the Pt film is only significant in the immediate vicinity of the surfaces and has a small component penetrating into the bulk only in the presence of spin-orbit coupling, as a secondary effect induced by the spin accumulation.

cond-mat.mes-hall↗

arXiv2022

Field-free-switching state diagram of perpendicular magnetization subjected to conventional and unconventional spin-orbit torques

The lack of certain crystalline symmetries in strong spin-orbit-coupled non-magnetic materials allows for the existence of uncoventional spin Hall responses, with electrically generated transverse spin currents possessing collinear flow and spin directions. The injection of such spin currents into an adjacent ferromagnetic layer can excite magnetization dynamics via unconventional spin-orbit torques, leading to deterministic switching in ferromagnets with perpendicular magnetic anisotropy. We study the interplay between conventional and unconventional spin-orbit torques on the magnetization dynamics of a perpendicular ferromagnet in the small intrinsic damping limit, and identify a rich set of dynamical regimes that includes deterministic and probabilistic switching, precessional and pinning states. Contrary to common belief, we found that there exists a critical conventional spin Hall angle, beyond which deterministic magnetization switching transitions to a precessional or pinned state. Conversely, we showed that larger unconventional spin Hall angle is generally beneficial for deterministic switching. We derive an approximate expression that qualitatively describes the state diagram boundary between the full deterministic switching and precessional states and discuss a criterion for searching symmetry-broken spin Hall materials in order to maximize switching efficiency. Our work offers a roadmap towards energy efficient spintronic devices, which might opens doors for applications in advanced in-memory computing technologies.

cond-mat.mes-hall↗

arXiv2021

Gigantic tunneling magnetoresistance in magnetic Weyl semimetal tunnel junctions

We investigate the tunneling magnetoresistance in magnetic tunnel junctions (MTJs) comprised of Weyl semimetal contacts. We show that chirality-magnetization locking leads to a gigantic tunneling magnetoresistance ratio, an effect that does not rely on spin filtering by the tunnel barrier. Our results indicate that the conductance in the anti-parallel configuration is more sensitive to magnetization fluctuations than in MTJs with normal ferromagnets, and predicts a TMR as large as 10^4 % when realistic magnetization fluctuations are accounted for. In addition, we show that the Fermi arc states give rise to a non-monotonic dependence of conductance on the misalignment angle between the magnetizations of the two contacts.

cond-mat.mes-hall↗

arXiv2021

Current-induced torques in magnetic Weyl semimetal tunnel junctions

We study the current-induced torques in asymmetric magnetic tunnel junctions containing a conventional ferromagnet and a magnetic Weyl semimetal contact. The Weyl semimetal hosts chiral bulk states and topologically protected Fermi arc surface states which were found to govern the voltage behavior and efficiency of current-induced torques. We report how bulk chirality dictates the sign of the non-equilibrium torques acting on the ferromagnet and discuss the existence of large field-like torques acting on the magnetic Weyl semimetal which exceeds the theoretical maximum of conventional magnetic tunnel junctions. The latter are derived from the Fermi arc spin texture and display a counter-intuitive dependence on the Weyl nodes separation. Our results shed light on the new physics of multilayered spintronic devices comprising of magnetic Weyl semimetals, which might open doors for new energy efficient spintronic devices.

cond-mat.mes-hall↗

arXiv2020

Imaging the valley and orbital Hall effect in monolayer MoS2

The topological properties of a material's electronic structure are encoded in its Berry curvature, a quantity which is intimately related to the transverse electrical conductivity. In transition metal dichalcogenides with broken inversion symmetry, the nonzero Berry curvature results in a valley Hall effect. In this paper we identify a previously unrecognized consequence of Berry curvature in these materials: an electric field-induced change in the electrons' charge density orientation. We use first principles calculations to show that measurements of the electric field-induced change in the charge density or local density of states in MoS$_2$ can be used to measure its energy-dependent valley and orbital Hall conductivity.

cond-mat.mes-hall↗

arXiv2020

Bidirectional switching assisted by interlayer exchange coupling in asymmetric magnetic tunnel junctions

We study the combined effects of spin transfer torque, voltage modulation of interlayer exchange coupling and magnetic anisotropy on the switching behavior of perpendicular magnetic tunnel junctions (p-MTJs). In asymmetric p-MTJs, a linear-in-voltage dependence of interlayer exchange coupling enables the effective perpendicular anisotropy barrier to be lowered for both voltage polarities. This mechanism is shown to reduce the critical switching current and effective activation energy. Finally, we analyze the possibility of having switching via interlayer exchange coupling only.

cond-mat.mtrl-sci↗

arXiv2019

Intrinsic spin currents in ferromagnets

First principles calculations show that electric fields applied to ferromagnets generate spin currents flowing perpendicularly to the electric field. Reduced symmetry in these ferromagnets enables a wide variety of such spin currents. However, the total spin current is approximately the sum of a magnetization-independent spin Hall current and an anisotropic spin anomalous Hall current. Intrinsic spin currents are not subject to dephasing, enabling their spin polarizations to be misaligned with the magnetization, which enables the magnetization-independent spin Hall effect. The spin Hall conductivity and spin anomalous Hall conductivities of transition metal ferromagnets are comparable to those found in heavy metals, opening new avenues for efficient spin current generation in spintronic devices.

cond-mat.mes-hall↗

arXiv2007

Current-Induced Torques in Magnetic Metals: Beyond Spin Transfer

Current-induced torques on ferromagnetic nanoparticles and on domain walls in ferromagnetic nanowires are normally understood in terms of transfer of conserved spin angular momentum between spin-polarized currents and the magnetic condensate. In a series of recent articles we have discussed a microscopic picture of current-induced torques in which they are viewed as following from exchange fields produced by the misaligned spins of current carrying quasiparticles. This picture has the advantage that it can be applied to systems in which spin is not approximately conserved. More importantly, this point of view makes it clear that current-induced torques can also act on the order parameter of an antiferromagnetic metal, even though this quantity is not related to total spin. In this informal and intentionally provocative review we explain this picture and discuss its application to antiferromagnets.

cond-mat.mes-hall↗

arXiv2006

Ab-initio GMR and current-induced torques in Au/Cr multilayers

We report on an {\em ab-initio} study of giant magnetoresistance (GMR) and current-induced-torques (CITs) in Cr/Au multilayers that is based on non-equilibrium Green's functions and spin density functional theory. We find substantial GMR due primarily to a spin-dependent resonance centered at the Cr/Au interface and predict that the CITs are strong enough to switch the antiferromagnetic order parameter at current-densities $\sim 100$ times smaller than typical ferromagnetic metal circuit switching densities.

cond-mat.mes-hall↗

arXiv2006

Current Induced Order Parameter Dynamics: Microscopic Theory Applied to Co/Cu/Co spin valves

Transport currents can alter alter order parameter dynamics and change steady states in superconductors, in ferromagnets, and in hybrid systems. In this article we present a scheme for fully microscopic evaluation of order parameter dynamics that is intended for application to nanoscale systems. The approach relies on time-dependent mean-field-theory, on an adiabatic approximation, and on the use of non-equilibrium Greens function (NEGF) theory to calculate the influence of a bias voltage across a system on its steady-state density matrix. We apply this scheme to examine the spin-transfer torques which drive magnetization dynamics in Co/Cu/Co spin-valve structures. Our microscopic torques are peaked near Co/Cu interfaces, in agreement with most previous pictures, but suprisingly act mainly on Co transition metal $d$-orbitals rather than on $s$-orbitals as generally supposed.

cond-mat.mes-hall↗

arXiv2006

Inelastic scattering in ferromagnetic and antiferromagnetic metal spintronics

We use a ferromagnetic voltage probe model to study the influence of inelastic scattering on giant magnetoresistance and current-induced torques in ferromagnetic and antiferromagnetic metal spin valves. The model is based on the Green's function formulation of transport theory and represents spin-dependent and spin-independent inelastic scatterers by interior voltage probes that are constrained to carry respectively no charge current and no spin or charge current. We find that giant magnetoresistance and spin transfer torques in ferromagnetic metal spin valve structures survive arbitrarily strong spin-independent inelastic scattering, while the recently predicted analogous phenomena in antiferromagnetic metal spin valves are partially suppressed. We use toy-model numerical calculations to estimate spacer layer thickness requirements for room temperature operation of antiferromagnetic metal spin valves.

cond-mat.mes-hall↗

arXiv2006

Spin transfer in an antiferromagnet

An electrical current can transfer spin angular momentum to a ferromagnet. This novel physical phenomenon, called spin transfer, offers unprecedented spatial and temporal control over the magnetic state of a ferromagnet and has tremendous potential in a broad range of technologies, including magnetic memory and recording. Recently, it has been predicted that spin transfer is not limited to ferromagnets, but can also occur in antiferromagnetic materials and even be stronger under some conditions. In this paper we demonstrate transfer of spin angular momentum across an interface between ferromagnetic and antiferromagnetic metals. The spin transfer is mediated by an electrical current of high density (~10^12 A/m^2) and revealed by variation in the exchange bias at the ferromagnet/antiferromagnet interface. We find that, depending on the polarity of the electrical current flowing across the interface, the strength of the exchange bias can either increase or decrease. This finding is explained by the theoretical prediction that a spin polarized current generates a torque on magnetic moments in the antiferromagnet. Current-mediated variation of exchange bias can be used to control the magnetic state of spin-valve devices, e.g., in magnetic memory applications.

cond-mat.mtrl-sci↗