arXiv subjects

P. Michler

Publications and source records attributed to P. Michler.

18 recordsLinked to original sources

arXiv2023

Deterministic Storage and Retrieval of Telecom Quantum Dot Photons Interfaced with an Atomic Quantum Memory

A hybrid interface of solid state single-photon sources and atomic quantum memories is a long sought-after goal in photonic quantum technologies. Here we demonstrate deterministic storage and retrieval of photons from a semiconductor quantum dot in an atomic ensemble quantum memory at telecommunications wavelengths. We store single photons from an InAs quantum dot in a high-bandwidth rubidium vapour based quantum memory, with a total internal memory efficiency of $(12.9 \pm 0.4) \%$. The signal-to-noise ratio of the retrieved photons is $18.2\pm 0.6$, limited only by detector dark counts. This demonstration paves the way to quantum technologies that rely on distributed entanglement, and is especially suited for photonic quantum networks.

quant-ph↗

arXiv2023

A unipolar quantum dot diode structure for advanced quantum light sources

Triggered, indistinguishable, single photons play a central role in various quantum photonic implementations. Here, we realize a novel n$^+-$i$-$n$^{++}$ diode structure embedding semiconductor quantum dots: the gated device enables spectral tuning of the transitions and deterministic control of the observed charged states. Blinking-free single-photon emission and high two-photon indistinguishability is observed. The linewidth's temporal evolution is investigated for timescales spanning more than $6$ orders of magnitude, combining photon-correlation Fourier spectroscopy, high-resolution photoluminescence spectroscopy, and two-photon interference (visibility of $V_{\text{TPI, 2ns}}=\left(85.5\pm2.2\right){\%}$ and $V_{\text{TPI, 9ns}}=\left(78.3\pm3.0\right){\%}$). No spectral diffusion or decoherence on timescales above $\sim 9\,\text{ns}$ is observed for most of the dots, and the emitted photons' linewidth $\left(\left(420\pm30\right)\text{MHz}\right)$ deviates from the Fourier-transform limit only by a factor of $1.68$. Thus, for remote TPI experiments, visibilities above $74\%$ are anticipated. The presence of n-doping only signifies higher available carrier mobility, making the presented device highly attractive for future development of high-speed tunable, high-performance quantum light sources.

quant-ph↗

arXiv2019

Coherence and indistinguishability of highly pure single photons from non-resonantly and resonantly excited telecom C-band quantum dots

In the present work, the effect of resonant pumping schemes in improving the photon coherence is investigated on InAs/InGaAs/GaAs quantum dots emitting in the telecom C-band. The linewidths of transitions of multiple exemplary quantum dots are determined under above-band pumping and resonance fluorescence via Fourier-transform spectroscopy and resonance scans, respectively. The average linewidth is reduced from $9.74\,\mathrm{GHz}$ in above-band excitation to $3.50\,\mathrm{GHz}$ in resonance fluorescence underlining its superior coherence properties. Furthermore, the feasibility of coherent state preparation with a fidelity of $49.2\,\%$ is demonstrated, constituting a step towards on-demand generation of coherent, single C-band photons from quantum dots. Finally, two-photon excitation of the biexciton is investigated as a resonant pumping scheme. A deconvoluted single-photon purity value of $g^{(2)}_{\mathrm{HBT}}(0)=0.072\pm 0.104$ and a degree of indistinguishability of $V_{\mathrm{HOM}}=0.894\pm0.109$ are determined for the biexciton transition. This represents an important step towards fulfilling the prerequisites for quantum communication applications like quantum repeater schemes at telecom wavelength.

quant-ph↗

arXiv2018

Microcavity-enhanced Kerr nonlinearity in a vertical-external-cavity surface-emitting laser

Self-mode-locking has become an emerging path to the generation of ultrashort pulses with vertical-external-cavity surface-emitting lasers. In our work, a strong Kerr nonlinearity that is so far assumed to give rise to mode-locked operation is evidenced and a strong nonlinearity enhancement by the microcavity is revealed. We present wavelength-dependent measurements of the nonlinear absorption and nonlinear-refractive-index change in a gain chip using the Z-scan technique. We report negative nonlinear refraction up to 1.5E-11 cm2/W in magnitude in the (InGa)As/Ga(AsP) material system close to the laser design wavelength, which can lead to Kerr lensing. We show that by changing the angle of incidence of the probe beam with respect to the gain chip, the Kerr nonlinearity can be wavelength-tuned, shifting with the microcavity resonance. Such findings may ultimately lead to novel concepts with regard to tailored self-mode-locking behavior achievable by peculiar Kerr-lens chip designs for cost-effective, robust and compact fs-pulsed semiconductor lasers.

physics.optics↗

arXiv2014

Phonon-assisted robust and deterministic two-photon biexciton preparation in a quantum dot

We investigate both experimentally and theoretically a simple yet more robust and flexible alternative to Rabi oscillation-type biexciton preparation protocols traditionally used for semiconductor quantum dots. The quantum dot is excited by a strong laser pulse positively detuned from the two-photon resonance yielding an on demand initialization of the biexciton state by making use of the phonon-induced thermalization of the photon dressed states. It is shown that for excitation pulses in the picosecond range, a stable and high fidelity of up to $f_{XX}=0.98\pm 0.01$ is reached. Notably, the generated photons show similar coherence properties as measured in the resonant two-photon scheme. This protocol is a powerful tool for the control of complex solid state systems combining radiative cascades, entanglement and resonant cavity modes.

quant-ph↗

arXiv2014

Spectroscopy of the D1-transition of cesium by dressed-state resonance fluorescence from a single (In,Ga)As/GaAs quantum dot

We use a laser-driven single (In,Ga)As quantum dot (QD) in the dressed state regime of resonance fluorescence ($T = 4$ K) to observe the four $D_1$-transition lines of alkali atomic cesium ($Cs$) vapor at room temperature. We tune the frequency of the dressing continuous-wave laser in the vicinity of the bare QD resonance $\sim 335.116$ THz ($\sim 894.592$ nm) at constant excitation power and thereby controllably tune the center and side channel frequencies of the probe light, i.e. the Mollow triplet. Resonances between individual QD Mollow triplet lines and the atomic hyperfine-split transitions are clearly identified in the $Cs$ absorption spectrum. Our results show that narrow-band (In,Ga)As QD resonance fluorescence (RF) is suitable to optically address individual transitions of the $D_1$ quadruplet without applying magnetic field or electric field tuning.

physics.optics↗

arXiv2013

Mollow "quintuplets" from coherently-excited quantum dots

Charge-neutral excitons in semiconductor quantum dots have a small finite energy separation caused by the anisotropic exchange splitting. Coherent excitation of neutral excitons will generally excite both exciton components, unless the excitation is parallel to one of the dipole axes. We present a polaron master equation model to describe two-exciton pumping using a coherent continuous wave pump field in the presence of a realistic anisotropic exchange splitting. We predict a five-peak incoherent spectrum, thus generalizing the Mollow triplet to become a Mollow quintuplet. We experimentally confirm such spectral quintuplets for In(Ga)As quantum dots and obtain very good agreement with theory.

cond-mat.mes-hall↗

arXiv2012

Phonon-Assisted Incoherent Excitation of a Quantum Dot and its Emission Properties

We present a detailed study of a phonon-assisted incoherent excitation mechanism of single quantum dots. A spectrally-detuned laser couples to a quantum dot transition by mediation of acoustic phonons, whereby excitation efficiencies up to 20 % with respect to strictly resonant excitation can be achieved at T = 9 K. Laser frequency-dependent analysis of the quantum dot intensity distinctly maps the underlying acoustic phonon bath and shows good agreement with our polaron master equation theory. An analytical solution for the photoluminescence is introduced which predicts a broadband incoherent coupling process when electron-phonon scattering is in the strong phonon coupling (polaronic) regime. Additionally, we investigate the coherence properties of the emitted light and study the impact of the relevant pump and phonon bath parameters.

physics.optics↗

arXiv2011

Reducing vortex losses in superconducting microwave resonators with microsphere patterned antidot arrays

We experimentally investigate the vortex induced energy losses in niobium coplanar waveguide resonators with and without quasihexagonal arrays of nanoholes (antidots), where large-area antidot patterns have been fabricated using self-assembling microsphere lithography. We perform transmission spectroscopy experiments around 6.25 and 12.5 GHz in magnetic field cooling and zero field cooling procedures with perpendicular magnetic fields up to B=27 mT at a temperature T=4.2 K. We find that the introduction of antidot arrays into resonators reduces vortex induced losses by more than one order of magnitude.

cond-mat.supr-con↗

arXiv2011

Efficient single-photon emission from electrically driven InP quantum dots epitaxially grown on Si(001)

The heteroepitaxy of III-V semiconductors on silicon is a promising approach for making silicon a photonic platform for on-chip optical interconnects and quantum optical applications. Monolithic integration of both material systems is a long-time challenge, since different material properties lead to high defect densities in the epitaxial layers. In recent years, nanostructures however have shown to be suitable for successfully realising light emitters on silicon, taking advantage of their geometry. Facet edges and sidewalls can minimise or eliminate the formation of dislocations, and due to the reduced contact area, nanostructures are little affected by dislocation networks. Here we demonstrate the potential of indium phosphide quantum dots as efficient light emitters on CMOS-compatible silicon substrates, with luminescence characteristics comparable to mature devices realised on III-V substrates. For the first time, electrically driven single-photon emission on silicon is presented, meeting the wavelength range of silicon avalanche photo diodes' highest detection efficiency.

cond-mat.mes-hall↗

arXiv2011

Dephasing of Mollow Triplet Sideband Emission of a Resonantly Driven Quantum Dot in a Microcavity

Detailed properties of resonance fluorescence from a single quantum dot in a micropillar cavity are investigated, with particular focus on emission coherence in dependence on optical driving field power and detuning. Power-dependent series over a wide range could trace characteristic Mollow triplet spectra with large Rabi splittings of $|Ω| \leq 15$ GHz. In particular, the effect of dephasing in terms of systematic spectral broadening $\propto Ω^2$ of the Mollow sidebands is observed as a strong fingerprint of excitation-induced dephasing. Our results are in excellent agreement with predictions of a recently presented model on phonon-dressed QD Mollow triplet emission in the cavity-QED regime.

cond-mat.mes-hall↗

arXiv2010

Effects of variable anisotropic-strain on the emission of neutral excitons confined in epitaxial quantum dots

We study the effect of elastic anisotropic biaxial strain on the light emitted by neutral excitons confined in different kinds of semiconductor quantum dots (QDs). We find that the light polarization rotates by up to 80 degree and the excitonic fine structure splitting varies by several tens of $μ$eVs as the strain is varied. By means of a continuum model we mainly ascribe the observed effects to substantial changes of the hole wave function. These results show that strain-fields of a few permill magnitude are suffcient to dramatically modify the electronic structure of QDs.

cond-mat.mes-hall↗

arXiv2010

Exciton Dynamics on Rubrene (001) Crystal Surfaces with Microstructure Confinement

The exciton dynamics on flat (001) rubrene crystal surfaces have been compared with those under confined pyramidal geometry by time-resolved photoluminescence with micrometer spatial resolution. The luminescence spectra can be interpreted in terms of generation of a free and a self-trapped exciton. Their ratio depends significantly on the structural size which we explain by the optical absorption profile of the pyramids in combination with the exciton diffusion constant. For the latter a lower limit of 0.2 cm2/s at 4 K has been estimated. Temperature-dependent decay times reveal activation barriers between free and self-trapped exciton of 3 meV and 14 meV.

cond-mat.mtrl-sci↗

arXiv2009

Influence of the charge carrier tunneling processes on the recombination dynamics in single lateral quantum dot molecules

We report on the charge carrier dynamics in single lateral quantum dot molecules and the effect of an applied electric field on the molecular states. Controllable electron tunneling manifests itself in a deviation from the typical excitonic decay behavior which is strongly influenced by the tuning electric field and inter-molecular Coulomb energies. A rate equation model is developed to gain more insight into the charge transfer and tunneling mechanisms. Non-resonant (phonon-mediated) electron tunneling which changes the molecular exciton character from direct to indirect, and vice versa, is found to be the dominant tunable decay mechanism of excitons besides radiative recombination.

cond-mat.mes-hall↗

arXiv2009

Non-resonant dot-cavity coupling and its applications in resonant quantum dot spectroscopy

We present experimental investigations on the non-resonant dot-cavity coupling of a single quantum dot inside a micro-pillar where the dot has been resonantly excited in the s-shell, thereby avoiding the generation of additional charges in the QD and its surrounding. As a direct proof of the pure single dot-cavity system, strong photon anti-bunching is consistently observed in the autocorrelation functions of the QD and the mode emission, as well as in the cross-correlation function between the dot and mode signals. Strong Stokes and anti-Stokes-like emission is observed for energetic QD-mode detunings of up to ~100 times the QD linewidth. Furthermore, we demonstrate that non-resonant dot-cavity coupling can be utilized to directly monitor and study relevant QD s-shell properties like fine-structure splittings, emission saturation and power broadening, as well as photon statistics with negligible background contributions. Our results open a new perspective on the understanding and implementation of dot-cavity systems for single-photon sources, single and multiple quantum dot lasers, semiconductor cavity quantum electrodynamics, and their implementation, e.g. in quantum information technology.

quant-ph↗

arXiv2008

Polarization fine-structure and enhanced single-photon emission of self-assembled lateral InGaAs quantum dot molecules embedded in a planar micro-cavity

Single lateral InGaAs quantum dot molecules have been embedded in a planar micro-cavity in order to increase the luminescence extraction efficiency. Using a combination of metal-organic vapor phase and molecular beam epitaxy samples could be produced that exhibit a 30 times enhanced single-photon emission rate. We also show that the single-photon emission is fully switchable between two different molecular excitonic recombination energies by applying a lateral electric field. Furthermore, the presence of a polarization fine-structure splitting of the molecular neutral excitonic states is reported which leads to two polarization-split classically correlated biexciton exciton cascades. The fine-structure splitting is found to be on the order of 10 micro-eV.

cond-mat.other↗

arXiv2006

Radiative emission dynamics of quantum dots in a single cavity micropillar

The light emission of self-assembled (In,Ga)As/GaAs quantum dots embedded in single GaAs-based micropillars has been studied by time-resolved photoluminescence spectroscopy. The altered spontaneous emission is found to be accompanied by a non-exponential decay of the photoluminescence where the decay rate strongly depends on the excitation intensity. A microscopic theory of the quantum dot photon emission is used to explain both, the non-exponential decay and its intensity dependence. Also the transition from spontaneous to stimulated emission is studied.

cond-mat.other↗

arXiv2004

Correlated Photon-Pair Emission from a Charged Single Quantum Dot

The optical creation and recombination of charged biexciton and trion complexes in an (In,Ga)As/GaAs quantum dot is investigated by micro-photoluminescence spectroscopy. Photon cross-correlation measurements demonstrate the temporally correlated decay of charged biexciton and trion states. Our calculations provide strong evidence for radiative decay from the excited trion state which allows for a deeper insight into the spin configurations and their dynamics in these systems.

cond-mat.other↗